Datasheet HMC173MS8 Datasheet (Hittite)

MICROWAVE CORPORATION

HMC173MS8

GaAs MMIC VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz

FEBRUARY 2001

2

ATTENUATORS

SMT

Features

SINGLE POSITIVE VOLTAGE CONTROL: 0 to +3V

HIGH ATTENUATION RANGE: >50 dB @ 0.9 GHz

HIGH P1dB COMPRESSION POINT: +16 dBm

ULTRA SMALL PACKAGE: MSOP

General Description

The HMC173MS8 is a miniature absorp­tive voltage variable attenuator in an 8­lead MSOP package. The device oper­ates with a positive supply voltage, and a
positive control voltage. Unique features
include a high dynamic attenuation range,
and excellent power handling performance
through all attenuation states. The
HMC173MS8 is ideal for operation in wire­less applications between 800 MHz and
1600 MHz. 1.7 to 2.0 GHz operation is
possible, with a reduced maximum attenu­ation of 30 dB and increased VSWR. The
HMC173MS8 can be used with an exter­nal driver circuit for improved linearity of
attenuation.

Guaranteed Performance V

Parameter Min Typical Max Units

Insertion Loss (Min.Atten.)
(V

=0.0Vdc)

CTL

Attenuation Range
(V

=0to+3V)

CTL

Flatness
(Peak to Peak)

Return Loss
(V

=0to+3V)

CTL

Input Power for 0.1 dB Compression
(825 MHz)

Input Power for 1.0 dB Compression
(825 MHz)

Input Third Order Intercept
825 MHz, two tones @ +5.0 dBm

SwitchingCharacteristics
t

RISE,tFALL

t

ON,tOFF

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

(10/90% R F )

(50% CTL to 10/90%RF )

2 - 26

800-1000 MHz
1000-1600 MHz
1600-2000 MHz

800-1000 MHz
1000-1600 MHz
1600-2000 MHz

800-1000 MHz
1000-1600 MHz

800-1000 MHz
1000-1600 MHz
1600-2000 MHz

Min Atten.
Atten.>2.0

Min Atten.
Atten.>2.0

Min Atten.
Atten.>2.0

800-2000 MHz 1.0

= +4.0 Vdc, 50 Ohm System, -40 to +85°C

dd

45
27
25

10
30

15

21

1.8

2.6

3.2
52

32
30

±0.15
±0.25

6
5
5

12

8
7

19

9

25
16

37
21

1.2

2.3

3.1

3.7

dB
dB
dB

dB
dB
dB

dB
dB

dB
dB
dB

dBm
dBm

dBm
dBm

dBm
dBm

µS
µS

HMC173MS8

MICROWAVE CORPORATION

HMC173MS8 VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz

FEBRUARY 2001

Attenuation vs. Control Voltage
@900 and 1900 MHz

0

-10

-20

-30

-40

ATTENUATION (dB)

-50

-60
0 0.5 1 1.5 2 2.5 3

CONTROL VOLTAGE (V)

825

1900 MHz

MHz

Attenuation vs. Temperature
Normalized to +25°C @825 MHz

10

8
6

4
2

0

-2

-4

-6

-8

NORMALIZED ATTENUATION (dB)

-10
0 0.5 1 1.5 2 2.5 3

CONTROL VOLTAGE (V)

-40C

+85C

Broadband Attenuation and
Insertion Loss

0

-10

-20

-30

-40

-50

ATTENUATION (dB)

-60

-70

0.6 0.8 1 1.2 1.4 1.6 1.8 2

FREQUENCY (GHz)

0

-1

-2

-3

-4

-5

INSERTION LOSS (dB)

-6

-7

Input IP3 vs. Control Voltage
@825 MHz

40

35
30

25

20

15

825 MHz INPUT IP3 (dBm)

10

0 0.5 1 1.5 2 2.5 3

+85C

CONTROL VOLTAGE (V)

-40C

+25C

Input P1dB Compression
@825 MHz

Input Power For 1 dB Compression Point

Test Condition

(825MHz)

Min.Attenuation 0.0 +4.0 26 24 25 dBm

Max.Attenuation +3.0 +4.0 16.5 15 23 dBm

Worst Case
P1dB @
Typical V

CTL

V

Vdd

CTL

(Vdc)

+1.8 +4.0 16.5 15.5 14 dBm

+25C +85C -40C Units

(Vdc)

Broadband Return Loss vs.
Control Voltage

0

-5
V

0

-10
2V

-15

RETURN LOSS (dB)

-20

0.6 0.8 1 1.2 1.4 1.6 1.8 2
FREQUENCY (GHz)

2.25V

3V

2

ATTENUATORS

SMT

S - Parameter data is available On-Line at www.hittite.com

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 27

HMC173MS8

MICROWAVE CORPORATION

HMC173MS8 VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz

FEBRUARY 2001

Typical Performance for 800-1000 MHz Applications

2

ATTENUATORS

SMT

Attenuation vs. Control Voltage
825 MHz

0

-10

-20

-30

-40

ATTENUATION (dB)

-50

-60
0 0.5 1 1.5 2 2.5 3

+85C

+25C

CONTROL VOLTAGE (V)

-40C

Return Loss vs. Control Voltage
825 MHz

0

-2

-4

-6

-8

-10

-12

-14

RETURN LOSS (dB)

-16

-18

-20
0 0.5 1 1.5 2 2.5 3

CONTROL VOLTAGE (V)

-40C and +85C

+25C

Typical Performance for 1800-1900 MHz Applications

Attenuation vs. Control Voltage
1900 MHz

0

-5

-10

-15

-20

-25

ATTENUATION (dB)

-30

-35
0 0.5 1 1.5 2 2.5 3

-40C

+25C

CONTROL VOLTAGE (V)

+85C

Return Loss vs. Control Voltage
1900 MHz

0

-2

-4

-6

-8

-10

-12

-14

RETURN LOSS (dB)

-16

-18

-20
0 0.5 1 1.5 2 2.5 3

CONTROL VOLTAGE (V)

+25C

+85C

-40C

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 28

HMC173MS8

MICROWAVE CORPORATION

HMC173MS8 VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz

FEBRUARY 2001

Functional Diagram

RF2 V

GND N/C

PIN 1

* NOTE: DC blocking capacitors are required for each RF port. Capacitor value
determines lowest frequency of operation.

