Datasheet HA-5177-883 Datasheet (Intersil Corporation)

HA-5177/883

July 1994

Ultra Low Offset Voltage Operational Amplifier

Features

• This Circuit is Processed in Accordance to MIL-STD­883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.

• Low Offset Voltage. . . . . . . . . . . . . . . . . . . . .60µV (Max)

10µV (Typ)

0.1µV/

o

C (Max)

o

• Low Offset Voltage Drift . . . . . . . . . . . . 0.6µV/

• High Voltage Gain . . . . . . . . . . . . . . . . . . . .126dB (Min)

150dB (Typ)

• High CMRR. . . . . . . . . . . . . . . . . . . . . . . . . . 110dB (Min)

140dB (Typ)

• High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . .110dB (Min)

135dB (Typ)

• Low Noise. . . . . . . . . . . . . . . . . . . . . . . . 11nV/√

9nV/√

Hz (Max)

Hz (Typ)

• Low Power Consumption . . . . . . . . . . . . . 51mW (Max)

• Wide Gain Bandwidth Product . . . . . . . . . . 2MHz (Min)

• Unity Gain Stable

Applications

• High Gain Instrumentation Amplifiers

• Precision Control Systems

• Precision Integrators

• High Resolution Data Converters

• Precision Threshold Detectors

• Low Level Transducer Amplifiers

C (Typ)

Description

The HA-5177/883 is a monolithic, all bipolar, precision oper­ational amplifier, utilizing Intersil Dielectric Isolation and
advance processing techniques. This design features a
combination of precision input characteristics, wide gain
bandwidth (2MHz) and high speed (0.5V/µs min) and is an
improved version of the HA-5135/883.

The HA-5177/883 uses advanced matching techniques and
laser trimming to produce low offset voltage (10µV typ, 60µV
max) and low offset voltage drift (0.1µV/
max). This design also features low voltage noise (9nV/√
typ), Low current noise (0.32pA/√

o

C typ, 0.6µV/oC

Hz

Hz typ), nanoamp input

currents, and 126dB minimum gain.
These outstanding features along with high CMRR (140dB

typ, 110dB min) and high PSRR (135dB typ, 110dB min)
make this unity gain stable amplifier ideal for high resolution
data acquisition systems, precision integrators, and low level
transducer amplifiers.

Ordering Information

PART

NUMBER

HA2-5177/883 -55oC to +125oC 8 Pin Can

HA7-5177/883 -55oC to +125oC 8 Lead CerDIP

HA4-5177/883 -55oC to +125oC 20 Lead Ceramic LCC

TEMPERATURE

RANGE PACKAGE

Pinouts

HA-5177/883

(CERDIP)

TOP VIEW

BAL 2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

IN-

IN+

1

2

3

V-

4

-

+

BAL1

8

V+

7

OUT

6

NC

5

| Copyright © Intersil Corporation 1999

NC

-IN

NC

+IN

NC

HA-5177/883

(CLCC)

TOP VIEW

BAL 2

NC

NC

3212019
4
5
6
7
8

­+

9101112

V-

NC

NC

3-159

BAL1

13

NC

NC

NC

18

NC
V+

17
16

NC
OUT

15

NC

14

BAL 2

IN -

IN+

2

HA-5177/883

(METAL CAN)

