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FQD16N25C 250V N-Channel MOSFET
FQD16N25C
250V N-Channel MOSFET
Features
• 16A, 250V, R
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 68 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
= 0.27Ω @VGS = 10 V
DS(on)
D-PAK
FQD Series
January 2009
QFET
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
G
S
®
Absolute Maximum Ratings
Symbol Parameter FQD16N25C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
, T
J
STG
T
L
Drain-Source Voltage 250 V
Drain Current - Continuous (TC = 25°C) 16 A
- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C) 160 W
- Derate above 25°C 1.28 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 100°C) 10.1 A
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
64 A
432 mJ
16 A
160 mJ
5.5 V/ns
300 °C
Thermal Characteristics
Symbol Parameter FQD16N25C Units
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case 0.78 °C/W
Thermal Resistance, Junction-to-Ambient 110 °C/W
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQD16N25C Rev. A1
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQD16N25C FQD16N25CTM D-PAK 380mm 16mm 2,500
FQD16N25C FQD16N25CTF D-PAK 380mm 16mm 2,000
FQD16N25C 250V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.7mH, IAS = 16A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 16A, di/dt ≤300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 250 -- -- V
/
DSS
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.31 -- V/°C
Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 µA
V
= 200 V, TC = 125°C -- -- 100 µA
DS
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
Static Drain-Source On-Resistance VGS = 10 V, ID = 8A -- 0.22 0.27 Ω
Forward Transconductance VDS = 40 V, ID =8 A (Note 4) -- 10.5 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 170 220 pF
Reverse Transfer Capacitance -- 68 89 pF
f = 1.0 MHz
Turn-O n Delay Time VDD = 125 V, ID = 16A,
R
= 25 Ω
Turn-O n Rise Time --
Turn-Off Delay Time --
G
(Note 4, 5)
Turn-Off Fall Time --
Total Gate Charge VDS = 200 V, ID = 16A,
= 10 V
V
Gate-Source Charge --
Gate-Drain Charge --
GS
(Note 4, 5)
-- 830 1080 pF
--
15 40
130 270
135 280
105 220
--
41 53.5
5.6
22.7
-- nC
-- nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 16 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 64 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 16 A -- -- 1.5 V
Reverse Recovery Time VGS = 0 V, IS = 16 A,
/ dt = 100 A/µs (Note 4)
dI
Reverse Recovery Charge -- 2.47 --
Starting TJ = 25°C
DSS,
F
-- 260 -- ns
ns
ns
ns
ns
nC
µC
FQD16N25C Rev. A1
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FQD16N25C 250V N-Channel MOSFET
-55oC
Notes :※
1. VDS = 40V
2. 250µ s Pulse Test
10
10
, Drain Current [A]
D
I
-1
10
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
1
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
-1
10
GS
0
10
VDS, Drain-Source Voltage [V]
Notes :※
1. 250µ s Pulse Test
= 25℃
2. T
C
1
10
1
10
150oC
25oC
0
10
, Drain Current [A]
D
I
-1
10
246810
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
1.5
1.0
[Ω ],
DS(ON)
R
0.5
VGS = 10V
VGS = 20V
Drain-Source On-Resistance
Note : T※J = 25℃
0.0
0 1020304050
ID, Drai n Cur rent [A]
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
150℃
VSD, Source-Drain voltage [V]
25℃
Notes :※
1. VGS = 0V
2. 250µ s Pulse Tes t
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
3000
2500
2000
1500
1000
Capacitance [pF]
500
FQD16N25C Rev. A1
0
10
Notes :※
1. VGS = 0 V
2. f = 1 MHz
-1
C
C
C
C
iss
C
oss
C
rss
0
10
VDS, Drain- Source Voltage [ V]
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
oss
gd
= C
rss
gd
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 1020304050
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
VDS = 50V
VDS = 125V
VDS = 200V
Note : I※D = 15.6A
Page 4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
FQD16N25C 250V N-Channel MOSFET
1.2
1.1
1.0
, (Normalized)
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
Notes :※
1. VGS = 0 V
2. I
TJ, Junct ion Temperature [oC]
= 250 µ A
D
3.0
2.5
2.0
1.5
, (Normalized)
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junct ion Temperat ure [oC]
Notes :※
1. VGS = 10 V
2. I
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
2
10
1
10
0
10
, Drain Current [A]
D
I
-1
10
0
10
Operation in This Area
is Limited by R
DS(on)
10ms
100ms
DC
* Notes :
1. T
= 25 oC
C
= 150 oC
2. T
J
3. Single Pulse
1
10
VDS, Drain-SourceVoltage[V]
1ms
20
µs
10
µs
100
2
10
15
10
, Drain Current [A]
D
I
5
0
25 50 75 100 125 150
TC, Case Temperature [oC]
= 8.9 A
D
Figure 11. Transient Thermal Response Curve
0
10
D=0.5
0.2
-1
10
0.1
0.05
0.02
0.01
-2
10
(t), Thermal Response
?JC
Z
-5
10
FQD16N25C Rev. A1
10
P
DM
* Notes :
1. Z
single pulse
-4
-3
10
-2
10
?JC
2. Duty Factor, D=t
3. TJM - TC = PDM * Z
-1
10
t1, Square Wave Pulse Duration [sec]
4 www.fairchildsemi.com
t
1
t
2
(t) = 0.78 0C/W Max.
1/t2
(t)
?JC
0
10
1
10
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FQD16N25C 250V N-Channel MOSFET
FQD16N25C Rev. A1
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQD16N25C 250V N-Channel MOSFET
FQD16N25C Rev. A1
6 www.fairchildsemi.com
Page 7
Mechanical Dimensions
TO-252 (DPAK) (FS PKG Code 36)
FQD16N25C 250V N-Channel MOSFET
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
FQD16N25C Rev. A1
7 www.fairchildsemi.com
Page 8
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Rev. I37
FQD16N25C Rev. A1
www.fairchildsemin.com
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