Page 1
Industrial Power Control
Diode
Silicon Carbide Schottky Diode
Final Datasheet
Rev. 2.1 2017-07-21
IDH05G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
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5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Type
VDC
IF
QC
T
j,max
Marking
Package
IDH05G120C5
1200V
5A
24nC
175°C
D0512C5
PG-TO220-2-1
CoolSiCTM SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size / cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks: www.infineon.com/sic
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
Pin 1 and backside – cathode
Pin 2 – anode
Key Performance and Package Parameters
1) J-STD20 and JESD22
Final Data Sheet 2 Rev. 2.1, 2017-07-21
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5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Table of Contents
Description .................................................................................................................................................. 2
Table of Contents ........................................................................................................................................ 3
Maximum Ratings ....................................................................................................................................... 4
Thermal Resistances .................................................................................................................................. 4
Electrical Characteristics ............................................................................................................................. 5
Electrical Characteristics Diagram .............................................................................................................. 6
Package Drawings ...................................................................................................................................... 9
Revision History ........................................................................................................................................ 10
Disclaimer ................................................................................................................................................. 11
Final Data Sheet 3 Rev. 2.1, 2017-07-21
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5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
1200
V
Continues forward current for R
th(j-c,max)
TC = 161°C, D=1
TC = 135°C, D=1
TC = 25°C, D=1
IF
5.0
9.2
19.1
A
Surge non-repetitive forward current,
sine halfwave
TC=25°C, tp=10ms
TC=150°C, tp=10ms
I
F,SM
59
50
A
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
I
F,max
472
A
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
∫ i²dt
17.4
12.5
A²s
Diode dv/dt ruggedness
VR=0…960V
dv/dt
80
V/ns
Power dissipation
TC = 25°C
P
tot
109
W
Operating temperature
Tj
-55…175
°C
Storage temperature
T
stg
-55…150
°C
Soldering temperature,
wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
T
sold
260
°C
Mounting torque
M3 and M4 screws
M
0.7
Nm
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Characteristic
Diode thermal resistance,
junction – case
R
th(j-c)
-
1.06
1.37
K/W
Thermal resistance,
junction – ambient
R
th(j-a)
leaded - -
62
K/W
Maximum ratings
Thermal Resistances
Final Data Sheet 4 Rev. 2.1, 2017-07-21
Page 5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Static Characteristic
DC blocking voltage
VDC
Tj = 25°C
1200 - -
V
Diode forward voltage
VF
IF= 5A, Tj=25°C
IF= 5A, Tj=150°C
- - 1.50
1.95
1.8
2.6
V
Reverse current
IR
VR=1200V, Tj=25°C
VR=1200V, Tj=150°C
2.5
12
33
175
µA
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Dynamic Characteristics
Total capacitive charge
QC
VR=800V, Tj=150°C
R
V
C
dVVCQ
0
)(
-
24
-
nC
Total Capacitance
C
VR=1 V, f=1 MHz
VR=400 V, f=1 MHz
VR=800 V, f=1 MHz
-
-
-
301
21
17
-
- - pF
Electrical Characteristics
Static Characteristics, at Tj=25°C, unless otherwise specified
Dynamic Characteristics, at Tj=25°C, unless otherwise specified
Final Data Sheet 5 Rev. 2.1, 2017-07-21
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5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Figure 1. Power dissipation as a function
of case temperature, P
tot
=f(TC),
R
th(j-c),max
Figure 2. Diode forward current as function
of temperature, Tj≤175°C,
R
th(j-c),max
, parameter D=duty cycle,
Vth, R
diff
@ Tj=175°C
Figure 3. Typical forward characteristics,
IF=f(VF), tp= 10 µs, parameter: Tj
Figure 4. Typical forward characteristics in surge
current, IF=f(VF), tp= 10 µs,
parameter: Tj
Electrical Characteristics Diagram
Final Data Sheet 6 Rev. 2.1, 2017-07-21
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5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Figure 5. Typical capacitive charge as function
of current slope1, QC=f(dIF/dt), Tj=150°C
1) Only capacitive charge, guaranteed by design.
Figure 6. Typical reverse current as function
of reverse voltage, IR=f(VR), parameter: Tj
Figure 7. Max. transient thermal impedance,
Z
th,jc
=f(tP), parameter: D=tP/T
Figure 8. Typical capacitance as function of
reverse voltage, C=f(VR); Tj=25°C; f=1 MHz
Final Data Sheet 7 Rev. 2.1, 2017-07-21
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5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Figure 9. Typical capacitively stored energy as
function of reverse voltage,
R
V
C
VdVVCE
0
)(
Final Data Sheet 8 Rev. 2.1, 2017-07-21
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5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Package Drawings
Final Data Sheet 9 Rev. 2.1, 2017-07-21
Page 10
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Revision: 2017-07-21, Rev. 2.1
Previous Revision:
Revision
Date
Subjects (major changes since last version)
2.0
2015-08-28
Final data sheet
2.1 - Editorial Changes
Revision History
Disclaimer
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Final Data Sheet 10 Rev. 2.1, 2017-07-21
Page 11
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2017.
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims
any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of
intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations
stated in this document and any applicable legal requirements, norms and standards concerning customer’s
products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the
Automotive Electronics Council.
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Due to technical requirements products may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications
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Final Data Sheet 11 Rev. 2.1, 2017-07-21
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