Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HBF4522D
NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
Description
HBF4522D is designed for use i n the monit or dy nami c foc us circui t. I t
can be used up to 19" monitor with working frequency as high as
100KHz.
Features
• High Breakdown Voltage
• Low C-E Saturation Voltage
• High Cutoff Frequency
• High Current Gain
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 1/3
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.5 W
Total Power Dissipation (Tc=25°C)..................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 550 V
BVCEO Collector to Emitter Voltage.................................................................................. 550 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current................................................................................................................ 20 mA
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCEO 550 - - V IC=1mA
BVCBO 550 - - V IC=100uA
BVEBO 7 - - V IE=10uA,
ICBO - - 1 uA VCB=500V
IEBO - - 100 nA VEB=5V
*VCE(sat) - 0.35 0.5 V IC=30mA, IB=3mA
*hFE 100 150 200 VCE=20V, IC=30mA
fT 90 - - MHz VCE=10V, IE=30mA, ftest=100MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HBF4522D HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 2/3
1000
Current Gain & Col lector Current
125oC
100
hFE
10
1000
25oC
1 10 100
Collector Current - IC (mA)
Sat urati on Voltage & Col lector Current
25oC
75oC
hFE @ VCE=20V
100000
CE(sat)
V
10000
1000
Saturation Voltage (mV)
100
10
1 10 100
B
@ IC=10I
125oC
25oC
Collector Current-IC (mA)
75oC
Capacitance & Reverse- B iased Volta ge
10
Sat ur ation Voltage & Collector C urrent
125oC 75oC
Saturat ion Volta ge ( m V)
100
1 10 100
Collector Current-IC (mA)
BE(sat)
V
@ IC=10I
Cut off Frequ ency & Col l ect or Current
1000
Cutoff Fr equen cy ( M Hz)...
fT @ VCE=10V
Cob
Capacitance (pf)
B
1
0.1 1 10 100
Rev e r se Biased Voltage ( V)
Safe Operati ng Area
(A)
C
Collector Current-I
10
1
0.1
0.01
PT=1ms
PT=100ms
PT=1s
100
1 10 100
Collector Current-IC (mA)
0.001
1 10 100 1000
Forwar d Biased Vol tage (V)
HBF4522D HSMC Product Specification
Page 3
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-126ML Dimension
A
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 3/3
Marking:
HF
B
B
542
2D
D
C
E
F
3
O
H
Date Code
Control Code
Style: Pin 1.Emitter 2.Collector 3.Base
2
N
M L K
1
G
J
I
3-Lead TO-126ML Plastic Package
HSMC Packa
e Code: D
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1356 0.1457 3.44 3.70 I - *0.1795 - *4.56
B 0.0170 0.0272 0.43 0.69 J 0.0268 0.0331 0.68 0.84
C 0.0344 0.0444 0.87 1.12 K 0.5512 0.5906 14.00 15.00
D 0.0501 0.0601 1.27 1.52 L 0.2903 0.3003 7.37 7.62
E 0.1131 0.1231 2.87 3.12 M 0.1378 0.1478 3.50 3.75
F 0.0737 0.0837 1.87 2.12 N 0.1525 0.1625 3.87 4.12
G 0.0294 0.0494 0.74 1.25 O 0.0740 0.0842 1.88 2.14
H 0.0462 0.0562 1.17 1.42
Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBF4522D HSMC Product Specification
Loading...