Datasheet FQD13N06LTM Specification

FQD13N06L / FQU13N06L

N-Channel QFET® MOSFET

60 V, 11 A, 115 mΩ

FQD13N06L / FQU13N06L — N-Channel QFET

October 2013

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

D

G

S

Absolute Maximum Ratings T

Symbol Parameter

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

, T

T

J

STG

T

L

Drain-Source Voltage 60 V

Drain Current

Drain Current - Pulsed Gate-Source Voltage ± 20 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *

Power Dissipation (T

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds

D-PAK

- Continuous (T

= 25°C)

C

- Derate above 25°C 0.22 W/°C

G

D

S

= 25oC unless otherwise noted.

C

= 25°C)

C

= 100°C)

C

Features

11 A, 60 V, R

• ID = 5.5 A

Low Gate Charge (Typ. 4.8 nC)

•

Low Crss (Typ. 17 pF)

•

• 100% Avalanche Tested

Low Level Gate Drive Requirements Allowing

• Direct Operation form Logic Drivers

I-PAK

FQD13N06LTM / FQU13N06LTU

(Note 1)

(Note 2)

(Note 1)

(Note 3)

= 115 mΩ (Max) @ VGS = 10 V,

DS(on)

D

G

S

FQU13N06LTU_WS

11 A

44 A

90 mJ

11 A

2.8 mJ

7.0 V/ns

2.5 W

28 W

300 °C

Unit

A7

®

MOSFET

Thermal Characteristics

Symbol Parameter

R

Thermal Resistance, Junction to Case, Max.

JC

Thermal Resistance, J

JA

Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.

unction to Ambi

Minimum Pad of 2-oz Copper), Max.

ent (

1

FQD13N06LTM FQU13N06LTU

FQU13N06LTU_WS

4.5

110

50

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Unit

o

C/W

Package Marking and Ordering Information

Part Number Top Mark

FQD13N06LFQD13N06LTM D-PAK 330 mm 16 mm

FQU13N06LTU

FQU13N06LTU_WS

FQU13N06L

FQU13N06LS

Package Reel Size Tape Width Quantity

Packing Method

Tape and Reel

I-PAK N/A N/A

Tube

FQD13N06L / FQU13N06L — N-Channel QFET

2500 units

70 units

75 units

Electrical Characteristics T

= 25oC unless otherwise noted.

C

Symbol Parameter Test Conditions Min Typ Max Unit

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 60 V, VGS = 0 V

DS

= 48 V, TC = 150°C

V

DS

V

= 20 V, VDS = 0 V

GS

V

= -20 V, VDS = 0 V

GS

60 -- -- V

-- 0.05 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 5.5 A

GS

= 5 V, ID = 5.5 A

V

GS

= 25 V, ID = 5.5 A

V

DS

1.0 -- 2.5 V

----0.092

0.115

0.145

-- 6 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 95 125 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 270 350 pF

Reverse Transfer Capacitance -- 17 23 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 90 190 ns

Turn-Off Delay Time -- 20 50 ns

Turn-Off Fall Time -- 40 90 ns

Total Gate Charge

Gate-Source Charge -- 1.6 -- nC

Gate-Drain Charge -- 2.7 -- nC

V

= 30 V, ID = 6.8 A,

DD

R

= 25 Ω

G

= 48 V, ID = 13.6 A,

V

DS

V

= 5 V

GS

(N

(Note 4)

ote 4)

-- 8 25 ns

-- 4.8 6.4 nC

®

Ω

MOSFET

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr



1. Repetitive rating : pulse-width limited by maximum junction temperature.

2. L = 870 µH, IAS = 11 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25oC.

3. ISD ≤ 13.6 A, di/dt ≤ 300 A/μs, VDD ≤ BV Ess

4.

Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 44 A

V

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 45 -- nC

, starting TJ = 25oC.

entially independent of operating temperature.

DSS

= 0 V, IS = 11 A

GS

= 0 V, IS = 13.6 A,

V

GS

dI

/ dt = 100 A/µs

F

2

-- -- 1.5 V

-- 45 -- ns

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V

GS

Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V

1

10

Bottom : 3.0 V

, Drai n Current [A]

D

I

0

10

-1

10

VDS, Drai n-Source Voltage [V]

※

Notes :

1. 250μs Pulse Test

2. T

0

10

= 25

C

FQD13N06L / FQU13N06L — N-Channel QFET

1

10

0

10

℃

150

, Drai n Current [ A]

D

I

℃

25

℃

-1

1

10

0246810

℃

-55

V

, Gate- Source Voltage [ V]

GS

※

Not es :

1. V

= 25V

DS

2. 250μs Pulse Test

Figure 1. On-Region Characteristics

300

],

Ω

[m

R

200

DS(ON)

100

Drain-Source On-Resist ance

0

VGS = 5V

VGS = 10V

※

Note : T

= 25

J

0 01 203040

ID, Drain Current [A]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

800

600

C

oss

C

400

Capacit ance [pF]

