Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HBF422
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Video B-class Power stages in TV-receivers
Spec. No. : HE6404
Issued Date : 1993.03.18
Revised Date : 2002.04.18
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 830 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage....................................................................................... 250 V
VCEO Collector to Emitter Voltage.................................................................................... 250 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ......................................................................................................... 50 mA
TO-92
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 250 - - V IC=100uA
BVCEO 250 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 100 nA VCB=200V
IEBO - - 10 uA VEB=5V
*VCE(sat) - - 0.6 V IC=30mA, IB=3mA
*hFE 50 - - VCE=20V, IC=25mA
fT 60 - - MHz IE=10mA, VCE=10V, f=100MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HBF422 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6404
Issued Date : 1993.03.18
Revised Date : 2002.04.18
Page No. : 2/3
1000
100
hFE
1000
10
Current Gain & Collector Current
hFE @ VCE=20V
125oC
25oC
75oC
0.1 1 10 100
Collector Current-IC (mA)
Sat urati on Voltage & Coll ector Cu rrent
25oC
1000
Sat urati on Voltage & Coll ector Cu rrent
CE(sat)
V
Saturat ion Volta ge- ( m V)
100
0.1 1 10 100
100
Capacitance & Rev erse-Biased Volta ge
B
@ IC=10I
125oC
Collector Current- IC (mA)
75oC
25oC
75oC
125oC
BE(sat)
V
Saturat ion Volta ge ( m V)
100
0.1 1 10 100
1000
100
Cutoff Fr equen cy ( M Hz)...
Collector Current-IC (mA)
Cutoff Frequency & Collector Current
VCE=10V
@ IC=10I
10
B
Capacitance (pF)
Cob
1
0.1 1 10 100 1000
10000
PT=100ms
1000
PT=1s
(mA)
C
100
10
Collector Current-I
Reverse Biased Volt age (V)
Safe Operati ng Area
PT=1ms
10
1 10 100
Collector Curren t-IC (mA)
1
1 10 100 1000
Forwar d Biased Voltage-VCE (V)
HBF422 HSMC Product Specification
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HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6404
Issued Date : 1993.03.18
Revised Date : 2002.04.18
Page No. : 3/3
A
α2
B
31
2
Marking:
HF
B
242
Date Code Control Code
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Collector 3.Base
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
*: Typical
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
α1
α2
α3
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBF422 HSMC Product Specification
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