The Supertex HV9105 and HV9108 are high-efficiency high
voltage SMPS ICs intended for use in power converters requiring
extreme efficiency at output power levels of 5.0W or less. The low
supply current (0.5mA max) allows them to be used to build
supplies which meet CCITT I.430 performance recommendations (60% efficiency at .025W out).
The HV9105/08 provides all the functions necessary to build a
single-switch current-mode converter of any common topology,
with a minimum of external parts.
In addition to high efficiency, because it uses Supertex’s proprietary high voltage BiCMOS/DMOS technology, the HV9105/08
offers numerous performance advantages when compared to
conventional PWM ICs. Dynamic range is approximately 8 times
wider than with bipolar ICs, both response speed and maximum
clock rate are faster, and no external power resistors or zeners are
necessary for high voltage starting.
Accessory circuits are included to provide either latching or
nonlatching shutdown. When shut down, device dissipation is
less than 4mW.
The HV9105/08 is intended for operation with input voltages from
10 to 120VDC.
Package OutlinesMOSFET Switch+V
Absolute Maximum Ratings
+VIN, Input Voltage120V
V
DS
VDD, Logic Voltage15.0V
Control Inputs-0.3V to VDD+0.3V
ID (Peak)2.5A
Storage Temperature-65°C to 150°C
Power Dissipation, Plastic DIP750mW
Power Dissipation, PLCC1400mW
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
200V
For detailed circuit and application information, please refer
to application notes AN-H13 and AN-H21 to AN-H24.
1
Page 2
Electrical Characteristics
(V
= 10V, +V
DD
Symbol ParametersMinTypMaxUnitConditions
Reference
= 48V, Discharge = -V
IN
= 0V, R
IN
= 820KΩ, R
BIAS
= 910KΩ,TA = 25°C, unless otherwise specified)
OSC
HV9105/HV9108
V
REF
Z
OUT
I
SHORT
∆V
Output Voltage3.924.004.08VRL = 10MΩ
Output Impedance
Short Circuit Current100130µAV
Change in V
REF
Oscillator
f
MAX
f
OSC
Maximum Oscillator Frequency1.0 3.0MHzR
Initial Accuracy
Voltage Stability
Temperature Coefficient
PWM
D
MAX
D
MIN
Maximum Duty Cycle
Deadtime
Minimum Duty Cycle0%
Minimum Pulse Width110175nsec
Before Pulse Drops Out
Error Amplifier
V
FB
Feedback Voltage3.964.004.04VVFB Shorted to Comp
1
with Temperature 0.25mV/°C
REF
2
1
1
1
HV910549.049.449.6%
15 3045KΩ
324048KHz
15%9.5V < V
170ppm/°C
HV910899.099.499.6
1
HV9108100nsec
1
REF
OSC
= -V
= 0Ω
IN
< 13.5V
DD
I
IN
V
OS
A
VOL
gbwUnity Gain Bandwidth
Z
OUT
I
SOURCE
I
SINK
PSRRPower Supply Rejection
Input Bias Current25500nAV
Input Offset Voltagenulled at trimmV
Open Loop Voltage Gain
Output Impedance
1
1
1
Output Source Current-1.3-1.0mAV
Output Sink Current5080µAV
1
Current Limit
V
SOURCE
t
d
Threshold Voltage1.01.21.4VV
Delay to Output
1
Pre-Regulator/Startup
+V
V
TH
V
LOCK
Notes:
1. Guaranteed by design. Not subject to production test.
2. Stray capacitance on OSC IN pin ≤5pF.
Allowable Input Voltage120VI
IN
Input Leakage Current10µAV
VDD Pre-regulator Turn-off7.88.69.4VI
Threshold Voltage
Undervoltage Lockout7.08.18.9VRL = 100Ω from Drain to V
60 80dB
0.5 0.8MHz
See Fig. 2Ω
See Fig. 1
150200nsV
= 4.0V
FB
= 3.4V
FB
= 4.5V
FB
= 0V, RL = 100Ω
FB
= 1.5V, RL = 100Ω
SOURCE
= 10µA
IN
> 9.4V
DD
= 10µA
PREREG
DD
2
Page 3
Electrical Characteristics (Continued)
(V
= 10V, +V
DD
Symbol ParametersMinTypMaxUnitConditions
Supply
= 48V, Discharge = -V
IN
= 0V, R
IN
= 820KΩ, R
BIAS
= 910KΩ,TA = 25°C, unless otherwise specified)
OSC
HV9105/HV9108
I
DD
I
BIAS
V
DD
Supply Current0.6mA
Bias Current7.5µA
Operating Range9.013.5V
Logic
t
SD
t
SW
t
RW
t
LW
V
IL
V
IH
I
IH
I
IL
Shutdown Delay Time
Shutdown Pulse Width
RESET Pulse Width
Latching Pulse Width
Input Low Voltage2.0V
Input High Voltage7.0V
Input High Current1.05.0µAVIN = 10V
Input Low Current-25-35µAVIN = 0V
1
1
1
1
MOSFET Switch
BV
R
DS(ON)
I
DSS
C
DS
Note:
