Page 1
January 1996
HA-5222/883
Dual, Low Noise, Wideband,
Precision Operational Amplifier
Features
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Gain Bandwidth Product. . . . . . . . . . . . . 100MHz (Min)
• Unity Gain Bandwidth . . . . . . . . . . . . . . . . 30MHz (Min)
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . 25V/µs (Min)
• Low Offset Voltage. . . . . . . . . . . . . . . . . . 0.75mV (Max)
• High Open Loop Gain . . . . . . . . . . . . . . . . .106dB (Min)
• Channel Separation (at 10kHz). . . . . . . . . . 110dB (Typ)
• Low Voltage Noise (at 1kHz) . . . . . . . . 5.9nV/√
• Low Current Noise (at 1kHz). . . . . . . . 2.7pA/√
• High Output Current . . . . . . . . . . . . . . . . . ±30mA (Min)
• Low Supply Current (per Op Amp.) . . . . . . 10mA (Max)
40MHz (Typ)
37V/µs (Typ)
0.30mV (Typ)
128dB (Typ)
Hz (Max)
3.3nV/√
1.3pA/√
Hz (Typ)
Hz (Max)
Hz (Typ)
±56mA (Typ)
8mA (Typ)
Applications
• Precision Test Systems
• Active Filtering
• Small Signal Video
• Accurate Signal Processing
• RF Signal Conditioning
Description
The HA-5222/883 is a dual, high performance, dielectrically
isolated, monolithic op amp, featuring precision DC characteristics while providing excellent AC characteristics.
Designed for audio, video, and other demanding applications, noise (3.3nV/√
tion (<0.005% typ), and DC errors are kept to a minimum.
The precision performance is shown by low offset voltage
(0.3mV typ), low bias currents (40nA typ), low offset currents (15nA typ), and high open loop gain (128dB typ). The
combination of these excellent DC characteristics with fast
settling time (0.4µs typ) make the HA-5222/883 ideally
suited for precision signal conditioning.
The unique design of the HA-5222/883 gives this device outstanding AC characteristics, including high unity gain bandwidth (40MHz typ) and high slew rate (37V/µs typ), not
normally associated with precision op amps. Other key specifications include high CMRR (95dB typ) and high PSRR
(100dB typ). The combination of these specifications will
allow the HA-5222/883 to be used in RF signal conditioning
as well as video amplifiers.
Hz at 1kHz typ), total harmonic distor-
Ordering Information
PART
NUMBER
HA7-5222/883 -55oC to +125oC 8 Lead CerDIP
TEMPERATURE
RANGE PACKAGE
Pinout
HA-5222/883
(CERDIP)
TOP VIEW
1
OUT1
-IN1
2
1
-
+IN1
V-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 1999
+
3
4
3-169
8
V+
7
OUT2
6
2
-
+
-IN2
5
+IN2
Spec Number
File Number 3717.1
511062-883
Page 2
Specifications HA-5222/883
Absolute Maximum Ratings Thermal Information (Typical)
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 36V
Differential Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current (Pulsed at 1ms, 10% Duty Cycle). . . . .100mA
Continuous Output Current. . . . . . . . . . . . . . Short Circuit Protected
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V to ±15V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
PARAMETERS SYMBOL CONDITIONS
Input Offset Voltage V
Input Bias Current +I
Input Offset Current I
Common Mode Range +CMR V+ = +3V, V- = -27V 1 +25oC12-V
Large Signal Voltage
Gain
Common Mode
Rejection Ratio
Output Voltage Swing +V
SUPPLY
= ±15V, R
= 1kΩ, V
LOAD
VCM = 0V 1 +25oC -0.75 0.75 mV
IO
VCM = 0V,
B
= 0V, Unless Otherwise Specified.
