Datasheet IN74HC258N, IN74HC258D Datasheet (INTEGRAL)

TECHNICAL DATA

326

Quad 2-Input Data Selectors/Multiplexer
with 3-State Outputs

High-Performance Silicon-Gate CMOS

The IN74HC258 is identical in pinout to the LS/ALS258. The
device inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LS/ALSTTL outputs.

This device selects a (4-bit) nibble from either the A or B inputs as
determined by the Select input. The nibble is presented at the outputs
in inverted form when the Output Enable pin is at a low level. A high
level on the Output Enable pin switches the outputs into the high­impedance state.

•

Outputs Directly Interface to CMOS, NMOS, and TTL

•

Operating Voltage Range: 2.0 to 6.0 V

•

Low Input Current: 1.0 µA

•

High Noise Immunity Characteristic of CMOS Devices

IN74HC258

ORDERING INFORMATION

IN74HC258N Plastic

IN74HC258D SOIC

TA = -55° to 125° C for all packages

FUNCTION TABLE

Inputs Outputs

Output
Enable

Select Y0-Y3

HXZ
LLA0-A3
LHB0-B3

X=don’t care
Z = high-impedance st ate
A0-A3,B0-B3=the levels of the respective
Nibble Inputs

LOGIC DIAGRAM

PIN 16 =V

CC

PIN 8 = GND

PIN ASSIGNMENT

IN74HC258

327

MAXIMUM RATINGS

*

Symbol Parameter Value Unit

V

CC

DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V

V

IN

DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V

V

OUT

DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V

I

IN

DC Input Current, per Pin

±

20

mA

I

OUT

DC Output Current, per Pin

±

35

mA

I

CC

DC Supply Current, VCC and GND Pins

±

75

mA

P

D

Power Dissipation in Still Air, Plastic DIP+
SOIC Package+

750
500

mW

Tstg Storage Temperature -65 to +150

°

C

T

L

Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)

260

°

C

*

Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C

SOIC Package: : - 7 mW/°C from 65° to 125°C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Min Max Unit

V

CC

DC Supply Voltage (Referenced to GND) 2.0 6.0 V

VIN, V

OUT

DC Input Voltage, Output Voltage (Referenced to GND) 0 V

CC

V

T

A

Operating Temperature, All Package Types -55 +125

°

C

tr, t

f

Input Rise and Fall Time (Figure 1) VCC =2.0 V

V

CC

=4.5 V

V

CC

=6.0 V

0
0
0

1000

500
400

ns

This device c ontains p rote ction ci rcuitr y to guard a gainst damage d ue to high st atic voltages or electr ic
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V

IN

and V

OUT

should be constrained to the range

GND≤(V

IN

or V

OUT

)≤VCC.

Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V

CC

).

Unused outputs must be left open.

IN74HC258

328

DC ELECTRICAL CHARACTERISTICS

(Voltages Referenced to GND)

V

CC

Guaranteed Limit

Symbol Parameter Test Conditions V

25 °C

to

-55°C

≤

85

°

C

≤

125

°

C

Unit

V

IH

Minimum High-Level
Input Voltage

V

OUT

=0.1 V or VCC-0.1 V



I

OUT

≤

20 µA

2.0

4.5

6.0

1.5

3.15

4.2

1.5

3.15

4.2

1.5

3.15

4.2

V

V

IL

Maximum Low ­Level Input Voltage

V

OUT

=0.1 V or VCC-0.1 V



I

OUT

 ≤

20 µA

2.0

4.5

6.0

0.3

0.9

1.2

0.3

0.9

1.2

0.3

0.9

1.2

V

V

OH

Minimum High-Level
Output Voltage

VIN=VIH or V

IL



I

OUT

 ≤

20 µA

2.0

4.5

6.0

1.9

4.4

5.9

1.9

4.4

5.9

1.9

4.4

5.9

V

VIN=VIH or V

IL



I

OUT

 ≤

6.0 mA



I

OUT

 ≤

7.8 mA

4.5

6.0

3.98

5.48

3.84

5.34

3.7

5.2

V

OL

Maximum Low- Level
Output Voltage

VIN=VIH or V

IL



I

OUT

 ≤

20 µA

2.0

4.5

6.0

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

V

VIN=VIH or V

IL



I

OUT

 ≤

6.0 mA



I

OUT

 ≤

.7.8 mA

4.5

6.0

0.26

0.26

0.33

0.33

0.4

0.4

I

IN

Maximum Input
Leakage Current

VIN=VCC or GND 6.0

±

0.1

±

1.0

±

1.0

µ

A

I

OZ

Maximum Three­State Leakage
Current

Output in High-Impedance
State
V

IN

= VIL or V

IH

V

OUT

= V

CC

or GND

6.0

±

0.5

±

5.0

±

10

µ

A

I

CC

Maximum Quiescent
Supply Current
(per Package)

VIN=VCC or GND
I

OUT

=0µA

6.0 8.0 80 160

µ

A

IN74HC258

329

AC ELECTRICAL CHARACTERISTICS

(CL=50pF,Input tr=tf=6.0 ns)

V

CC

Guaranteed Limit

Symbol Parameter V

25 °C

to

-55°C

≤85°C≤

125°C

Unit

t

PLH

, t

PHL

Maximum Propagation Delay, Nibble A or B to
Output Y (Figures 1and 4)

2.0

4.5

6.0

100

20
17

125

25
21

150

30
26

ns

t

PLH

, t

PHL

Maximum Propagation Delay , Select to
Output Y (Figures 2 and 4)

2.0

4.5

6.0

160

32
18

200

40
35

240

48
42

ns

t

PLZ

, t

PHZ

Maximum Propagation Delay , Output Enable to
Output Y (Figures 3 and 5)

2.0

4.5

6.0

150

30
26

190

38
33

225

45
38

ns

t

PZL

, t

PZH

Maximum Propagation Delay , Output Enable to
Output Y (Figures 3 and 5)

2.0

4.5

6.0

110

22
20

140

28
25

165

34
30

ns

t

TLH

, t

THL

Maximum Output Transition Time, Any Output
(Figures 1 and 4)

2.0

4.5

6.0

60
12
10

75
15
13

90
18
15

ns

C

IN

Maximum Input Capacitance - 10 10 10 pF

C

OUT

Maximum Three-State Output Capacitance
(Output in High-Impedance State)

-151515pF

Power Dissipation Capacitance (Per Package)

Typical @25°C,V

CC

=5.0 V

C

PD

Used to determine the no-load dynamic power
consumption:
P

D=CPDVCC

2

f+ICCV

CC

59 pF

Figure 1. Switching Waveforms Figure 2. Switching Waveforms

IN74HC258

330

Figure 3. Switching Waveforms

Figure 4. Test Circuit Figure 5. Test Circuit

EXPANDED LOGIC DIAGRAM