Datasheet HA-5134-883 Datasheet (intersil)

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HA-5134/883

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July 2001

Features

• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

• Low Offset Voltage (+25

o

C).............200µV(Max)

(FullTemp.)............350µV(Max)

• LowOffsetVoltageDriftatTemp........2µV/

o

C(Max)

• OffsetVoltageMatch..................350µV(Max)

• HighChannelSeparation ..............120dB(Min)

• Low Noise (f ≥ 100Hz) . . . ...........10nV/√Hz

• WideBandwidth.......................4MHz(Typ)

• HighCMRR/PSRR....................100dB(Min)

• HighVoltageGain .................. 800kV/V (Min)

• Dielectric Isolation

Applications

• Instrumentation Amplifiers

• State-Variable Filters

• Precision Integrators

(Max)

Precision Quad Operational Amplifier

Description

The HA-5134/883 is a precision quad operational amplifier that is pi n compatible with the OP-400, LT1014, OP1 1, RM4156, and LM148 as well as the HA-4741/883. Each amplifier features guaranteed maximum values for offset voltage of 350µV, offset voltage drift of 2µV/ over the full military temperature range while CMRR/PSRR is guaranteed greater than 94dB and open loop gain is guaranteed above 500kV/V from -55 specifications exceed these values such as an offset voltage matching specification between channels of 200µV(max)at

o

+25

C.

Precision performance of the HA-5134/883 is enhanced by a noise voltage density of 7nV/√Hz density of 2pA/√Hz (min). Each of the four unity gain stabl e amps on the quad are electrically isolated, having only supply lines in common and are fabricated using Dielectric Isolation to insure quality performance in the most demanding applications.

The HA-5134/883 is ideal for compact circuits such as instrumentation amplifiers, state-variable filters, and low level transducer amplifiers. Other applications include precision data acquisition systems, precisionintegrators, and accurate threshold detectors indesigns where board space is a limitation.

o

C (max), and offset current of 75nA

o

C to +125oC. Room temperature

at 1kHz (typ), noise current

at 1kHz and channel separation of 120dB

• Threshold Detectors

• Precision Data Acquisition Systems

• Low-Level Transducer Amplifiers

Pinouts

HA-5134/883

(CERDIP)

TOP VIEW

OUT1

-IN1

+IN1

V+

+IN2

-IN2

OUT2

1

2

-1

+

3

4

5

+

2

6

7

14

13

4

+

12

11

10

+

3

--

Part Number Information

PART

NUMBER

HA1-5134/883 -55 HA4-5134/883 -55

OUT4

-IN4

+IN4

V-

+IN3

-IN3

9

OUT3

8

TEMPERATURE

+IN1

4

NC

5

V+

6

NC

7

+IN2

8

RANGE PACKAGE

o

Cto+125oC 14LeadCerDIP

o

Cto+125oC 20 Lead Ceramic LCC

HA-5134/883

(CLCC)

TOP VIEW

NC

-IN4

OUT4

+IN4

18

+

4

17

NC V-

16

3

--

OUT3

NC

15

+

14

+IN3

-IN3

OUT1

-IN1

3 2 1 20 19

+

--

1

2

+

9 10111213

-IN2 OUT2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1

Spec Number

File Number 3713.1

51 1 033- 883

Specifications HA-5134/883

Absolute Maximum Ratings Thermal Information

VoltageBetweenV+andV-Terminals....................40V

DifferentialInputVoltage ...............................6V

VoltageatEitherInputTerminal......................V+toV-

InputCurrent.......................................25mA

OutputCurrent....................FullShortCircuitProtection

OutputCurrentDuration...........................Indefinite

(One Amplifier Shorted to Ground)

