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HI-SINCERITY
MICROELECTRONICS CORP.
HSB649A
SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier complementary pair with HSD669A.
Spec. No. : HE6629
Issued Date : 1995.12.18
Revised Date : 2002.04.03
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation ........................................................................................................ 1 W
Total Power Dissipation (Tc=25°C)..................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC).................................................................................................. -1.5 A
IC Collector Current (Pulse) ................................................................................................ -3 A
TO-126ML
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -180 - - V IC=-1mA, IE=0
BVCEO -160 - - V IC=-10mA, IB=0
BVEBO -5 - - V IE=-1mA, IC=0
ICBO - - -10 uA VCB=-160V, IE=0
*VCE(sat) - - -1 V IC=-500mA, IB=-50mA
*VBE(on) - - -1.5 V IC=-150mA, VCE=-5V
*hFE1 60 - 200 IC=-150mA, VCE=-5V
*hFE2 30 - - IC=-500mA, VCE=-5V
fT - 140 - MHz IC=-150mA ,VCE=-5V
Cob - 27 - pF VCB=-10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank B C
Range 60-120 100-200
HSB649A HSMC Product Specification
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HI-SINCERITY
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6629
Issued Date : 1995.12.18
Revised Date : 2002.04.03
Page No. : 2/3
1000
125oC
75oC
100
hFE
10
1
1 10 100 1000 10000
25oC
hFE @ VCE=5V
Collector Current-IC (mA)
ON Voltage & Collector Current
10000
BE(ON)
V
@VCE=5V
Current Gain & Collector Current
10000
CE(sat)
V
1000
100
Satur ation Volta g e ( m V)
10
1 10 100 1000 10000
B
@ IC=10I
125oC
25oC
Collector Current - IC (mA)
75oC
Capacit an ce & Rev er se- B i ased Voltage
100
Sat urati on Volta ge & C ollector Current
1000
ON Voltage ( m V)
100
1 10 100 1000 10000
25oC
125oC
Collector Current -IC (mA)
75oC
Safe Operatin g Ar ea
100000
10000
1000
100
Collect or Curr e nt ( mA
10
PT=1ms
PT=100ms
PT=1s
10
Capacitance (pF)
1
0.1 1 10 100
Reverse- Biased Vol tage (V)
Cob
1
1 10 100 1000
Forwar d Biased Vol tage (V)
HSB649A HSMC Product Specification
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HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
A
D
C
N
M L K
E
F
3
2
1
Spec. No. : HE6629
Issued Date : 1995.12.18
Revised Date : 2002.04.03
Page No. : 3/3
Marking:
HB
S
B
O
H
I
G
J
Date Code
Style: Pin 1.Emitter 2.Collector 3.Base
469
A
Rank
Control Code
3-Lead TO-126ML Plastic Package
HSMC Packa
e Code: D
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB649A HSMC Product Specification
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