Datasheet HMC174MS8 Datasheet (Hittite)

'99

new!

MICROWAVE CORPORATION

HMC174MS8

GaAS MMIC MSOP8 T/R SWITCH DC - 3 GHz

7

FEBRUARY 2001

Features

ULTRA SMALL PACKAGE: MSOP8

HIGH THIRD ORDER INTERCEPT: +60 dBm

SINGLE POSITIVE SUPPLY: +3 TO +10V

HIGH RF POWER CAPABILITY

V02.0101

General Description

The HMC174MS8 is a low-cost SPDT switch in an 8­lead MSOP package for use in transmit-receive appli­cations which require very low distortion at high signal
power levels. The device can control signals from DC
to 3.0 GHz and is especially suited for 900 MHz, 1.8-

2.2 GHz, and 2.4GHz ISM applications with only 0.5
dB loss. The design provides exceptional
intermodulation performance; providing a +60dBm
third order intercept at 8 Volt bias. RF1 or RF2 is a
reflective short when "Off". On-chip circuitry allows
single positive supply operation at very low DC current
with control inputs compatible with CMOS and most
TTL logic families. They are especially suited for
PCMCIA wireless card and cellular phone applica­tions.

Guaranteed Performance, Vdd = +5 Vdc, 50 Ohm System, -40 to +85 deg C

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SWITCHES

SPDT

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SMT

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

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zHG0.2-CD
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zHG0.3-CD

zHG0.1-CD
zHG0.2-CD
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zHG0.1-CD
zHG0.2-CD
zHG5.2-CD
zHG0.3-CD

zHG0.3-5.0

zHG0.3-5.0

zHG0.3-CD

22
02
71
31

02
61
31

9

53
43

55
55

7 - 30

5.0

5.0

7.0

4.1

52
42

12

71
82

12

71

11

93
83

06
06

01
42

7.0

8.0

0.1

8.1

Bd
Bd
Bd
Bd

Bd
Bd
Bd
Bd

Bd
Bd
Bd
Bd

mBd
mBd

mBd
mBd

Sn
Sn

MICROWAVE CORPORATION

HMC174MS8 MSOP8 T/R SWITCH DC - 3 GHz

new!

HMC174MS8

'99

V02.0101

Insertion Loss

0

-0.5

-1

-1.5

-2

-2.5

-3

INSERTION LOSS (dB)

-3.5

-4
0123

FREQUENCY (GHz)

Return Loss

FEBRUARY 2001

Isolation

0

-10

-20

ISOLATION (dB)

-30

-40
0123

FREQUENCY (GHz)

7

0

-10

-20

-30

INPUT RETURN LOSS (dB)

-40
0123

FREQUENCY (GHz)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 31

SWITCHES

SPDT

SMT

'99

new!

MICROWAVE CORPORATION

HMC174MS8 MSOP8 T/R SWITCH DC - 3 GHz

FEBRUARY 2001

Input 0.1 and 1.0 dB
Compression vs Bias Voltage

45

1dB at 900MHz

1db at 1900MHz

40

35

30

COMPRESSION (dBm)

25

2 4 6 8 10 12

BIAS (Volts)

0.1dB at 900MHz

0.1dB at 1900MHz

HMC174MS8

Input Third Order
Intercept vs Bias Voltage

65
60

900MHz

55

50

IP3 (dBm)

45

40

35

2 4 6 8 10 12

1900MHz

BIAS (Volts)

V02.0101

Compression vs Bias Voltage

7

SWITCHES

SPDT

Caution: Do not operate in 1dB compression at power levels
above +35dBm and do not 'hot switch' power levels greater
than +23dBm (Vdd = +5Vdc).

SMT

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Bd1.0rof

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Distortion vs Bias Voltage

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Bd1rof

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ddV

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5350965157885

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01060995060906

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 32

MICROWAVE CORPORATION

HMC174MS8 MSOP8 T/R SWITCH DC - 3 GHz

new!

HMC174MS8

'99

V02.0101

Functional Diagram

GND

RF2 GND

A

B

RF1

RF

Vdd

Absolute Maximum Ratings

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)B&A(egnaRegatloVlortnoCcdVddV+ot2.0-

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Outline

GND

RF2

RF1

0.116/0.120
(2.95/3.05)

FEBRUARY 2001

T ruth Table

*Control Input Voltage Tolerances are ± 0.2 Vdc

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ddV

A

)cdV(

30 0 0351-51-FFOFFO
30 ddV5252-0NOFFO
3ddV0 52052-FFONO
50 0 01155-55-FFOFFO
50 ddV511001-51-NOFFO
5ddV0 511

010 0 083091-091-FFOFFO
010 ddV594572-

01ddV0 594
5ddV-ddV006006-522NOFFO
5ddVddV-006522006-FFONO

B

)cdV(

saiB

tnerruC

ddvI

)cdV(

)Aµ(

LOT NUMBER

lortnoC

lortnoC

tnerruC

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bI

)Aµ(

-51

-022

001-FFONO

-022
572-FFONO

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1FR

NOFFO

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2FRotFR

7

0.116/0.120

0.038/0.042
(0.96/1.07)

HMC

174

PIN 1

0.0256 TYP
(0.65)

A B RF +Vdd

1) MATERIAL:
A) PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC, SILICA & SILICONE IMPREGNATED
B) LEADFRAME MATERIAL: COPPER ALLOY

2 . PLATING: LEAD-TIN SOLDER PLATE

3. DIMENSIONS ARE IN INCHES (MILLIMETERS)

0.188/0.196
(4.78/4.98)(2.95/3.05)

0.032/0.036
(0.81/0.91)

0.012 TYP

(0.30)

0-5 DEG

XXXX

YYWW

0.021 MIN TYP
(0.53)

DATE CODE
YY= YEAR
WW= WEEK

PIN 1 (REF)

0.005/0.007
(0.13/0.18)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 33

SWITCHES

SPDT

SMT

'99

new!

MICROWAVE CORPORATION

HMC174MS8 MSOP8 T/R SWITCH DC - 3 GHz

FEBRUARY 2001

Typical Application Circuit

RF2

Pin 1

+Vdd

HMC174MS8

V02.0101

RF1

GND

GND

A

B

Vdd

Notes:

7

1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.

2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates and
to pin 4 of the RF switch.

3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.

4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF
power capability) at bias voltages down to +3V.

SWITCHES

SPDT

SMT

CTL

RF

74HC04 or

74HCT04

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 34

MICROWAVE CORPORATION

HMC174MS8 MSOP8 T/R SWITCH DC - 3 GHz

new!

HMC174MS8

'99

V02.0101

FEBRUARY 2001

Evaluation Circuit Board

The circuit board used in the final application should use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground leads should be connected directly to the ground plane
similar to that shown below. A sufficient number of VIA holes should be used to connect the top and bottom
ground planes. The evaluation circuit board as shown is available from Hittite upon request.

7

Evaluation Circuit Board Layout Design Details

Layout Technique Grounded Co-Planar Waveguide (GCPW)
Material FR4
Dielectric Thickness 0.028" (0.71 mm)
50 Ohm Line Width 0.037" (0.94 mm)
Gap to Ground Edge 0.010" (0.25 mm)
Ground VIA Hole Diameter 0.014" (0.36 mm)

Connectors SMA-F ( EF - Johnson P/N 142-0701-806)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 35

SWITCHES

SPDT

SMT