200

0

-1

10

iss

C

rss

0

10

VDS, Drai n-Source Volt age [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= C + C

ds

oss

gd

C

=

gd

rss

※

Notes :

1. V

GS

2. f = 1 MHz

1

10

= 0 V

Figure 2. Transfer Characteristics

®

MOSFET

1

10

0

10

, Reverse Drain Current [A]

DR

℃

I

-1

10

0.2 0.4 0. 6 0.8 1.0 1.2 1.4 1. 6

℃

150

℃

25

※

Not es :

1. V

= 0V

GS

2. 250μs Pulse Test

VSD, Source-Drai n voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

20 64 810

VDS = 30V

VDS = 48V

QG, Total Gate Charge [nC]

※

Note : I

= 13.6A

D

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FQD13N06L / FQU13N06L Rev. C3

3

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FQD13N06L / FQU13N06L — N-Channel QFET

1.2

1.1

1.0

, (Normali zed)

DSS

BV

0.9

Drain-Sour ce Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

※

Notes :

1. VGS = 0 V

2. ID = 250 μA

TJ, Juncti on Temperat ure [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

-1

10

Operati on in Thi s Area is Limi ted by R

DS(on)

10 ms

DC

※

Notes :

1. T

= 25 oC

C

2. T

= 150 oC

J

3. Singl e Pulse

0

10

1

10

VDS, Drain-Source Voltage [V]

100 µs

1 ms

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain- Source On-Resist ance

0.0

-100 -50 0 50 100 150 200

※

Notes :

= 10 V

1. V

GS

= 5.5 A

2. I

D

TJ, Junct ion Temperatur e [oC]

Figure 8. On-Resistance Variation

vs. Temperature

12

10

8

6

4

, Drain Curre nt [A]

D

I

2

10

0

25 50 75 100 125 150

TC, Case Temperature [℃]

®

MOSFET

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

C/W]

o

(t), Thermal Response [

Z

D=0.5

0

10

0.2

0.1

0.05

0.02

0.01

-1

10

JC

-5

10

vs. Case Temperature

※

Notes :

=(t) 4.5 ℃/W Ma x.

1 . Z

θ

JC

2 . D ut y Fa c to r, D= t 3 . TJM - TC = PDM Z*

P

DM

t

sin gle p u lse

-4

10

-3

10

t 1 , Rectangular P

-2

10

-1

10

ulse D uration [sec]

1

t

2

10

Figure 11. Transient Thermal Response Curve

4

1/t2

(t)

θ

JC

0

1

10

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12V

200nF

IG = const.

3mA

V

GS

DS

GS

10V

Q

gs

50KΩ

V

GS

300nF

Same Type

as DUT

DUT

V

Figure 12. Gate Charge Test Circuit & Waveform

Q

g

Q

gd

Charge

FQD13N06L / FQU13N06L — N-Channel QFET

®

MOSFET

V

10V

GS

V

10V

GS

R

L

DUT

L

V

DD

hing Test

L

LL

V

DD

V

DS

V

GS

R

G

F

igure 13. Resistive Switc

V

DS

I

IDI

D

R

G

t

p

BV

V

DS

10%

V

GS

Circuit

E

DSS

I

AS

DD

90%

t

d(on)tr

t

on

& Waveforms

1

----

=LI

AS

2

I

2

--------------------

-------------------BV

BV

(t)

D

t

p

t

d(off )

t

BV

DSS

DSS-VDD

t

f

off

Time

V

(t)

V

(t)

DS

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

FQD13N06L / FQU13N06L Rev. C3

5

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FQD13N06L / FQU13N06L — N-Channel QFET

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

V

DD

G

®

MOSFET

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

F

igure 15. Pe

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

ak Diode Recovery dv/dt

I

RM

Test Circuit &

di/dt

Waveforms

10V

V

DD

6

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Mechanical Dimensions

FQD13N06L / FQU13N06L — N-Channel QFET

®

MOSFET

Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003

FQD13N06L / FQU13N06L Rev. C3

7

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Mechanical Dimensions

FQU13N06LTU

FQD13N06L / FQU13N06L — N-Channel QFET

®

MOSFET

Figure 17. TO251 (I-PAK), Molded, 3-Lead

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003

FQD13N06L / FQU13N06L Rev. C3

8

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Mechanical Dimensions

FQU13N06LTU_WS

FQD13N06L / FQU13N06L — N-Channel QFET

®

MOSFET

Figure 18. TO-251 (I-PAK), Molded, 3-Lead, Option AA

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT251-003

FQD13N06L / FQU13N06L Rev. C3

9

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®

™

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™

®

AX-CAP BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FPS™

*

®

® ®

F-PFS™

®

FRFET Global Power Resource GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™

®

MicroPak2™ MillerDrive™ MotionMax™ mWSaver OptoHiT™ OPTOLOGIC OPTOPLANAR

®

SM

®

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™

®

RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™

®

SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS

®

SyncFET™

Sync-Lock™

®*

TinyBoost TinyBuck TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT SerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™

®

XS™

®

*

FQD13N06L / FQU13N06L — N-Channel QFET

®

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used here in:

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.

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Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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