Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 1/3
HSB857 / 2SB857
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current.............................................................................................................. -4 A
IC Collector Current (IC Peak).............................................................................................. -8 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -70 - - V IC=-10uA, IE=0
BVCEO -50 - - V IC=-50mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -1 uA VCB=-50V, IC=0
*VCE(sat) - - -1 V IC=-2A, IB=-0.2A
*VBE(on) - - -1 V IC=-1A, VCE=-4V
*hFE1 35 - - IC=-0.1A, VCE=-4V
*hFE2 60 - 320 IC=-1A, VCE=-4V
fT - 15 - MHz VCE=-4V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank B C D
hFE 60-120 100-200 160-320
HSB857 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 2/3
1000
Current Gain & Collector Current
hFE @ VCE=4V
100
hFE
10
1
1 10 100 1000 10000
Collect or Cur rent (mA)
On Vo ltage & C ollector Current
10000
10000
1000
BE(sat)
V
100
Saturation Voltage (mV)
10
1 10 100 1000 10000
Collect or Cur rent (mA)
@ IC=10I
V
B
BE(sat)
@ IC=10I
Switching Ti me & Collector Current
Saturatio n Voltage & Collector Current
10.00
VCC=30V, IC=10IB1= -10I
1.00
B2
Tstg
B
1000
On Voltage (mV)
100
1 10 100 1000 10000
Collect or Cur rent (mA)
BE(on)
V
@ VCE=4V
Capacitance & Reverse- B iased Voltage
1000
100
Capac itanc e (pF)
Cob
0.10
Switchin g Times (us)
0.01
0.1 1.0 10.0
Collect or Cur rent (A)
Tf
Ton
Safe Op erating Ar ea
100000
10000
(mA)
C
1000
100
Collect or Cur rent-I
PT=1ms
PT=100ms
PT=1s
10
10
0.1 1 10 100
Rever se- Biased Voltage (V)
1
1 10 100
Forward Voltage-VCE (V)
HSB857 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A B
D
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 3/3
Marking :
E
C
HSMC Logo
Part Number
Date Code
Product Series
Rank
H
Style : Pin 1.Base 2.Collector 3.Emitter
G
I
3
M
2
K
N
1
4
O
DIM
*:Typical
Min. Max. Min. Max.
DIM
P
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 - *16.25
Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
HSB857 HSMC Product Specification
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