TOP VIEW

BAL1

8

1

-

+

3

4
V-

Spec Number

File Number 3733.1

7

V+

6

OUT

5

NC

511041-883

Specifications HA-5177/883

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 44V

Differential Input Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . 7V

Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-

Input Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA

Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Input Offset Voltage V

Input Bias Current I

Input Offset Current I

Common Mode
Range

Large Signal Voltage
Gain

Common Mode
Rejection Ratio

Output Voltage
Swing

SUPPLY

= ±15V, R

IO

B

SOURCE

= 50Ω, R

= 100kΩ, V

LOAD

VCM = 0V 1 +25oC -60 60 µV

VCM = 0V,
RS = 10kΩ, 50Ω

+I



---------------------------- -



IO

VCM = 0V,

I–

+

B

B

2

+RS = 10kΩ,

-RS = 10kΩ

+CMR V+ = +3V, V- = -27V 1 +25oC12-V

-CMR V+ = +27V, V- = -3V 1 +25oC - -12 V

+A

VOL

V

= 0V and +10V,

OUT

RL = 2kΩ

-A

VOL

V

= 0V and -10V,

OUT

RL = 2kΩ

+CMRR ∆VCM = 10V,

V+ = +5V, V- = - 25V,
V

= -10

OUT

-CMRR ∆VCM = 10V,
V+ = +25V, V- = - 5V,
V

= +10

OUT

+V

-V

+V

-V

OUT1

OUT1

OUT2

OUT2

RL = 2kΩ 4 +25oC12-V

RL = 2kΩ 4 +25oC - -12 V

RL = 600Ω 4 +25oC10-V
RL = 600Ω 4 +25oC - -10 V

Thermal Resistance θ

JA

θ

CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 28oC/W

Ceramic LCC Package . . . . . . . . . . . . . . 65oC/W 15oC/W

Metal Can Package. . . . . . . . . . . . . . . . . 155oC/W 67oC/W

Package Power Dissipation Limit at +75oC for TJ≤ +175oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .870mW

Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W

Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW

Package Power Dissipation Derating Factor Above +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.7mW/oC

Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . .15.4mW/oC

Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC

V

≤ 1/2 (V+ - V-)

INCM

RL≥ 600Ω

= 0V, Unless Otherwise Specified.

OUT

GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

2, 3 +125oC, -55oC -100 100 µV

1 +25oC-66nA

2, 3 +125oC, -55oC-8 8 nA

1 +25oC-66nA

2, 3 +125oC, -55oC-8 8 nA

2, 3 +125oC, -55oC12 - V

2, 3 +125oC, -55oC - -12 V

4 +25oC 126 - dB

5, 6 +125oC, -55oC 120 - dB

4 +25oC 126 - dB

5, 6 +125oC, -55oC 120 - dB

1 +25oC 116 - dB

2, 3 +125oC, -55oC 110 - dB

1 +25oC 116 - dB

2, 3 +125oC, -55oC 110 - dB

5, 6 +125oC, -55oC12 - V

5, 6 +125oC, -55oC - -12 V

JC

3-160

Spec Number 511041-883

Specifications HA-5177/883

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Output Current +I

Quiescent Power
Supply Current

Power Supply
Rejection Ratio

Offset Voltage
Adjustment

NOTES:

1. The input stage has series 500Ω resistors along with back to back diodes. This provides large differential input voltage protection for a
slight increase in noise voltage.

2. This test is for functionality only to assure adjustment through 0V.

SUPPLY

= ±15V, R

SOURCE

= 50Ω, R

= 100kΩ, V

LOAD

OUT

GROUP A

= 0V, Unless Otherwise Specified.

LIMITS

SUBGROUPS TEMPERATURE

V

OUT

= -10V 4 +25oC15-mA

OUT

5, 6 +125oC, -55oC15 - mA

-I

OUT

V

= +10V 4 +25oC - -15 mA

OUT

5, 6 +125oC, -55oC - -15 mA

+I

CC

V

OUT

= 0V, I

= 0mA 1 +25oC - 1.7 mA

OUT

2, 3 +125oC, -55oC - 1.7 mA

-I

CC

V

OUT

= 0V, I

= 0mA 1 +25oC -1.7 - mA

OUT

2, 3 +125oC, -55oC -1.7 - mA

+PSRR ∆V

-PSRR ∆V

= 15V,

SUP

V+ = +5V, V- = - 15V,
V+ = +20V, V- = - 15V

= 15V,

SUP

V+ = +15V, V- = - 5V,
V+ = +15V, V- = - 20V

1 +25oC 110 - dB

2, 3 +125oC, -55oC 110 - dB

1 +25oC 110 - dB

2, 3 +125oC, -55oC 110 - dB

+VIOAdj Note 2 1 +25oC 0.3 - mV

2, 3 +125oC, -55oC 0.3 - mV

-VIOAdj Note 2 1 +25oC - -0.3 mV
2, 3 +125oC, -55oC - -0.3 mV

UNITSMIN MAX

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: V

SUPPLY

= ±15V, R

SOURCE

= 50Ω, R

PARAMETERS SYMBOL CONDITIONS

Slew Rate +SR V

= -3V to +3V,

OUT

VIN S.R. ≤ 25V/µs

-SR V

= +3V to -3V,

OUT

VIN S.R. ≤ 25V/µs

Rise and Fall Time t

V

R

= 0 to +200mV

OUT

10% ≤ TR≤ 90%

t

V

F

= 0 to -200mV

OUT

10% ≤ TF≤ 90%

Overshoot +OS V

-OS V

= 0 to +200mV 7 +25oC - 40 %

OUT

= 0 to -200mV 7 +25oC - 40 %

OUT

LOAD

= 2kΩ, C

LOAD

= 50pF, A

= +1V/V, Unless Otherwise Specified.

