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HI-SINCERITY
MICROELECTRONICS CORP.
HSB772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772 is designed for using in output stage of 1w audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.4 W
Total Power Dissipation (Tc=25°C)..................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC)..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................ -7 A
IB Base Current (DC) ....................................................................................................... -0.6 A
TO-126ML
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -40 - - V IC=-100uA
BVCEO -30 - - V IC=-1mA
BVEBO -5 - - V IE=-10uA
ICBO - - -1 uA VCB=-30V
IEBO - - -1 uA VEB=-3V
*VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A
*VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A
*hFE1 30 - - IC=-20mA, VCE=-2V
*hFE2 100 200 400 IC=-1A, VCE=-2V
fT - 80 - MHz IC=-0.1A, VCE=-5V
Cob - 55 - pF VCB=-10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank Q P E
Range 100-200 160-320 200-400
HSB772 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 2/4
1000
75oC125oC
25oC
100
hFE
hFE @ VCE=2V
10
1 10 100 1000 10000
Collector Current-IC (mA)
Sat urati on Voltage & C ol lector C urrent
10000
Current Gain & Collector Current
1000
100
CE(sat)
V
@ IC=10I
125oC
B
75oC
25oC
10000
1000
100
Saturation Voltage (mV)
10000
1000
100
10
Sat urati on Voltage & Col lector Current
CE(sat)
V
125oC
1
1 10 100 1000 10000
B
@ IC=5I
25oC
Collector Current - IC (mA)
75oC
Sat uration Voltage & Collect or Current
CE(sat)
V
@ IC=20I
125oC
B
75oC
25oC
Saturation Voltage (mV)
10
1
1 10 100 1000 10000
Collector Current - IC (mA)
Sat urati on Voltage & Collector Current
10000
CE(sat)
V
1000
100
Satur ation Voltag e (mV)
10
1
1 10 100 1000 10000
B
@ IC=40I
125oC
25oC
Collector Current - IC (mA)
75oC
Saturat ion Volta ge ( m V)
10
1
1 10 100 1000 10000
Collector Current - IC (mA)
Sat uration Voltage & Collect or Current
10000
BE(sat)
V
1000
Saturat ion Volta ge ( m V)
100
1 10 100 1000 10000
25oC
125oC
B
@ IC=10I
75oC
Collector Current - IC (mA)
HSB772 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 3/4
10
Safe Operating Area
PT=1mS
PT=100mS
(A)
C
1
PT=1S
Collector Current-I
0.1
1 10 100
Forwar d Biased Vol tage (V)
1.6
1.4
1.2
1
0.8
0.6
0.4
PD(W), Power Dissipation
0.2
0
0 50 100 150 200
Power Derat i ng
Ta(oC), Ambient Temper atur e
HSB772 HSMC Product Specification
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HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
A
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 4/4
Marking:
HB
S
B
772
D
C
N
M L K
E
F
3
2
1
O
H
I
G
J
Date Code
Style: Pin 1.Emitter 2.Collector 3.Base
Control Code
3-Lead TO-126ML Plastic Package
HSMC Packa
e Code: D
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB772 HSMC Product Specification
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