JunctionTemperature.............................. +175

StorageTemperatureRange .................-65

o

Cto+150oC

ESDRating......................................<2000V

Lead Temperature(Soldering10s). . . . . .. . . . . . . . .. . . . . +300

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

OperatingTemperatureRange................-55oCto+125oC

Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

DeviceTested at: V

PARAMETERS SYMBOL CONDITIONS

InputOffsetVoltage V

OffsetVoltage Match ∆V

Input BiasCurrent +I

Input Offset Current I

Common Mode Range

LargeSignal Voltage Gain

Common Mode Rejection Ratio

Output Voltage Swing

SUPPLY

= ±15V,R

IO

B

-I

B

IO

SOURCE

=50Ω,R

LOAD

=100kΩ,V

VCM=0V 1 +25oC -200 200 µV

VIO(Max) -VIO(Min) 1+25

VCM=0V, +R

=10kΩ,

S

-R

=50Ω

S

VCM=0V, +R

=50Ω,

S

-R

=10kΩ

S

VCM=0V, +R

=10kΩ,

S

-R

=10kΩ

S

+CMR V+ = +5V, V- = -25V 1 +25

-CMR V+ = +25V, V- = -5V 1 +25

V

+A

VOL

-A

VOL

+CMRR ∆V

=0Vand+10V,

OUT

R

=2kΩ

L

V

= 0V and -10V,

OUT

R

=2kΩ

L

=10V,

CM

V+=+5V,V-=-25V, V

=-10V

OUT

-CMRR ∆V

CM

=10V, V+=+25V,V-=-5V, V

=+10V

OUT

+V

-V

OUT1

RL=2kΩ 4+25

Thermal Resistance θ

CerDIPPackage................... 75oC/W 20oC/W

CeramicLCCPackage.............. 65

Package Power Dissipation Limit at +75

CerDIPPackage.................................1.33W

CeramicLCCPackage............................1.54W

Package Power Dissipation Derating Factor Above +75

o

CerDIPPackage.............................13.3mW/

C

CeramicLCCPackage........................15.4mW/

o

C

V

≤ 1/2 (V+ - V-)

INCM

R

≥ 2kΩ

L

= 0V, Unless Otherwise Specified.

OUT

GROUP A

SUBGROUPS TEMPERATURE

o

2, 3 +125

1+25

2, 3 +125

1+25

2, 3 +125

1+25

2, 3 +125

4+25

5, 6 +125

4+25

5, 6 +125

1+25

2, 3 +125

1+25

2, 3 +125

5, 6 +125

C, -55oC -350 350 µV

o

C-200µV

o

C, -55oC-350µV

o

C -50 50 nA

o

C, -55oC -75 75 nA

o

C -50 50 nA

o

C, -55oC -75 75 nA

o

C -50 50 nA

o

C, -55oC -75 75 nA

o

C10-V

o

C, -55oC10 - V

o

C--10V

o

C, -55oC--10V

o

C800-kV/V

o

C, -55oC500 - kV/V

o

C800-kV/V

o

C, -55oC500 - kV/V

o

C100-dB

o

C, -55oC94 - dB

o

C100-dB

o

C, -55oC94 - dB

o

C12-V

o

C, -55oC12 - V

o

C--12V

o

C, -55oC--12V

JA

o

CforTJ≤ +175oC

C/W 15oC/W

LIMITS

θ

JC

o

C

o o

UNITSMIN MAX

C C

Spec Number 511 033- 883

2

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

DeviceTested at: V

SUPPLY

= ±15V,R

SOURCE

=50Ω,R

PARAMETERS SYMBOL CONDITIONS

Output Current +I

Quiescent Power Supply Current

Power Supply

+PSRR ∆V

Rejection Ratio

-I

+I

OUT

-I

OUT

CC

V

OUT

V

OUT

V

CC

OUT

0mA

V

OUT

0mA

SUP

V+=+20V,V-=-15V

=-10V 4 +25oC15-mA

=+10V 4 +25oC--15mA

=0V,I

=10V,

V+=+10V,V-=-15V

-PSRR ∆V

=10V,

SUP

V+=+15V,V-=-20V V+=+15V,V-=-10V

Specifications HA-5134/883

OUT

LOAD

=

=100kΩ,V

GROUP A

SUBGROUPS TEMPERATURE

= 0V, Unless Otherwise Specified.

OUT

5, 6 +125

1+25

2, 3 +125

1+25

2, 3 +125

1+25

2, 3 +125

1+25

2, 3 +125

LIMITS

UNITSMIN MAX

o

C, -55oC8 -mA

o

C, -55oC- -8mA

o

C-6.8mA

o

C, -55oC- 8mA

o

C-6.8mA

o

C, -55oC- 8mA

o

C100-dB

o

C, -55oC94 - dB

o

C100-dB

o

C, -55oC94 - dB

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

DeviceTested at: V

SUPPLY

= ±15V, R

SOURCE

=50Ω,R

LOAD

=2kΩ,C

LOAD

=50pF,A

VCL

GROUP A

PARAMETERS SYMBOL CONDITIONS

SlewRate +SR V

-SR V

Riseand Fall Time t

R

t

F

Overshoot +OS V

-OS V

= -3V to +3V 7 +25oC0.75-V/µs

OUT

=+3Vto-3V 7 +25oC0.75-V/µs

OUT

V

=0to+200mV

OUT

10% ≤ T

R

V

=0to-200mV

OUT

10% ≤ T

F

= 0 to +200mV 7 +25oC-40%

OUT

=0to-200mV 7 +25oC-40%

OUT

≤ 90%

SUBGROUPS TEMPERATURE

7+25

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

DeviceCharacterized at: V

SUPPLY

= ±15V, R

LOAD

=2kΩ,C

= 50pF ,Unless Otherwise Specified.