1. Guaranteed by design. Not subject to production test.
Breakdown Voltage200240VV
DSS
Drain-to-Source On-resistance3.55.0ΩV
OFF State Drain Leakage Current10µAV
Drain Capacitance35pFV
0.35mAShutdown = -V
50100nsV
50ns
50ns
25ns
IN
= -V
SOURCE
SOURCE
I
= 100µA
D
SOURCE
SOURCE
V
DRAIN
= 25V, Shutdown = 0V
DS
IN
= Shutdown = 0V,
= 0V, ID = 100mA
= Shutdown = 0V,
= 100V
Truth Table
ShutdownResetOutput
HHNormal Operation
HH → LNormal Operation, No Change
LHOff, Not Latched
LLOff, Latched
L → HLOff, Latched, No Change
3
Page 4
Switching Waveforms
1.5V
Source
Drain
Shutdown
Reset
V
DD
50%
0
t
d
0
V
DD
50%
0
V
DD
0
t
≤ 10ns
R
50%
HV9105/HV9108
t
V
DD
SHUTDOWN
50%
0
t
SD
V
DD
Drain
0
t
SW
90%90%
50%
t
LW
50%
t
RW
50%
≤ 10ns
F
, tF ≤ 10ns
t
R
Functional Block Diagram
COMPDischarge
Error
Amplifier
–
+
4V
To
Internal
Circuits
–
+
8.6V
BIAS
+V
FB
14
(20)
V
10 (14)
REF
REF
GEN
1 (2)
Current
Sources
6 (9)
V
DD
2 (3)
IN
Pre-regulator/Startup
13
(18)9(12)
2V
1.2V
8.1V
–
+
+
–
–
+
OSC
8
(11)
Current-mode
Comparator
C/L
Comparator
Undervoltage
Comparator
In
OSC
OSC
Out
(10)
R
S
7
TQ
9108
Q
V
DD
9105
(5) 3
Drain
(8) 5
-V
IN
V
DD
S
Q
R
(7) 4
(16) 11
(17) 12
Source
Shutdown
Reset
Pin numbers in parentheses are for PLCC package.
4
Page 5
+
–
Reference
V
1
V
2
0.1V swept 10Hz – 1MHz
0.1µF
10.0V
4.00V
100K1%
100K1%
PSRR
Typical Performance Curves
HV9105/HV9108
Fig. 1
Fig. 2
PSRR – Error Amplifier and Reference
0
-10
-20
-30
-40
(dB)(Ω)
-50
-60
-70
-80
100KHz1KHz10Hz100Hz10KHz1MHz
Fig. 3
80
70
60
50
40
30
Gain (dB)
20
10
0
-10
100Hz1KHz10KHz
Error Amplifier
Open Loop Gain/Phase
100KHz1MHz
240°
180°
120°
60°
-60°
-120°
-180°
0°
Phase
Frequency
Error Amplifier Output Impedance (Z0)
6
10
5
10
4
10
3
10
Fig. 4
1M
Output Switching Frequency
vs. Oscillator Resistance
HV9105
HV9108
Test Circuits
+10V
(V
)
DD
(FB)
GND
(–V
)
IN
2
10
10
1.0
0.1
.01
100Hz1KHz10KHz
Error Amp Z
Reference
0.1µF
100k
OUT
f (Hz)
100KHz
OUT
1MHz
10MHz
10k
10k
100 k
R
OSC
1M
(Ω)
1.0V swept 100Hz – 2.2MHz
60.4K
–
+
Tektronix
P6021
(1 turn
V
1
secondary)
V
2
40.2K
NOTE: Set Feedback Voltage so that
V
COMP
= V
± 1mV before connecting transformer
DIVIDE
5
Page 6
Technical Description
HV9105/HV9108
Preregulator
The preregulator/startup circuit for the HV9105/08 consists of a
high-voltage N-channel depletion-mode DMOS transistor driven
by an error amplifier to form a controlled current path between the
terminal and the VDD terminal of the HV9105/08. Maximum
V
IN
current (about 20 mA) occurs when V
rises. This path shuts off altogether when VDD rises to
as V
DD
somewhere between 7.8 and 9.4V, so that if V
= 0, with current reducing
DD
is held at 10 or
DD
12V by an external source (generally the supply the chip is
controlling) no current other than leakage is drawn through the
high voltage transistor. This minimizes dissipation.
