Datasheet G7096-01, G7096, G4176-01, G4176 Datasheet (HAMAMATSU)

ULTRAFAST MSM PHOTODETECTORS

p

G4176 SERIES (GaAs)

PRELIMINARY DATA

Ultrafast response of several tens picosecond

FEATURES

Ultrafast response
G4176 : tr , tf = 30 ps (Typ.)
G7096 : t
Low dark current
G4176 : 100 pA (Ta=25
Large photosensitive area
200 µm

APPLICATIONS

Optical high-speed waveform measurements
Optical communications

= 40 ps (Typ.)

r

°C)

G7096 SERIES (InGaAs)

G4176
G7096

G4176-01
G7096-01

DESCRIPTION

HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses.
The GaAs MSM Photodetector G4176 features 30ps response time for both rise & fall while keeping a low dark
current (100pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096 is 40ps.
Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than
other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM
Photodetectors are suited for measurements of optical high-speed waveform and optical communications.
There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and
the polarity of an output signal depends on its connection.
Two kinds of packages are prepared for each MSM Photodetector. The package of G4176 & G7096 is a coaxial
metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G4176­01 & G7096-01 is a TO-18, which is very common.
An optical fiber or connector input types are available as a custom option. Contact your local representative for
more information.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

ecifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.

S

ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs)

,

G4176 SERIES

G7096 SERIES (InGaAs)

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Item

Maximum Bias Voltage

Maximum Light Input

Pulsed Light

CW to Pulsed Light

Operating Temperature

Storage Temperature

Symbol

V

b

Φ

T

op(a)

T

stg

Condition

Pulse width

Pulse width

1ns

1ns

Value

10

50

5

-40 to +85

-40 to +100

GENERAL CHARACTERISTICS (Ta=25°C)

Item

Spectral Response Range

Peak Response Wavelength

Effective Sensitive Area

Symbol

λ

λ

p

A

Condition

V

= 7 V

b

V

= 7 V

b

Chip Size

Package

G4176

G4176-01

Figure 1: Optical Pulse Response

G4176

(Including time response of light source, bias-tee and oscilloscope)

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Output (arb. unit)

0.3

0.2

0.1

0

Value

450 to 870

850

0.2 0.2

1 1

TO-5

(Unified with SMA connector)

TO-18

(Vb = 7 V)

Unit

V

mW

mW

°C

°C

Unit

nm

nm

mm

mm

ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=7V)

Radiant sensitivity

Dark Current

*

NEP

G4176

G4176-01

Terminal Capacitance

G4176

G4176-01

Rise Time

G4176

2

G4176-01

2

Fall Time

G4176

G4176-01

*Noise Equivalent Power
**Value on Chip

G4176-01

(Including time response of light source, assembly circuit and oscilloscope)

Output (arb. unit)

Item

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

Symbol

**

S

I

d

C

t

t

r

t

f

Condition

λ = 850 nm

λ = 850 nm

10 to 90 %

90 to 10 %

0.2 X 10

0.2 X 10

Min.

0.2

-

-

-

-

-

-

-

-15

-15

Value

Typ.

0.3

100

3 X 10

4 X 10

0.3

0.5

30

50

30

50

-15

-15

Max.

-

300

-

-

0.4

0.6

40

80

40

80

Unit

A/W

pA

W/Hz

pF

ps

ps

1/2

(Vb = 7 V)

Time (0.1ns/

Figure 2: Spectral Response

0

10

-1

10

-2

10

Radiant Sensitivity (A/W)

-3

10

500300 900700600400 1000800

div

)

(Vb = 7 V)

Time (0.1ns/

div

)

G7096 SERIES

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Item

Maximum Bias Voltage

Maximum Light Input

Pulsed Light

CW to Pulsed Light

Operating Temperature

Storage Temperature

Symbol

V

b

Φ

T

op(a)

T

stg

Condition

Pulse width

Pulse width

1ns

1ns

Value

15

10

2

-40 to +85

-40 to +100

GENERAL CHARACTERISTICS (Ta=25°C)

Item

Spectral Response Range

Peak Response Wavelength

Effective Sensitive Area

Chip Size

Package

G7096

G7096-01

Figure 3: Optical Pulse Response

G7096

(Including time response of light source, bias-tee and oscilloscope)

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Output (arb. unit)

0.3

0.2

0.1

0

Symbol

λ

λ

p

A

Condition

V

= 10 V

b

= 10 V

V

b

Value

850 to 1650

1500

0.2 0.2

1 1

TO-5

(Unified with SMA connector)

TO-18

(Vb = 10 V)

Unit

V

mW

mW

°C

°C

Unit

nm

nm

mm

mm

ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=10V)

Radiant sensitivity

Dark Current

*

NEP

G7096

G7096-01

Terminal Capacitance

G7096

G7096-01

Rise Time

G7096

2

G7096-01

2

Fall Time

G7096

G7096-01

*Noise Equivalent Power
**Value on Chip

G7096-01

(Including time response of light source, assembly circuit and oscilloscope)

Output (arb. unit)

Item

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

Symbol

**

S

I

d

C

t

t

t

r

f

Condition

λ = 1.3 µm

µm

λ = 1.3

10 to 90 %

90 to 10 %

0.2 X 10

0.2 X 10

Min.

0.2

-

-

-

-

-

-

-

-10

-10

Value

Typ.

0.4

5

2 X 10

3 X 10

0.7

0.9

40

80

120

160

-10

-10

Max.

-

20

-

-

0.8

1.0

60

100

160

200

Unit

A/W

µA

W/Hz

pF

ps

ps

1/2

(Vb = 10 V)

Time (0.1ns/

Figure 4: Spectral Response

0

10

-1

10

-2

10

Radiant Sensitivity (A/W)

-3

10

0.6

0.8

1.0

1.2

div

)

1.4

(Vb = 10 V)

1.6

1.8

Time (0.1ns/

div

)

ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs)

,

CONNECTION EXAMPLES

G7096 SERIES (InGaAs)

G4176

G7096

Optical Input

BIAS-TEE

G4176

(G7096)

BIAS

CASE

Power Supply

+ (or -)

- (or +)

DIMENSIONAL OUTLINES (Unit : mm)

G4176

G7096

Electric Output

Optical Input

G4176-01

(G7096-01)

G4176-01

G7096-01

G4176-01

G7096-01

100 Ω

BIAS

10 kΩ

Output

Case Lead

Electric Output

Coaxial Connector

10 nF

Power Supply

- (or +)
+ (or -)

CHIP

SENSITIVE
SURFACE

2.3

1/4-36UNS-2B

10

φ8.2

φ7.9

(BOTTOM VIEW)

9.6

2.03.0

CASE

OUTPUT/BIAS

*

Both polarities of the bias voltage are available.

*

CHIP

SENSITIVE
SURFACE

φ0.45LEAD

φ5.4

φ4.7

(BOTTOM VIEW)

1.2

12 min. 3.6

BIAS / OUTPUT

OUTPUT / BIAS

CASE

*
*

http://www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept.
5000, Hirakuchi, Hamakita City, Shizuoka, 434-8601, Japan, Telephone: [phone], Fax: [phone], E-mail: [e-mail]

U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: [phone], Fax: [phone] E-mail: [e-mail]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone], E-mail: [e-mail]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone], E-mail: [e-mail]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone], E-mail: [e-mail]
North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: [phone], Fax: [phone], E-mail: [e-mail]

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Cat. No. LPRD1022E01