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HSB83YP
Silicon Epitaxial Planar Diode for High Voltage Switching
Features
• High reverse voltage. (VR=250V)
• CMPAK- 4 package which has two devices parallel connection,
is suitable for high density surface mounting.
Ordering Information
Type No. Laser Mark Package Code
HSB83YP F7 CMPAK-4
ADE-208-843(Z)
Rev 0
Mar 2000
Outline
4
1
(Top View)
3
2
1 Anode
2 Anode
3 Cathode
4 Cathode
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HSB83YP
Absolute Maximum Ratings (Ta = 25°C) *
2
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak
RM
R
FM
*1
I
FSM
300 V
250 V
300 mA
2A
forward surge current
Average rectified current I
O
100 mA
Junction temperature Tj 125 °C
Storage temperature Tstg -55Å`+125 °C
Note 1. Value at duration of 10msec.
Note 2. Two device total.
Electrical Characteristics (Ta = 25°C) *
1
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R1
I
R2
−−1.2 V IF = 100 mA
−−0.2 µAVR = 250V
−−100 VR = 300V
Capacitance C −−3.0 pF VR = 0V, f = 1 MHz
Reverse recovery
t
rr
−−100 ns IF = IR =30 mA, Irr = 3mA, RL= 100Ω
time
Note 1. Per one device.
2
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Main Characteristic
HSB83YP
-2
10
-3
10
-4
10
(A)
F
-5
10
-6
10
-7
Forward current I
10
-8
10
-9
10
0 0.2 0.4
Forward voltage V
0.6 0.8
F
Fig.1 Forward current Vs. Forward voltage
f=1MHz
(V)
1.0
-5
10
-6
10
(A)
R
-7
10
Reverse current I
-8
10
-9
10
0 50 200
100
150
Reverse voltage V R (V)
Fig.2 Reverse current Vs. Reverse voltage
250
10
1.0
Capacitance C (pF)
-1
10
10
-1
1.0
Reverse voltage V R (V)
Fig.3 Capacitance Vs. Reverse voltage
10
3
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HSB83YP
Package Dimensions
0.3 – 0.05
2.0 – 0.2
1.3 – 0.2
0.65
0.65
0.3 – 0.05
0.4250.425 1.25 – 0.1
2.1 – 0.2
+ 0.1
0.16
— 0.06
0 — 0.1
Unit: mm
0.3 – 0.05
0.65 0.65
1.3 – 0.2
0.3 – 0.05
0.2
0.9 – 0.1
Hitachi Code
JEDEC
EIAJ
Mass
CMPAK-4
Conforms
0.006 g
4
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HSB83YP
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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5
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HSB83YP
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