OUT
+RS = 100.1kΩ,
-RS = 100Ω
-I
VCM = 0V, +RS = 100Ω,
B
-RS = 100.1kΩ
IO
VCM = 0V,
+RS = 100.1kΩ,
-RS = 100.1kΩ
-CMR V+ = +27V, V- = -3V 1 +25oC - -12 V
+A
-A
VOL
VOL
V
= 0V and +10V 4 +25oC 106 - dB
OUT
V
= 0V and -10V 4 +25oC 106 - dB
OUT
+CMRR ∆VCM = +10V,
V+ = +5V, V- = -25V,
V
= -10V
OUT
-CMRR ∆VCM = -10V,
V+ = +25V, V- = -5V,
V
= +10V
OUT
OUT
-V
OUT
RL = 1kΩ 4 +25oC 12.0 - V
RL = 1kΩ 4 +25oC - -12.0 V
Thermal Resistance θ
JA
CerDIP Package . . . . . . . . . . . . . . . . . . . 96oC/W 16oC/W
Package Power Dissipation Limit at +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.04W
Package Power Dissipation Derating Factor Above +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10.4mW/oC
V
≤ 1/2 (V+ - V-)
INCM
RL≥ 1kΩ
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
2, 3 +125oC, -55oC -1.5 1.5 mV
1 +25oC -80 80 nA
2, 3 +125oC, -55oC -200 200 nA
1 +25oC -80 80 nA
2, 3 +125oC, -55oC -200 200 nA
1 +25oC -50 50 nA
2, 3 +125oC, -55oC -150 150 nA
2, 3 +125oC, -55oC12 - V
2, 3 +125oC, -55oC - -12 V
5, 6 +125oC, -55oC 100 - dB
5, 6 +125oC, -55oC 100 - dB
1 +25oC88-dB
2, 3 +125oC, -55oC86 - dB
1 +25oC88-dB
2, 3 +125oC, -55oC86 - dB
5, 6 +125oC, -55oC 11.5 - V
5, 6 +125oC, -55oC - -11.5 V
θ
JC
3-170
Spec Number 511062-883
Page 3
Specifications HA-5222/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
PARAMETERS SYMBOL CONDITIONS
Output Current +I
Quiescent Power Supply
Current
Power Supply
Rejection Ratio
SUPPLY
= ±15V, R
OUT
-I
OUT
+I
CC
-I
CC
+PSRR ∆V
-PSRR ∆V
= 1kΩ, V
LOAD
V
= +10V, RL = 1kΩ 4 +25oC30-mA
OUT
V
= -10V, RL = 1kΩ 4 +25oC - -30 mA
OUT
V
= 0V, I
OUT
V
= 0V, I
OUT
SUP
V+ = +20V, V- = -15V,
V+ = +10V, V- = -15V
SUP
V+ = +15V, V- = -20V,
V+ = +15V, V- = -10V
= 0V, Unless Otherwise Specified.
OUT
GROUP A
SUBGROUPS TEMPERATURE
= 0mA 1 +25oC - 20 mA
OUT
= 0mA 1 +25oC -20 - mA
OUT
= 10V,
= 10V,
LIMITS
UNITSMIN MAX
5, 6 +125oC, -55oC30 - mA
5, 6 +125oC, -55oC - -30 mA
2, 3 +125oC, -55oC - 22 mA
2, 3 +125oC, -55oC -22 - mA
1 +25oC90-dB
2, 3 +125oC, -55oC86 - dB
1 +25oC90-dB
2, 3 +125oC, -55oC86 - dB
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTIC
Device Characterized at: V
SUPPLY
= ±15V, R
= 1kΩ, Unless Otherwise Specified.
LOAD
PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE
Input Noise Voltage
E
RS = 0Ω, fO = 10Hz 1, 5 +25oC - 16.0 nV/√Hz
N
Density
RS = 0Ω, fO = 100Hz 1, 5 +25oC - 6.6 nV/√Hz
RS = 0Ω, fO = 1kHz 1, 5 +25oC - 5.9 nV/√Hz
Input Noise Current
I
RS = 500kΩ, fO = 10Hz 1, 5 +25oC - 24.0 pA/√Hz
N
Density
RS = 500kΩ, fO = 100Hz 1, 5 +25oC - 6.6 pA/√Hz
RS = 500kΩ, fO = 1kHz 1, 5 +25oC - 2.7 pA/√Hz
Gain Bandwidth Product GBWP V
OUT
= 200mV
P-P
,
1 +25oC 100 - MHz
fO = 100kHz
-55oC to +125oC 88 - MHz
LIMITS
UNITSMIN MAX
Unity Gain Bandwidth UGBW V
Slew Rate ±SR V
Full Power Bandwidth FPBW V
= 200mV 1 +25oC 30 - MHz
OUT
-55oC to +125oC 25 - MHz
OUT
= ±2.5V,
1 -55oC to +125oC25 - V/µs
CL = 50pF
= 10V 1, 2 -55oC to +125oC 398 - kHz
PEAK
Spec Number
3-171
511062-883
Page 4
Device Characterized at: V
Specifications HA-5222/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTIC (Continued)
SUPPLY
= ±15V, R
= 1kΩ, Unless Otherwise Specified.
