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HI-SINCERITY
MICROELECTRONICS CORP.
HSB772S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772S is designed for using in output stage of 0.75W
amplifier, voltage regulator, DC-DC converter and driver.
Spec. No. : HE6549
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e.......................................................................................... -55 to +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 750 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage........................................................................................ -40 V
VCEO Collector to Emitter Voltage..................................................................................... -30 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ............................................................................................................. -3 A
TO-92
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -40 - - V IC=-100uA, IE=0
BVCEO -30 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -1 uA VCB=-30V, IE=0
IEBO - - -1 uA VEB=-3V, IC=0
*VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A
*VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A
*hFE1 30 - - VCE=-2V, IC=-20mA
*hFE2 100 160 400 VCE=-2V, IC=-1A
fT - 80 - MHz VCE=-5V, IC=-0.1A, f=100MHz
Cob - 55 - pF VCB=-10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank Q P E
Range 100-200 160-320 200-400
HSB772S HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6549
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 2/4
1000
75oC125oC
25oC
100
hFE
hFE @ VCE=2V
10
1 10 100 1000 10000
Collector Cu rren t -IC (mA)
Sat urati on Volta ge & C ollector Current
10000
Current Gain & Collector Current
1000
100
CE(sat)
V
@ IC=10I
125oC
B
75oC
25oC
10000
1000
100
Saturation Voltage (mV)
10000
1000
100
10
Sat urati on Voltage & Col lector Current
CE(sat)
V
125oC
1
1 10 100 1000 10000
B
@ IC=5I
25oC
Collector Current - IC (mA)
75oC
Sat ur ation Voltage & Collector Cur rent
CE(sat)
V
@ IC=20I
125oC
B
75oC
25oC
Saturation Voltage (mV)
10
1
1 10 100 1000 10000
Collector Current - IC (mA)
Sat urati on Voltage & Collector Current
10000
CE(sat)
V
1000
100
Satur ation Volta g e ( m V)
10
1
1 10 100 1000 10000
B
@ IC=40I
125oC
25oC
Collector Current - IC (mA)
75oC
Saturat ion Volta ge ( m V)
10
1
1 10 100 1000 10000
Collector Current -IC (mA)
Sat ur ation Voltage & Collector Cur rent
10000
BE(sat)
V
1000
Saturat ion Volta ge ( m V)
100
1 10 100 1000 10000
25oC
125oC
B
@ IC=10I
75oC
Collector Current - IC (mA)
HSB772S HSMC Product Specification
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HI-SINCERITY
)
MICROELECTRONICS CORP.
Spec. No. : HE6549
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 3/4
1000
100
10
Cutoff Fr eque ncy ( M Hz)...
1
100
10
Cutoff Frequency & C ollector Curr ent
VCE=5V
1 10 100 1000
Collector Cu rren t (mA)
Safe Operation Area
PT=1ms
PT=100ms
1000
100
Cob
Capacitance ( pF)
10
1
0.1 1 10 100
Reverse- Biased Vol tage (V)
Power Derating
800
700
600
500
Capacit ance & Reverse- Bia sed Voltage
PT=1s
1
Collect or Cu r rent ( A
0.1
0.01
1 10 100
Forwar d Biased Voltage ( V)
400
300
200
Power Dis s ip ation - P D ( mW)
100
0
0 50 100 150 200
Ambient Temperatur e - Ta (oC)
HSB772S HSMC Product Specification
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HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6549
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 4/4
A
α2
B
31
2
Marking:
HB
S
772
S
Date Code Control Code
Rank
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Collector 3.Base
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
*: Typical
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness in cludes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
α1
α2
α3
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB772S HSMC Product Specification
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