IDD04SG60C
3
rd
Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
thinQ! 3G Diode designed for fast switching applications like:
Maximum ratings
Parameter Symbol Conditions Unit
Continuous forward current
I
F
TC<130 °C
4 A
I
F,SM
TC=25 °C, tp=10 ms
18
TC=150 °C, tp=10 ms
13.5
Non-repetitive peak forward current
I
F,max
TC=25 °C, tp=10 µs
120
∫i2dt
TC=25 °C, tp=10 ms
1.8
A2s
TC=150 °C, tp=10 ms
0.93
Repetitive peak reverse voltage
V
RRM
Tj=25 °C
600 V
Diode dv/dt ruggedness
dv/dt
V
R
= 0….480 V
50 V/ns
Power dissipation
P
tot
TC=25 °C
43 W
Operating and storage temperature
Tj, T
stg
-55 ... 175 °C
Soldering temperature, reflow
soldering (max)
T
sold
reflow MSL1 260
• Breakdown voltage tested at 20mA
2)
• Optimized for high temperature operation
• Lowest Figure of Merit Q
C/IF
i²t value
Value
Surge non-repetitive forward current,
sine halfwave
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
V
DC
600
V
Q
C
4.5
nC
IF; TC< 130 °C
4
A
Product Summary
Type
Package
Marking
Pin 1
Pin 2
Pin 3
IDD04SG60C
PG-TO252-3
D04G60C
n.c.
A
C
Rev. 2.4 page 1 2013-02-11
IDD04SG60C
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 3.5 K/W
R
thJA
SMD version, device
on PCB, minimal
footprint
- - 75
SMD version, device
on PCB, 6 cm2 cooling
area
5)
- 50 -
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
IR=0.05 mA, Tj=25 °C
600 - - V
Diode forward voltage
V
F
IF=4 A, Tj=25 °C
- 2.1 2.3
IF=4 A, Tj=150 °C
- 2.8 -
Reverse current
I
R
VR=600 V, Tj=25 °C
- 0.3 25 µA
VR=600 V, Tj=150 °C
- 1.3 270
AC characteristics
Total capacitive charge
Q
c
- 4.5 - nC
Switching time
3)
t
c
- - <10 ns
Total capacitance
C
VR=1 V, f=1 MHz
- 80 - pF
VR=300 V, f=1 MHz
- 10 -
VR=600 V, f=1 MHz
- 10 -
1)
J-STD20 and JESD22
Values
VR=400 V,IF≤I
F,max
,
diF/dt=200 A/µs,
Tj=150 °C
Thermal resistance, junction ambient
6)
Only capacitive charge occuring, guaranteed by design.
4)
Under worst case Zth conditions.
5)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air
2)
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from Tj, I
LOAD
and
di/dt), different from trr which is dependent on Tj, I
LOAD
and di/dt. No reverse recovery time constant trr due
to absence of minority carrier injection.
Rev. 2.4 page 2 2013-02-11
IDD04SG60C
1 Power dissipation 2 Diode forward current
P
tot
=f(TC); parameter: R
thJC(max)
IF=f(TC)4); Tj≤175 °C; parameter: D = tp/T
3 Typ. forward characteristic 4 Typ. forward characteristic in surge current
mode
IF=f(VF); tp=400 µs; parameter:T
j
IF=f(VF); tp=400 µs; parameter: T
j
0
5
10
15
20
25
30
35
40
45
25 50 75 100 125 150 175
P
tot
[W]
TC [°C]
-55ºC
25ºC
100ºC
150ºC
175ºC
0
1
2
3
4
5
0 1 2 3 4 5
I
F
[A]
VF[V]
-55ºC
25ºC
100ºC
150ºC
175ºC
0
3
6
9
12
15
0 2 4 6 8
I
F
[A]
VF[V]
1
0.7
0.5
0.3
0.1
0
5
10
15
20
25
30
25 75 125 175
I
F
[A]
TC [°C]
Rev. 2.4 page 3 2013-02-11
IDD04SG60C
5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage
QC=f(diF/dt)6); IF≤I
F,max
IR=f(VR); parameter: T
j
7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage
Z
thJC
=f(tp); parameter: D = tP/T C=f(VR); TC=25 °C, f=1 MHz
100 101 102 103
0
10
20
30
40
50
60
70
80
C [pF]
VR [V]
25 °C
100 °C
150 °C
175 °C
-55 °C
10-4
10-3
10-2
10-1
100
101
100 200 300 400 500 600
I
R
[µA]
VR [V]
0
1
2
3
4
5
100 400 700 1000
Q
c
[nC]
diF/dt [A/µs]
10-6 10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
Z
thJC
[K/W]
tp [s]
0
0.02
0.05
0.1
0.2
0.5
Rev. 2.4 page 4 2013-02-11
IDD04SG60C
9 Typ. C stored energy
EC=f(VR)
0.0
0.5
1.0
1.5
2.0
2.5
0 200 400 600
E
c
[µJ]
VR [V]
Rev. 2.4 page 5 2013-02-11
IDD04SG60C
PG-TO252-3: Outline
Dimensions in mm/inches
Dimensions in mm/inches
Rev. 2.4 page 6 2013-02-11
IDD04SG60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
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and/or automotive, aviation and aerospace applications or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support , automotive, aviation and
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Life support systems are intended to be implanted in the human body and/or maintain
and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
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Rev. 2.4 page 7 2013-02-11
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