Page 1
FPN660/FPN660A
PNP Low Saturation Transistor
• These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
• Sourced from process PA.
FPN660/FPN660A
C
B
E
TO-226
Absolute Maximum Ratings
TA=25°C unless otherwise noted
Symbol Parameter FPN660 FPN660A Units
V
CEO
V
CBO
V
EBO
I
C
T
, T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltage (V) and currents (A) are negative polarity for PNP transistors
Electrical Characteristics
Collector-Emitter Voltage 60 60 V
Collector-Base Voltage 80 60 V
Emitter-Base Voltage 5 5 V
Collector Current - Continuous 3 3 A
Operating and Storage Junction Temperature Range -55 ~ +150 -55 ~ +150 °C
STG
TA=25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
BV
BV
I
CBO
I
EBO
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 55 V
Collector-Base Breakdown Voltage IE = 100µA, IE = 0 FPN660
FPN660A
80
60
Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 5.0 V
Collector-Base Cutoff Current VCB = 30V, IE = 0
= 30V, IE = 0, TA = 100°C
V
CB
10010nA
Emitter-Base Cutoff Current VEB = 4.0V, IC = 0 100 nA
On Characteristics *
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 1.0A, IB = 100mA
V
CE
(sat) Base-Emitter Saturat i on Voltage IC = 1.0A, IB = 100mA 1.25 V
V
BE
(on) Base-Emitter On Voltage IC = 1.0A, VCE = 2.0V 1.0 V
V
BE
DC Current Gain IC = 100mA, VCE = 2.0V
= 500mA, VCE = 2.0V FPN660
I
C
FPN660A
= 1.0A, VCE = 2.0V
I
C
= 2.0A, VCE = 2.0V
I
C
= 2.0A, IB = 200mA FPN660
I
C
FPN660A
70
100
250
80
40
300
550
300
450
400
Small Signal Ch ar ac t e ris t ic s
C
obo
f
T
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
NOTE: All voltage (V) and currents (A) are negative polarity for PNP transistors.
Output Capacitance VCB = 10V, IE = 0, f = 1MHz 45 pF
Transition Frequency IC = 100mA, VCE = 5.0V,
75 MHz
f = 100MHz
V
V
µA
mV
mV
mV
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Page 2
FPN660/FPN660A
Thermal Characteristics T
Symbol Parameter
P
D
R
θJC
R
θJA
Total Device Dissipation 1 W
Thermal Resistance, Junction to Case 50 °C/W
Thermal Resistance, Junction to Ambient 125 °C/W
=25°C unless otherwise noted
A
Max.
FPN660/FPN660A
Units
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
Page 3
Typical Characteristics
β = 10
β =
β = 10
β = 10
FPN660/FPN660A
Base-Emitt er Sat urat i on
Voltage vs Collecto r Curren t
1.4
β β = = 10
1.2
Base-Emitter On Voltage vs.
Collector Current
1.6
V = 2.0V
ce
1.4
1.2
1
0.8
0.6
0.4
0.2
0.001 0.01 0.1 1 10
BESAT
V -BASE-EMITTER SATURATION VOLTAGE(V)
- 40°C
25°C
125°C
I - COLLECTO R CU RRENT ( A)
C
Figure 1. Base-Emitter Saturation Voltage
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β =
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.01 0.1 1 10
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CU RRENT ( A)
C
Figure 3. Collector-Emitter Saturation Voltage
vs Collector Current
25°C
- 40°C
125 °C
1
0.8
0.6
0.4
0.2
BEON
0.0001 0.001 0.01 0.1 1 10
V - BASE- EMITT ER O N VOLTAG E (V)
I - COLLECTO R CU RRENT ( A)
C
- 40°C
25°C
125°C
Figure 2. Base-Emitter On Voltag
vs Collector Current
Input/Output Capacitance vs.
Reverse Bias Voltage
400
350
300
C
obo
250
200
150
100
CAPACITANCE (pf)
C
ibo
50
0
0.1 0.5 1 10 20 50 100
V - COLLE CT OR VOLTAGE (V)
CE
Figure 4. Inp ut/Output Ca p a c itance
vs Reverse Bias Voltage
V = 2.0V
f = 1.0MHz
ce
Current Gain vs. Collector Current
1000
900
125 °C
V = 2.0V
ce
1
800
700
600
500
25°C
0.75
0.5
400
300
FE
H - CURRE NT GA IN
200
- 40°C
100
0
0.0001 0.001 0.01 0.1 1 10
I - COLLE CTOR CURR ENT (A)
C
D
P - POWER DISSIPATION (W)
0.25
0
Figure 5. Current Gain vs Collector Current Figure 6. Power Dissipation vs Ambient Temperature
Ambient Temperatur e
TO-226
0 25 50 75 100 125 150
TEM PE RAT U RE ( C)
°
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Page 4
Package Dimensions
FPN660/FPN660A
TO-226
S7.87-7.37;
S15.61-14.47;
S0.51-0.36;
S0.76-
0.36;
S4.70-4.32;
S4.45-3.81;
1
S1.40-1.14;
S1.40-1.14;
32
5" TYP
S1.65-1.27;
0.51
S1.52-1.02;
2" TYP
2" TYP
S0.48-0.30;
99 95
PIN
1EE
2BC
3CB
TO-226AE (95,99)
S7.73-7.10;
S2.41-2.13;
For leadformed option ordering,
refer to Tape & Reel data information.
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Page 5
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Statu s Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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