An external capacitor between VDD and VSS is generally required
to store energy used by the chip during the time between shutoff
of the high voltage path and the V
supply’s output rising enough
DD
to take over the powering of the chip. This capacitor generally also
serves as the output filter capacitor for that output from the supply.
1.0µF is generally sufficient to assure against double-starting.
Capacitors as small as 0.1µF can work when faster response from
the V
line is required. The chosen capacitor should have very
DD
good high frequency characteristics and be mounted so that the
sum of the lead length between capacitor and IC for both leads is
less than 2.5 cm. Stacked polyester or ceramic capacitors work
well. Electrolytic capacitors are generally not suitable.
A common resistor divider string is used to monitor V
for both
DD
the undervoltage lockout circuit and the shutoff circuit of the high
voltage FET. Setting the undervoltage sense point about 0.6V
lower on the string than the FET shutoff point guarantees that the
undervoltage lockout always releases before the FET shuts off.
Bias Circuit
An external bias resistor, connected between the bias pin and V
is required by the HV9105/08 to set currents in a series of current
mirrors used by the analog sections of the chip. Nominal external
bias current requirement is 7.5µA, which can be set by a 820KΩ
to 1.3MΩ resistor if a 10V V
resistor if a 12V V
is used. A precision resistor is NOT required;
DD
is used, or a 1.2MΩ to 2.0MΩ
DD
± 5% is fine.
For extremely low power operation, the value of bias current can
be reduced to as low as 4.0µA by further increases in the value of
the bias resistor.
SS
Clock Oscillator
The clock oscillator of the HV9105/08 consists of a ring of CMOS
inverters, timing capacitors, a capacitor discharge FET, and, in
the 50% maximum duty cycle version, a frequency dividing flipflop. A single external resistor between the OSC In and OSC Out
pins is required to set oscillator frequency (see Fig. 4). For the
50% maximum duty cycle versions the ‘Discharge’ pin is internally
connected to GND. For the 99% duty cycle version, ‘Discharge’
can either be connected to V
through a resistor used to set a deadtime.
One difference exists between the Supertex HV9105/08 and
competitive 9105 parts. The oscillator of the Supertex HV9105/08
is shut off when a shutoff command is received. This saves about
100µA of quiescent current, which aids in the construction of
power supplies to meet CCITT specification I.430, and in other
situations where an absolute minimum of quiescent power dissipation is required.
directly or connected to V
SS
SS
Reference
The reference section of the HV9105/08 consists of a stable
bandgap reference followed by a buffer amplifier which scales the
voltage up to approximately 4.0V. The scaling resistors of the
reference buffer amplifier are trimmed during manufacture so that
the output of the error amplifier when connected in a gain of -1
configuration is as close to 4.000V as possible. This nulls out any
input offset of the error amplifier. As a consequence, even though
the observed reference voltage of a specific part may not be
exactly 4.0V, the feedback voltage required for proper regulation
will be 4.0V.
A resistor of approximately 50KΩ is placed internally between the
output of the reference buffer amplifier and the circuitry it feeds
(reference output pin and non-inverting input to the error amplifier). This allows overriding the internal reference with a lowimpedance voltage source ≤6.0V. In general, because the reference voltage of the Supertex HV9105/08 is not noisy, as some
previous devices have been, overriding the reference should
seldom be necessary.
Because the reference is a high impedance node, and usually
there will be significant electrical noise near it, a bypass capacitor
between the reference pin and V
is strongly recommended. The
SS
reference buffer amplifier is intentionally compensated to be
stable with a capacitive load of 0.01 to 0.1µF.
Error Amplifier
The error amplifier is a true low-power differential input operational amplifier intended for around-the-amplifier compensation.
It is of mixed CMOS-bipolar construction: a PMOS input stage is
used so the common-mode range includes ground and the input
impedance is very high. This is followed by bipolar gain stages
which provide high gain without the electrical noise of all-MOS
amplifiers. The amplifier is unity-gain stable.
Current Sense Comparators
The HV9105/08 uses a true dual comparator system with independent comparators for modulation and current limiting. This
allows the designer greater latitude in compensation design, as
there are no clamps (except ESD protection) on the compensation pin. Like the error amplifier, the comparators are of low-noise
BiCMOS construction.
Remote Shutdown
The shutdown and reset pins can be used to perform either
latching or non-latching shutdown of a converter as required.
These pins have internal current source pull-ups so they can be
driven from open-drain logic. When not used, they should be left
open, or connected to V
DD
.
Main Switch
The main switch is a normal N-channel power MOSFET. Unlike
the situation with competitive devices, the body diode can be used
if desired without destroying the chip.