LOAD

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

Average Offset Voltage Drift

DifferentialInput Resistance

Low Frequency

TC VCM=0V 1 -55oC to +125oC- 2µV/oC

V

IO

E

R

NP-P

VCM=0V 1 +25oC20-MΩ

IN

0.1Hz to 10Hz 1 +25oC-0.25µV

Peak-to-PeakNoise Input Noise Voltage

E

RS=20Ω,fO=1kHz 1 +25oC-10nV/√Hz

N

Density Input Noise Current

Density

I

RS=2MΩ,fO=1kHz 1 +25oC-2pA/√Hz

N

= +1V/V, Unless OtherwiseSpecified.

LIMITS

UNITSMIN MAX

o

C-400ns

o

C-400ns

LIMITS

UNITSMIN MAX

P-P

Spec Number

51 1 033- 883

3

Specifications HA-5134/883

TABLE 3. EL ECTRICAL PERFORMANCE CHARACTERISTICS ( Continued)

DeviceCharacterized at: V

SUPPLY

= ±15V, R

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

Gain Bandwidth Product GBWP VO=200mV,

Unity Bandwidth Product UBWP V SlewRate +SR V

-SR V Full PowerBandwidth FPBW V MinimumClosed Loop

CLSG R

Stable Gain Riseand Fall Time t

R

t

F

Overshoot +OS V

-OS V

Output Resistance R

OUT

Power Consumption PC V

ChannelSeparation (AC) CS (AC) V

ChannelSeparation (DC) CS (DC) V

NOTES:

1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-

etersarelab characterizedupon initial design release, or upon design changes. Theseparameters are guaranteed by characterization basedupon data from multiple productionruns which reflect lottolotandwithin lot variation.

2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV

3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).

4. Measured between 10% and 90% points.

LOAD

=2kΩ,C

= 50pF ,Unless Otherwise Specified.

LOAD

LIMITS

UNITSMIN MAX

o

f

1+25

≥ 100kHz

O

= 200mV 1 +25oC3-MHz

O

=-3Vto+3V 1 +25oCto+125oC0.75 - V/µs

OUT

=+3Vto-3V 1 -55oC0.6-V/µs

OUT

= 10V 1, 2 +25oC12-kHz

PEAK

=2kΩ,CL= 50pF 1 -55oC to +125oC+1 - V/V

L

V

= 0V to +200mV 1, 4 -55oC to +125oC- 400 ns

OUT

V

= 0V to -200mV 1,4 -55oC to +125oC- 400 ns

OUT

= 0V to +200mV 1 -55oC to +125oC- 40 %

OUT

= 0V to -200mV 1 -55oC to +125oC- 40 %

OUT

C3-MHz

Open Loop 1 +25oC-86Ω

=0V,I

OUT

0mA

=1V

IN

f

= 100Hz

O

V

=1V

IN

f

= 10kHz

O

= ±10V (20V

O

∆V

≤ 20µV

IO

P-P

,

OUT

P-P

=

),

1, 3 -55oC to +125oC- 240mW

o

1+25

C120-dB

o

C120-dB

o

C120-dB

).

PEAK

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQ UIREMENTS SUBGROUPS (SEE TABLES 1 AND 2)

Interim Electrical Parameters (Pre Burn-In) 1

Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6, 7

Group A Test Requirements 1, 2, 3, 4, 5, 6, 7

Groups C and D Endpoints 1

NOTE:

1. PDA applies to Subgroup 1 only.

4

Spec Number

51 1 033- 883

Die Characteristics

DIE DIMENSIONS:

91 x 114 x 19 mils ± 1mils 2300 x 2900 x 483µm ± 25.4µm

METALLIZATION:

Type: Al , 1% Cu Thickness: 16k

GLASSIVATION:

Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12k Nitride Thickness: 3.5kÅ ± 1.5kÅ

Å ± 2kÅ

HA-5134/883

WORST CASE CURRENT DENSITY:

2.5 x 10

5

A/cm

2

This device meets Glassivation Integrity Test Requirement per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph 30.5.5.4.

SUBSTRATE POTENTIAL (Powered Up):

Unbiased

TRANSISTOR COUNT: 160 PROCESS: Bipolar Dielectric Isolation

Metallization Mask Layout

HA-5134/883

-IN1 OUT1 OUT4 -IN4

+IN1

V+

+IN4

V-

+IN2

-IN3OUT3OUT2-IN2

+IN3

All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at website www.intersil.com/design/quality/iso.asp

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.

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Spec Number 511 033- 883

5