Datasheet HA-2850 Datasheet (Intersil Corporation)

HA-2850

Data Sheet September 1998 File Number 2844.4

470MHz, Low Power, High Slew Rate
Operational Amplifier

The HA-2850 is a wideband, high slew rate, operational
amplifier featuring superior speed and bandwidth
characteristics. Bipolar construction, coupled with dielectric
isolation, delivers outstanding performance in circuits with a
closed loop gain of 10 or greater.

A 340V/µs slew rate and a 470MHz gain bandwidth product
ensure high performance in video and wideband amplifier
designs. Differential gain and phase are a low 0.04% and

0.04 degrees respectively, making the HA-2850 ideal for
video applications. A full ±10V output swing, high open loop
gain, andoutstanding AC parameters, make the HA-2850 an
excellent choice for high speed Data Acquisition Systems.

For military grade product, refer to the HA-2850/883 data
sheet. Intersil AnswerFAX(321-724-7800) Document #3595.

Pinout

HA-2850

(SOIC)

TOP VIEW

NC

-IN

+IN

1
2

-

+

3
4

V-

8

NC

7

V+

6

OUT

5

NC

Features

• Low Supply Current . . . . . . . . . . . . . . . . . . . . . . . . 7.5mA

• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . 340V/µs

• Open Loop Gain. . . . . . . . . . . . . . . . . . . . . . . . . . 25kV/V

• Wide Gain-Bandwidth (A

≥ 10). . . . . . . . . . . . . . 470MHz

V

• Full Power Bandwidth. . . . . . . . . . . . . . . . . . . . . . 5.4MHz

• Low Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 0.6mV

• Input Noise Voltage . . . . . . . . . . . . . . . . . . . .

11nV/ Hz

• Differential Gain/Phase. . . . . . . . . . . 0.04%/0.04 Degrees

• Lower Power Enhanced Replacement for AD840 and
EL2040

Applications

• Pulse and Video Amplifiers

• Wideband Amplifiers

• High Speed Sample-Hold Circuits

• Fast, Precise D/A Converters

Ordering Information

PART NUMBER

(BRAND)

HA9P2850-5
(H28505)

TEMP.

RANGE (oC) PACKAGE

0 to 75 8 Ld SOIC M8.15

PKG.

NO.

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 1999

HA-2850

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 35V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Operating Conditions

Temperature Range

HA-2850-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC

Recommended Supply Voltage Range . . . . . . . . . . . . ±6V To ±15V

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. θJA is measured with the component mounted on an evaluation PC board in free air.

2. Maximum power dissipation, including output load, must be designed to maintain the maximum junction temperature below 150oC for plastic
packages.

Thermal Resistance (Typical, Note 1) θJA (oC/W)

8 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . 157

Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175oC

Maximum Junction Temperature (Plastic Package, Note 2) . .150oC

Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC

(SOIC - Lead Tips Only)

Electrical Specifications V

PARAMETER TEST CONDITIONS TEMP. (oC)

INPUT CHARACTERISTICS

Offset Voltage (Note 9) 25 - 0.6 2 mV

Average Offset Voltage Drift Full - 20 - µV/oC
Bias Current (Note 9) 25 - 5 14.5 µA

Offset Current 25 - 1 4 µA

Input Resistance 25 - 10 - kΩ
Input Capacitance 25 - 1 - pF
Common Mode Range Full ±10 - - V
Input Noise Voltage (Note 9) f = 1kHz, R
Input Noise Current (Note 9) f = 1kHz, R

TRANSFER CHARACTERISTICS

Large Signal Voltage Gain Note 4 25 20 25 - kV/V

Common-Mode Rejection Ratio (Note 9) VCM = ±10V Full 75 80 - dB
Minimum Stable Gain 25 10 - - V/V
Gain Bandwidth Product (Note 9) VO = 90mV, AV = 100 25 - 470 - MHz

OUTPUT CHARACTERISTICS

Output Voltage Swing (Note 9) Note 4 Full ±10 ±11 - V
Output Current (Note 9) Note 4 Full ±10 ±20 - mA
Output Resistance 25 - 30 - Ω
Full Power Bandwidth (Note 5) Note 4 25 4.8 5.4 - MHz
Differential Gain AV = +10, Note 3 25 - 0.04 - %
Differential Phase AV = +10, Note 3 25 - 0.04 - Degrees
Harmonic Distortion (Note 9) AV = +10, VO = 2V