VCL

GROUP A

SUBGROUPS TEMPERATURE

7 +25oC 0.5 - V/µs

7 +25oC 0.5 - V/µs

7 +25oC - 420 ns

7 +25oC - 420 ns

LIMITS

UNITSMIN MAX

3-161

Spec Number

511041-883

Specifications HA-5177/883

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Characterized at: V

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

Average Offset Voltage
Drift

Average Offset Current
Drift

Average Bias Current Drift IRTC Versus Temperature 1 -55oC to +125oC - 40 pA/oC
Differential Input

Resistance
Low Frequency

Peak-to-Peak Noise Voltage
Low Frequency

Peak-to-Peak Noise Current
Input Noise Voltage

Density

Input Noise Current
Density

Gain Bandwidth Product GBWP VO= 100mV ,

Full Power Bandwidth FPBW V
Minimum Closed Loop

Stable Gain
Settling Time t
Output Resistance R
Power Consumption PC V

NOTES:

1. Parameters listed in T able 3 are controlled via design or process parameters and are not directly tested at final production. These param­eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.

2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV

3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)

SUPPLY

= ±15V, R

LOAD

= 2kΩ, C

= 50pF, AV = +1V/V, Unless Otherwise Specified.

LOAD

LIMITS

VIOTC VCM = 0V 1 -55oC to +125oC - 0.6 µV/oC

IIOTC Versus Temperature 1 -55oC to +125oC - 40 pA/oC

E

I

R

NP-P

NP-P

E

VCM = 0V 1 +25oC20-MΩ

IN

0.1Hz to 10Hz 1 +25oC - 0.6 µV

0.1Hz to 10Hz 1 +25oC - 45 pA

RS = 20Ω, fO = 10Hz 1 +25oC - 18 nV/√Hz

N

RS = 20Ω, fO = 100Hz 1 +25oC - 13 nV/√Hz
RS = 20Ω, fO = 1kHz 1 +25oC - 11 nV/√Hz

I

RS = 2MΩ, fO = 10Hz 1 +25oC-4pA/√Hz

N

RS = 2MΩ, fO = 100Hz 1 +25oC - 2.3 pA/√Hz
RS = 2MΩ, fO = 1kHz 1 +25oC-1pA/√Hz

1 +25oC 2 - MHz

1Hz ≤ fO≤ 100kHz

= 10V 1, 2 +25oC 8 - kHz

PEAK

CLSG RL = 2kΩ, CL = 50pF 1 -55oC to +125oC +1 - V/V

T o 0.1% for a 10V Step 1 +25oC-15µs

S

OUT

Open Loop 1 +25oC-70Ω

OUT

= 0V, I

= 0mA 1, 3 -55oC to +125oC - 51 mW

OUT

).

PEAK

UNITSMIN MAX

P-P

P-P

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2)

Interim Electrical Parameters (Pre Burn-In) 1

Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6, 7

Group A Test Requirements 1, 2, 3, 4, 5, 6, 7

Groups C and D Endpoints 1

NOTE:

1. PDA applies to Subgroup 1 only.

3-162

Spec Number

511041-883

Die Characteristics

DIE DIMENSIONS:

72 x 103 x 19 mils ± 1 mils
1840 x 2620 x 483µm ± 25.4µm

METALLIZATION:

Type: Al, 1% Cu
Thickness: 16k

Å ± 2kÅ

GLASSIVATION:

Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k

Å ± 2kÅ

Nitride Thickness: 3.5kÅ ± 1.5kÅ

WORST CASE CURRENT DENSITY:

6.0 x 10

4

A/cm

2

SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 71
PROCESS: Bipolar Dielectric Isolation

Metallization Mask Layout

HA-5177/883

HA-5177/883

BAL2

BAL1 V+ OUT NC

V-+IN-IN

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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Spec Number 511041-883

3-163