Page 1
IDB30E60
j
j
j
g
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
600
V
Continuous forward current
TC = 25C
TC = 90C
IF
52.3
34.9
A
Surge non repetitive forward current
TC = 25C, tp = 10 ms, sine halfwave
I
FSM
117
A
Maximum repetitive forward current
TC = 25C, tp limited by t
j,max
, D = 0.5
I
FRM
81
A
Power dissipation
TC = 25C
TC = 90C
P
tot
142.9
80.9
W
Operating junction temperature
Tj
-40…+175
°C
Storage temperature
T
stg
-55...+150
Soldering temperature
1.6mm (0.063 in.) from case for 10 s
TS
260
1
3
2
* RoHS compliant
Fast Switching Emitter Controlled Diode
600V Emitter Controlled technology
2013-12-05
PG-TO263-3
Fast Switching EmCon Diode
Feature
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
Type
IDB30E60 PG-TO263-3 -
Package Ordering Code
Product Summary
V
I
F
V
T
Marking
D30E60
RRM
600 V
30 A
F
max
1.5 V
175 °C
Pin 1 PIN 2 PIN 3
NC C A
Maximum Ratings, at T
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Repetitive peak reverse voltage V
Continous forward current
TC=25°C
TC=90°C
Surge non repetitive forward current
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
TC=25°C, tp limited by T
jmax
, D=0.5
Power dissipation
TC=25°C
TC=90°C
Operating and storage temperature T
Soldering temperature
reflow soldering, MSL1
Page 1
RRM
I
F
I
FSM
I
FRM
P
tot
T
S
, T
600 V
A
52.3
34.9
117
81
W
142.9
80.9
st
-55...+175 °C
260 °C
2009-03-04Rev.2.4
Page 2
IDB30E60
2013-12-05
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
Thermal resistance, junction - ambient, leaded R
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJC
thJA
thJA
- - 1.05 K/W
- - 62
-
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Reverse leakage current
VR=600V, Tj=25°C
V
=600V, Tj=150°C
R
Forward voltage drop
IF=30A, Tj=25°C
I
V
R
-
-
F
-
-
35
-
-
1.5
62
-
µA
50
2500
V
2
I
=30A, Tj=150°C
F
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
-
1.5
-
2009-03-04Rev.2.4
Page 3
IDB30E60
2013-12-05
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Reverse recovery time
VR=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C
V
=400V, IF=30A, diF/dt=1000A/µs, Tj=125°C
R
V
=400V, IF=30A, diF/dt=1000A/µs, Tj=150°C
R
Peak reverse current
VR=400V, IF = 30A, diF/dt=1000A/µs, Tj=25°C
V
=400V, IF =30A, diF/dt=1000A/µs, Tj=125°C
R
V
=400V, IF =30A, diF/dt=1000A/µs, Tj=150°C
R
Reverse recovery charge
VR=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C
V
=400V, IF =30A, diF/dt=1000A/µs, Tj=125°C
R
V
=400V, IF =30A, diF/dt=1000A/µs, Tj=150°C
R
Reverse recovery softness factor
VR=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C
V
=400V, IF=30A, diF/dt=1000A/µs, Tj=125°C
R
V
=400V, IF=30A, diF/dt=1000A/µs, Tj=150°C
R
t
I
Q
S
rr
rrm
rr
ns
-
-
-
126
171
178
-
-
A
-
-
-
19
22
24
-
-
nC
-
1100
-
1950
-
2150
-
-
-
4
4.6
4.8
-
-
-
-
-
-
Page 3
2009-03-04Rev.2.4
Page 4
IDB30E60
j
2013-12-05
1 Power dissipation
P
= f (TC)
tot
parameter: T
150
W
120
110
100
tot
P
90
80
70
60
50
40
30
20
10
0
25 50 75 100 125
≤ 175 °C
°C
2 Diode forward current
IF = f(TC)
parameter: T
55
A
45
40
35
F
I
30
25
20
15
10
5
0
175
T
C
25 50 75 100 125
≤ 175°C
j
°C
175
T
C
3 Typ. diode forward current
= f (VF)
I
F
90
A
70
60
F
I
50
40
30
20
10
0
0 0.5 1 1.5
-55°C
25°C
100°C
150°C
V
4 Typ. diode forward voltage
= f (Tj)
V
F
2
V
1.8
1.7
F
V
1.6
1.5
1.4
1.3
1.2
1.1
2.5
V
F
1
-60 -20 20 60 100
60A
30A
15A
°C
160
T
j
Page 4
2009-03-04Rev.2.4
Page 5
IDB30E60
2013-12-05
5 Typ. reverse recovery time
t
= f (diF/dt)
rr
parameter: V
500
ns
400
rr
350
t
300
250
200
150
100
200 300 400 500 600 700 800
= 400V, Tj = 125°C
R
60A
30A
15A
A/µs
diF/dt
1000
6 Typ. reverse recovery charge
Q
=f(diF/dt)
rr
parameter: V
2600
nC
2200
rr
2000
Q
1800
1600
1400
1200
1000
200 300 400 500 600 700 800
= 400V, Tj = 125 °C
R
60A
30A
15A
A/µs
diF/dt
1000
7 Typ. reverse recovery current
I
= f (diF/dt)
rr
parameter: V
26
A
22
20
rr
I
18
16
14
12
10
8
6
200 300 400 500 600 700 800
= 400V, Tj = 125°C
R
60A
30A
15A
A/µs
diF/dt
1000
8 Typ. reverse recovery softness factor
S = f(di
parameter: V
S
/dt)
F
= 400V, Tj = 125°C
R
12
10
9
8
7
6
5
4
3
200 300 400 500 600 700 800
60A
30A
15A
A/µs
diF/dt
1000
Page 5
2009-03-04Rev.2.4
Page 6
9 Max. transient thermal impedance
2013-12-05
Z
= f (tp)
thJC
parameter : D = t
1
IDP30E60
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
single pulse
/T
p
D = 0.50
0.20
0.10
0.05
0.02
0.01
IDB30E60
-4
10
10-710-610-510-410-310
-2
0
s
10
t
p
Page 6
2009-03-04Rev.2.4
Page 7
IDB30E60
2013-12-05
Page 7
2007-09-01Rev.2.4
Page 8
Published by
2013-12-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (
www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types
in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Infineon Technologies AG,
81726 München
© 2009 Infineon Technologies AG
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
IDB30E60
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2009-03-04Rev.2.4
Loading...