= ±15V, RL = 1kΩ, CL≤ 10pF, Unless Otherwise Specified

SUPPLY

SOURCE
SOURCE

= 0Ω 25 - 11 ­ = 10kΩ 25 - 6 -

, f = 1MHz 25 - -74 - dBc

P-P

HA-2850-5

UNITSMIN TYP MAX

Full - 2 6 mV

Full - 8 20 µA

Full - - 8 µA

nV Hz⁄

pA Hz⁄

Full 15 20 - kV/V

2

HA-2850

Electrical Specifications V

= ±15V, RL = 1kΩ, CL≤ 10pF, Unless Otherwise Specified (Continued)

SUPPLY

HA-2850-5

PARAMETER TEST CONDITIONS TEMP. (oC)

UNITSMIN TYP MAX

TRANSIENT RESPONSE (Note 6)

Rise Time 25 - 5 - ns
Overshoot 25 - 25 - %
Slew Rate (Notes 8, 9) Note 4 25 300 340 - V/µs
Settling Time 10V Step to 0.1% 25 - 200 - ns

POWER REQUIREMENTS

Supply Current (Note 9) Full - 7.5 8.0 mA
Power Supply Rejection Ratio (Note 9) Note 7 Full 75 90 - dB

NOTES:

3. Differential gain and phase are measured with a VM700A video tester, using a NTC-7 composite VITS.

4. RL = 1kΩ, VO = ±10V, 0V to ±10V for slew rate.
Slew Rate

5. Full Power Bandwidth guaranteed based on slew rate measurement using: .

FPBW

6. Refer to Test Circuit section of data sheet.

7. V

SUPPLY

= ±10V to ±20V.

-------------------------- -

2πV

PEAK

V

PEAK

10V=;=

8. This parameter is not tested. The limits are guaranteed based on lab characterization, and reflect lot-to-lot variation.

9. See “Typical Performance Curves” for more information.

Test Circuits and Waveforms

INPUT

OUTPUT

IN

+

-

900Ω

OUT

NOTES:

10. VS= ±15V.

100Ω

11. AV = +10.

12. CL < 10pF.

TEST CIRCUIT

INPUT

OUTPUT

Input = 1V/Div.

Output = 5V/Div.

50ns/Div.

Input = 10mV/Div.

Output = 100mV/Div.

50ns/Div.

LARGE SIGNAL RESPONSE SMALL SIGNAL RESPONSE

3

Test Circuits and Waveforms (Continued)

V+

0.001µF

INPUT

200Ω

500Ω

-

+

V-

1µF

0.001µF

1µF

2kΩ

PROBE
MONITOR

HA-2850

OUTPUT

NOTES:

13. AV = -10.

14. Load Capacitance should be less than 10pF.

15. Itisrecommendedthatresistorsbe carbon composition and that
feedback and summing network ratios be matched to 0.1%.

16. SETTLINGPOINT(SummingNode) capacitance should be less
than 10pF. For optimum settling time results, it is recommended
that the test circuit be constructed directly onto the device pins.
A Tektronix 568 Sampling Oscilloscope with S-3A sampling
heads is recommended as a settle point monitor.

SETTLING

POINT

5kΩ

SETTLING TIME TEST CIRCUIT

T ypical P erf ormance Curves T

100

80

A

60
40

GAIN (dB)

20

0

1K

= 1000

VCL

A

= 100

VCL

A

= 10

VCL

10K 100K 1M 10M 100M 500M

OPEN LOOP

OPEN LOOP

FREQUENCY (Hz)

A

VCL

A

A

VCL

VCL

= 25oC, V

A

= 1000

= 100

= 10

= ±15V , RL = 1kΩ, CL < 10pF, Unless Otherwise Specified

SUPPLY

475

450

425

0
90
180

PHASE (DEGREES)

GAIN BANDWIDTH PRODUCT (MHz)

400

56789101112131415

SUPPLY VOLTAGE (±V)

FIGURE 1. FREQUENCY RESPONSE FOR VARIOUS GAINS FIGURE 2. GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE

600

550

500

450

400
350

PRODUCT (MHz)

GAIN BANDWIDTH

300
250

200

-60 -40 -20 0 20 40 60 80 100 120 140

o

TEMPERATURE (

C)

90

80

70

60

50

CMRR (dB)

40

30

20

100 10K 100K 1M 10M

1K

FREQUENCY (Hz)

FIGURE 3. GAIN BANDWIDTH PRODUCT vs TEMPERATURE

4

FIGURE 4. CMRR vs FREQUENCY

HA-2850

T ypical P erf ormance Curves T

110

100

90
80

70
60

50

PSRR (dB)

