Page 1
FPN530
FPN530A
FPN530 / FPN530A
C
B
E
TO-226
NPN Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NC.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter V ol tage 30 V
Collector-Base Voltage 60 V
Emitter-Base Volt age 5.0 V
Collector Current - Continuous 3.0 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
Symbol Characteristic Max Units
FPN530 / FPN530A
P
D
R
θ
JC
R
θ
JA
1999 Fairchild Semiconductor Corporation
Total Device Dissipation 1.0 W
Thermal Resistance, Junction to Case 50
Thermal Resistance, Junction to Ambient 125
°C/W
°C/W
Page 2
NPN Low Saturation Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Breakdown
IC = 10 mA, IB = 0 30 V
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current VCB = 30 V, I
Emitter Cutoff Current VEB = 4.0 V, I
DC Current Gain
Collector-Emitter S aturation Voltage
)
I
= 100 µA, IE = 0
C
I
= 100 µA, IC = 0
E
= 0
E
= 30 V, I
V
CB
= 100 mA, VCE = 2.0 V
I
C
I
= 1.0 A, VCE = 2.0 V
C
= 2.0 A, VCE = 2.0 V
I
C
= 1.0 A, IB = 100 mA
I
C
= 0, TA = 100°C
E
= 0 100 nA
C
530
530A
530
60 V
5.0 V
100
250
120
80
530A
I
= 2.0 A, IB = 200 mA
Base-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 1.25 V
)
C
Base-Emitter Saturation Voltage IC = 1.0 A, VCE = 2.0 V 1.0 V
100
10
300
250
450
nA
µ
mV
mV
mV
A
FPN530 / FPN530A
SMALL SIGNAL CHARACTERISTICS
C
obo
F
T
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 50 pF
Transition Frequency IC = 100 mA, VCE = 5.0 V,
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
150 MHz
Page 3
T ypical Characteristics
FPN530 / FPN530A
NPN Low Saturation Transistor
(continued)
Base-Emitt er Sat urat ion
Voltage vs Collector Current
1.6
β = 10
1.4
1.2
1
0.8
0.6
0.4
0.2
0.001 0.01 0.1 1 10
BESAT
V -BASE-EMITTER SATURATION VOLTAGE(V)
- 40 °C
125 °C
I - COLLECTO R CURR ENT ( A)
C
25 °C
Collector-Emitter Sat urati on
Voltage vs Collector Current
0.8
β = 10
0.6
0.4
0.2
0
0.001 0.01 0.1 1 10
CESAT
V - COLL ECTO R -EMITTER VOL TA GE (V)
I - COLLEC T OR CU R RENT ( A)
C
125 °C
- 40°C
25°C
Ba se -E m i t ter On Volt a g e v s
Collector Current
1.4
V = 2.0V
ce
1.2
1
0.8
0.6
0.4
0.2
BEON
0.0001 0.001 0.01 0.1 1 10
V - BASE-EMIT TER O N VOLTAGE (V)
I - COLLECTOR CURRENT (A)
C
- 40 °C
25 °C
125 °C
Inpu t /Ou tput Capacitance vs
Reverse Bia s Voltage
450
400
350
300
250
200
150
CAPACITANCE (pf)
100
50
0
0.1 0.5 1 10 20 50 100
C
ibo
C
obo
V - COLLECTOR VOLTAGE (V)
CE
f = 1.0MH z
Current Gain vs Collector Curren t
800
V = 2.0V
ce
700
600
500
400
300
FE
200
H - CURRENT GAIN
100
0
0.0001 0.001 0.01 0.1 1 10
125 °C
25°C
- 40°C
I - COLLE CTO R CU RRENT (A)
C
Power Dissipation vs
Ambient Tem peratur e
1
0.75
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 25 50 75 100 125 150
TO-226
TEM P E RAT U RE ( C)
°
Page 4
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PRODUCT STA TUS DEFINITIONS
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Advance Information
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Formative or
In Design
First Production
Full Production
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This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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Rev. G
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