Datasheet FPNH10 Datasheet (Fairchild Semiconductor)

FPNH10

g

FPNH10

C

B

E

TO-92

NPN RF Transistor

This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 µA to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

st

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitt er Vol t age 25 V
Collector-Base Voltage 30 V
Emitter-Base Voltage 3.0 V
Collector Current - Continuous 50 mA
Operating and Stora ge Junction Temperature Range -55 to +150

°

C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

FPNH10

P

D

R

θ

JC

R

θ

JA

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2000 Fairchild Semiconductor Corporation FPNH10 Rev. A

Total Device Dissipation

Derate above 25°C

350

2.8

Thermal Resistance, Junction to Case 125
Thermal Resistance, Junc tion to Ambient 357

mW

mW/°C

°

C/W

°

C/W

(BR)

(BR)

(BR)

NPN RF Transistor

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

CEO

V

CBO

V

EBO

I

CBO

I

EBO

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

BE(on)

SMALL SIGNAL CHARACTERISTICS

f

T

C

cb

C

rb

rb’C

c

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 25 V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage

I

= 100 µA, IE = 0

C

I

= 10 µA, IC = 0

E

30 V

3.0 V
Collector Cutoff Current VCB = 25 V, IE = 0 100 nA
Emitter Cutoff Current VEB = 2.0 V, I

= 0 100 nA

C

DC Current Gain IC = 4.0 mA, VCE = 10 V 60
Collector-Emitter Saturation Voltage IC = 4.0 mA, IB = 0.4 mA 0.5 V

)

Base-Emitter On Voltage IC = 4.0 mA, VCE = 10 V 0.95 V

Current Gain - Bandwidth Product IC = 4.0 mA , VCE = 10 V,
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MH z 0.720 pF

Common-Base Feedback
Capacitance

Collector Base Time Constant IC = 4.0 mA , VCB = 10 V,

f = 100 MHz

VCB = 10 V, IE = 0, f = 1.0 MH z 0.34 0.65 pF

f = 31.8 MHz

650 MHz

9.0 ps

FPNH10

Spice Model

NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)

Typical Characteristics

C

FPNH10

NPN RF Transistor

(continued)

Typical Pulsed Current Gain

vs Collector Current

100

Vce = 5V

80

60

40

20

FE

h - TYPICAL PULSED CURRENT GAIN

125 °C

25 °C

- 40 °C

0

0.1 0.2 0.5 1 2 5 10 20 50

I - COLLECTOR CURRENT (mA)

C

Base-Emitter Saturation

Voltage vs Collector Current

1

β

= 10

0.9

0.8

0.7

0.6

0.5

0.4

0.3

BESAT

V - BASE-EMITTER VOLTAGE (V)

0.1 1 10 20

- 40 °C
25 °C

125 °C

I - COLLECTOR CURRENT (mA)

C

Collector-Emitter Saturation

Voltage vs Collector Current

0.2

β

= 10

125 °C

25 °C

- 40 °C

0.1 1 10 20

I - COLLECTOR CURRENT (mA)

- COLLECTOR-EMITTER VOLTAGE (V)

0.15

0.1

0.05

CESAT

Base-Emitter ON Voltage vs

Collector Current

1

V = 5V

CE

0.8

0.6

0.4

0.2

0.01 0.1 1 10 100

BE(ON)

V - BASE-EMITTER ON VOLTAGE (V)

- 40 °C

I - COLLECTOR CURRE N T (mA)

C

25 °C

125 °C

Collector-Cutoff Current

vs Ambient Temperature

10

V = 30V

CB

1

CBO

0.1

I - COLLECTOR CURRENT (nA)

25 50 75 100 125 150

T - AMBIENT TEMPERATURE ( C)

A

°

350
300
250
200
150
100

50

D

P - PO W E R DI SS IPATI O N (W )

0

0 25 50 75 100 125 150

Pow e r Dissipation

vs. Ambi ent Tem pe rature

TO-92

T - TE MP E RATUR E ( C)

A

o

Common Base Y Parameters vs. Frequency

FPNH10

NPN RF Transistor

(continued)

Input Admittance

120

80

40

V = 10V

CE

I = 5 mA

C

0

-40

b

-80

ib

Y - INPUT ADMITTANCE (mmhos)

-120
100 200 500 1000

ib

f - FREQUENCY (MHz)

g

ib

Forward Transfer Admittance

120

b

80

40

0

-40

-80

fb

-120

Y - FORWARD ADMITTANCE (mmhos)

100 200 500 1000

fb

g

fb

f - FREQUENCY (MH z)

V = 10V

CE

I = 5 mA

C

Output Admittance

12

V = 10V

CE

10

I = 5 mA

C

8

6

4

2

ob

0

Y - OUTPUT ADMITTANCE (mmhos)

100 200 500 1000

f - FREQUENCY (MHz)

b

ob

g

ob

Reverse Transfer Admittance

8

V = 10V

CE

I = 5 mA

C

6

4

-b

rb

2

-g

rb

0

Y - REVERSE ADMITTANCE (mmhos)

100 200 500 1000

f - FREQUENCY (MHz)

rb

Common Emitter Y Parameters vs. Frequency

FPNH10

NPN RF Transistor

(continued)

Input Admittance

24

V = 10V

CE

20

I = 2 mA

C

16

12

8

4

ie

Y - INPUT A DMITT ANCE (mmhos)

0

100 200 500 1000

f - FREQUENCY (MHz)

g

ie

b

ie

Forward Transfer Admittance

60

40

20

-20

g

fe

0

V = 10V

CE

I = 2 mA

C

Output Admittance

6

V = 10V

CE

5

I = 2 mA

C

4

b

3

2

1

oe

0

Y - OUTPUT ADMITTANCE (mmhos)

100 200 500 1000

f - FREQUENCY (MHz)

oe

g

oe

Reverse Transfer Admittance

1.2

V = 10V

CE

1

I = 2 mA

C

0.8

0.6

0.4

-b

re

-40

fe

-60

Y - FORWARD ADMITTANCE (mmhos)

100 200 500 1000

b

fe

f - FREQUENCY (MHz)

0.2

0

re

Y - REVERSE ADMITTA NCE (mmhos)

100 200 500 1000

-g

re

f - FREQUENCY (MHz)

Test Circuits

FPNH10

NPN RF Transistor

(continued)

Input
50

ΩΩ

2.0 K

Ω 10 K

ΩΩ

1000 pF

T1

1000 pF

ΩΩ

Ω

ΩΩ

V

L1

1000 pF

BB

5.0-18 pF

0.8-10 pF

2.0 pF

ΩΩ

Ω

ΩΩ

L2

TUM

1000 pF

680

ΩΩ

Ω

ΩΩ

V

1000 pF

100 pF

0.8-10 pF

CC

FIGURE 1: Neutralized 200 MHz pF and NF Circuit

= 12 V

L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
T1 - Pri. 1 turn No. 16 wire
Sec. 1 turn No. 18 wire

50 pF

(NOTE 2)

RFC

1000 pF

ΩΩ

2.2 K

Ω

ΩΩ

- V

ee

(NOTE 1)

RFC

V

CC

175 pF

1000 pF

500 mHz Output

ΩΩ

into 50

Ω

ΩΩ

NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long
NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long

FIGURE 2: 500 MHz Oscillator Circuit

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PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G