40
30
20

10

0

100 10K 100K 1M 10M

±PSRR

1K

FREQUENCY (Hz)

= 25oC, V

A

FIGURE 5. PSRR vs FREQUENCY FIGURE 6. INPUT NOISE vs FREQUENCY

350

325

= ±15V , RL = 1kΩ, CL < 10pF, Unless Otherwise Specified (Continued)

SUPPLY

60

50

40

30

20

NOISE VOLTAGE (nV/√Hz)

10

0

10 100 1K 10K 100K

350

325

NOISE CURRENT

NOISE VOLTAGE

FREQUENCY (Hz)

60

50

40

30

20

NOISE CURRENT (pA/√Hz)

10

0

300

275

SLEW RATE (V/µs)

250

225

-60 -40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (

o

C)

FIGURE 7. SLEW RATE vs TEMPERATURE FIGURE 8. SLEW RATE vs SUPPLY VOLTAGE

6.5

6.0

5.5

BIAS CURRENT

5.0

4.5

INPUT BIAS CURRENT (µA)

4.0

-60 -40 -20 0 20 40 60 80 100 120 140

OFFSET VOLTAGE

TEMPERATURE (oC)

3.5

2.5

1.5

0.5

-0.5

INPUT OFFSET VOLTAGE (mV)

300

275

SLEW RATE (V/µs)

250

225

56789101112131415

SUPPLY VOLTAGE (±V)

8.0

7.5

7.0

6.5

6.0

SUPPLY CURRENT (mA)

5.5

5.0

125oC

25oC

o

-55

C

5 6 7 8 9101112131415

SUPPLY VOLTAGE (±V)

FIGURE 9. INPUT OFFSET VOLTAGE AND INPUT BIAS

CURRENT vs TEMPERATURE

5

FIGURE 10. SUPPLY CURRENT vs SUPPLY VOLTAGE

HA-2850

T ypical P erf ormance Curves T

13

11

POSITIVE OUTPUT SWING (V)

±15V, 1kΩ

±15V, 150Ω

9

±15V, 75Ω

7

±8V, 1kΩ

5

±8V, 150Ω

3

-60 -40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (

o

C)

= 25oC, V

A

±8V, 75Ω

= ±15V , RL = 1kΩ, CL < 10pF, Unless Otherwise Specified (Continued)

SUPPLY

-3

±8V, 75Ω

-5

±8V, 1kΩ

-7

±15V, 75Ω

-9

-11

NEGATIVE OUTPUT SWING (V)

-13

±15V, 150Ω

±15V, 1kΩ

-60 -40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (

o

C)

±8V, 150Ω

FIGURE 11. POSITIVE OUTPUT SWING vs TEMPERATURE FIGURE 12. NEGATIVE OUTPUT SWING vs TEMPERATURE

30

)

P-P

25

20

15

10

OUTPUT VOLTAGE SWING (V

V

= ±15V

SUPPLY

V

= ±8V

SUPPLY

5

0

1K 10K 100K 1M 10M 100M

FREQUENCY (Hz)

-30

-40

-50
= 10V

V

O

-60

THD (dBc)

-70

-80

-90

100K 1M 10M

VO = 2V

P-P

P-P

FREQUENCY (Hz)

VO = 0.5V

VO = 1V

P-P

P-P

FIGURE 13. MAXIMUM UNDISTORTED OUTPUT SWING vs

FREQUENCY

-30

-40

-50

-60

-70

-80

3RD INTERMOD PRODUCT (dBc)

-90
500K 1M 10M

FIGURE 15. INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE)

6

FIGURE 14. TOTAL HARMONIC DISTORTION vs FREQUENCY

VO = 5V

P-P

VO = 2V

P-P

VO = 1V

P-P

FREQUENCY (Hz)

VO = 0.25V

VO = 0.5V

P-P

P-P

Die Characteristics

HA-2850

DIE DIMENSIONS:

65 mils x 52 mils x 19 mils
1650µm x 1310µm x 483µm

METALLIZATION:

Type: Aluminum, 1% Copper
Thickness: 16k

Å ±2kÅ

SUBSTRATE POTENTIAL

V-

Metallization Mask Layout

HA-2850

PASSIVATION:

Type: Nitride over Silox
Silox Thickness: 12k

Å ±2kÅ

Nitride Thickness: 3.5kÅ ±1kÅ

TRANSISTOR COUNT:

34

PROCESS:

High Frequency Bipolar Dielectric Isolation

V+

OUT

-IN

+IN

V-

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Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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