V

dd

CTL

N/CGNDRF1

Outline Drawing

Gnd

Vdd

RF2

N/C

0.116/ 0.120
(2.95/ 3.05)

Control and Bias Voltages

V

LTC

ddV001+@cdV1.0-/+cdV0.4+ µA

001-@cdV0.3+ot0 µ 001+otA µA

Absolute Maximum Ratings

V

CTL

Vdd +8 Vdc
MaximumInput Power

Vdd = +4.0 Vdc
Storage Temperature -65 to +150 deg.C
Operating Temperature -40 to +85 deg.C

-0.2 Vdc to Vdd

+29 dBm
+21 dBm

LOT NUMBER

Min Attenuation
Att.> 2 dB

2

ATTENUATORS

SMT

0.116/ 0.120
(2.95/ 3.05)

PIN 1

0.038/ 0.042
(0.96/ 1.07)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

0.0256 TYP
(0.65)

1. MATERIAL:
A) PACKAGE BODY - LOW STRESS INJECTION - MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED.
B) LEADFRAME MATERIAL: COPPER ALLOY

2. PLATING: LEAD - TIN SOLDER PLATE

3. DIMENSIONS ARE IN INCHES (MILLIMETERS), UNLESS OTHERWISE SPECIFIED TOL. ARE ±0.005(±0.13)

4. TAPE AND REEL SHIPMENT PACKAGING AVAILABLE, SEE PAGE 10 - 1

HMC

173

RF1

Gnd

CTL

V

0.188/ 0.196
(4.78/ 4.98)

N/C

0.032/ 0.036

0.012 TYP
(0.30)

(0.81/ 0.91)

0 to 5 deg

XXXX

YYWW

0.021 MIN TYP
(0.53)

DATE CODE
YY= YEAR
WW= WEEK

PIN 1 (REF)

0.005/ 0.007
(0.13/ 0.18)

2 - 29

HMC173MS8

MICROWAVE CORPORATION

HMC173MS8 VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz

FEBRUARY 2001

Attenuation Linearizing Control Circuit For The
HMC173MS8 Voltage Variable Attenuator

A driver circuit to improve the attenuation linearity of the HMC173MS8 can be implemented with a simple op-amp
configuration. A breakpoint linearization circuit will scale the voltage supplied to the control line of the HMC173MS8,
so that a more linear attenuation vs. control voltage slope can be achieved. A -5V and +5V supply is required.

2

ATTENUATORS

SMT

Diode and resistor values which define the op-amp gain, and breakpoint were selected to optimize a measured
production lot of attenuators at 825 MHz. R7 may be varied to optimize the performance of any given attenuator. If the
input voltage to the linearizing circuit will not drop below 1.0V, then R9 and D2 may be omitted, and this will greatly reduce
the overall power consumption of the driver circuit.

The linearizing circuit has been optimized for 825 MHz attenuation applications. A similar approach may be used at other
frequencies by adjusting RI - R9 resistor values.

Required Parts List Schematic

Part Description Manufacturer

AD822 Op-Amp Analog Devices
R1 10K ohms Panasonic
R2 200K ohms Panasonic
R3 7.5K ohms Panasonic
R4 39K ohms Panasonic
R5 220K ohms Panasonic
R6 91K ohms Panasonic
R7 910 ohms Panasonic
R8 51 ohms Panasonic
R9 100 ohms Panasonic
D1, D2 LL4148 D-35 Di gi key

Return Loss vs. Control Voltage
@ 825 MHz

-12

-13

-14

-15

-16

With
Linearizer

-17

RETURN LOSS (dB)

-18

-19

0.5 1 1.5 2 2.5 3
CONTROL VOLTAGE (Vdc)

Without
Linearizer

V

CTL IN

0

R6

R5

R8

0

R7

+5

-5V

3

7

U3

+

2

D1

R4

AD820/AD

_

R1

-5V

6

V+
V-

4

R2

R3

Attenuation vs. Control Voltage
@ 825 MHz

0

-10

-20

-30

-40

ATTENUATION (dB)

-50

-60
0123

With
Linearizer

CONTROL VOLTAGE (Vdc)

R9

D2

+5V

V

CTL OUT

Without
Linearizer

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 30

HMC173MS8

MICROWAVE CORPORATION

HMC173MS8 VOLTAGE VARIABLE ATTENUATOR 800-2000 MHz

Evaluation Circuit Board

FEBRUARY 2001

2

ATTENUATORS

The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to
that shown below. A sufficient number of VIA holes should be used to connect the top and bottom ground planes.
The evaluation circuit board as shown is available from Hittite upon request.

Evaluation Circuit Board Layout Design Details

Layout Technique Grounded Co-Planar Waveguide (GCPW)
Material FR4
Dielectric Thickness 0.028" (0.71 mm)
50 Ohm Line Width 0.037" (0.94 mm)
Gap to Ground Edge 0.010" (0.25 mm)
Ground VIA Hole Diameter 0.014" (0.36 mm)

Connectors SMA-F ( EF - Johnson P/N 142-0701-806)

SMT

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

2 - 31