LOAD
LIMITS
PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE
Minimum Closed Loop
CLSG RL = 1kΩ, CL = 50pF 1 -55oC to +125oC 1 - V/V
UNITSMIN MAX
Stable Gain
Rise and Fall Time tR,t
V
F
= ±100mV 1, 4 +25oC - 20 ns
OUT
-55oC to +125oC - 35 ns
Overshoot ±OS V
= ±100mV 1 +25oC - 25 %
OUT
-55oC to +125oC - 30 %
Power Consumption PC V
OUT
= 0V, I
= 0mA 1, 3 -55oC to +125oC - 660 mW
OUT
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
5. Input Noise Voltage Density and Input Noise Current Density limits are based on characterization data.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In) 1
Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6
Group A Test Requirements 1, 2, 3, 4, 5, 6
Groups C and D Endpoints 1
NOTE:
1. PDA applies to Subgroup 1 only.
3-172
Spec Number
511062-883
Page 5
Die Characteristics
DIE DIMENSIONS:
78 x 185 x 19 mils ± 1 mils
1980 x 4690 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2 5% Phos.)
Silox Thickness: 12k
Å ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
4.2 x 10
4
A/cm
2
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 128
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5222/883
HA-5222/883
OUT1
-IN1
+IN1
V+
V-
OUT2
3-173
-IN2
+IN2
Spec Number 511062-883
Page 6
HA-5222
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is f or use as application
and design information only. No guarantee is implied.
Typical Performance Curves Unless Otherwise Specified: T
SUPPLY CURRENT/AMPLIFIER vs TEMPERATURE CHANNEL SEPARATION vs FREQUENCY
TYPICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: Supply Voltage = ±15V, R
PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS
Input Offset Voltage See Table 1 +25oC 0.30 mV
Average Offset Voltage Drift See Table 1 Full 0.50 µV/oC
Input Bias Current See Table 1 +25oC40nA
Input Offset Current See Table 1 +25oC15nA
Differential Input Resistance See Table 1 +25oC70kΩ
Input Noise Voltage fO = 0.1Hz to 10Hz +25oC 0.33 µV
Input Noise Voltage Density fO = 10Hz +25oC 6.4 nV/√Hz
fO = 100Hz +25oC 3.7 nV/√Hz
fO = 1kHz +25oC 3.3 nV/√Hz
Input Noise Current Density fO = 10Hz +25oC 8 pA/√Hz
fO = 100Hz +25oC 2.7 pA/√Hz
fO = 1kHz +25oC 1.3 pA/√Hz
THD & N See Note 1 +25oC 0.005 %
Large Signal Voltage Gain V
OUT
= 1kΩ, CL = 50pF, Unless Otherwise Specified
L
= 0V to ±10V +25oC 128 dB
= +25oC, V
A
= ±15V
SUPPLY
Full 0.35 mV
Full 70 nA
Full 30 nA
Full 120 dB
P-P
3-174
Spec Number 511062-883
Page 7
HA-5222
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is f or use as application
and design information only. No guarantee is implied.
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: Supply Voltage = ±15V, RL = 1kΩ, CL = 50pF, Unless Otherwise Specified
PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS
Common Mode Rejection Ratio ∆VCM = ±10V Full 95 dB
Unity Gain Bandwidth -3dB +25oC 40 MHz
+125oC 33 MHz
-55oC 50 MHz
Gain Bandwidth Product 1kHz to 400kHz +25oC 140 MHz
+125oC 115 MHz
-55oC 160 MHz
Minimum Gain Stability Full 1 V/V
Output Voltage Swing RL = 333Ω Full 110 V
RL = 1K +25oC 112.5 V
Full 112.1 V
Output Current V
Output Resistance +25oC10V
Full Power Bandwidth FPBW = SR/2πV
Channel Separation fO = 10kHz +25oC 110 dB
Slew Rate V
Rise Time V
Overshoot V
Settling Time 10V
Power Supply Rejection Ratio ∆VS = ±10V to ±20V Full 100 dB
Supply Current Quiescent, V
Minimum Supply Voltage Functional Operation Only.
NOTE:
1. A
= 10, fO = 1kHz, V
VCL
= 5Vrms, RL = 600Ω, 10Hz to 100kHz, Minimum resolution of test equipment is 0.005%.
OUT
= ±10V Full 156 mA
OUT
,
V
= 10V
PEAK
= ±2.5V +25oC37V/µs
OUT
PEAK
+25oC 398 kHz
+125oC39V/µs
-55oC36V/µs
= ±100mV +25oC16ns
OUT
+125oC17ns
-55oC17ns
= ±100mV +25oC12%
OUT
+125oC11%
-55oC12%
, AV = -1 0.1% +25oC 0.4 µs
STEP
0.01% +25oC 1.5 µs
I
OUT
= 0mA
OUT
= 0V,
Full 8 mA/Op Amp
+25oC15V
Other Parameters May Vary.
3-175
Spec Number 511062-883
Page 8
HA-5222
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under an y patent or patent rights of Intersil or its subsidiaries.
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3-176
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Taipei, Taiwan
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FAX: (886) 2 2715 3029
Spec Number 511062-883
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