Datasheet FGPF50N33BT Specification

TO-220F

G

E

C

FGPF50N33BT

330 V PDP Trench IGBT

FGPF50N33BT — 330 V PDP Trench IGBT

November 2013

Features

• High Current Capability

• Low Saturation Voltage: V

• High Input Impedance

•RoHS Compliant

=1.6 V @ IC = 50 A

CE(sat)

General Description

Using novel trench IGBT technology, Fairchild's new series of
trench IGBTs offer the optimum performance for PDP TV appli­cations where low conduction and switching losses are essen­tial.

Applications

•PDP TV

Absolute Maximum Ratings

Symbol Description Ratings Unit

V

CES

V

GES

I

C

I

Cpulse (1)*

I

Cpulse (2)*

P

D

Operating Junction Temperature -55 to +150

T

J

T

stg

T

L

Collector to Emitter Voltage 330 V
Gate to Emitter Voltage  30 V
Collector Current @ TC = 25oC50 A
Pulsed Collector Current

Pulsed Collector Current
Maximum Power Dissipation @ TC = 25oC43 W

Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

@ T

= 25oC

C

@ T

= 25oC

C

= 100oC 17.2 W

C

120 A
160 A

300

o

C

o

C

o

C

Thermal Characteristics

Symbol Parameter Typ. Max. Unit

R

(IGBT) Thermal Resistance, Junction to Case - 2.9

JC

R

JA

Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1

2: Half Sine Wave, D < 0.01, pluse width < 10usec
*Ic_pluse limited by max Tj

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGPF50N33BT Rev. C1

Thermal Resistance, Junction to Ambient - 62.5

o

C/W

o

C/W

Package Marking and Ordering Information

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FGPF50N33BTTU FGPF50N33BT TO-220F Tube N/A N/A

FGPF50N33BT — 330 V PDP Trench IGBT

50

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BV

CES

BV
T

J

I

CES

I

GES

On Characteristics

V

GE(th)

V

CE(sat)

Dynamic Characteristics

C

ies

C

oes

C

res

Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A, Tc=25oC330 - - V

= 0 V, IC = 250 A, Tc=125oC340 - - V

V

GE

Temperature Coefficient of Breakdown

CES

Voltage
Collector Cut-Off Current VCE = V

G-E Leakage Current VGE = V

V

= 0 V, IC = 250 A

GE

, VGE = 0 V, Tc=25oC- - 20 A

CES

= V

V

CE

, VGE = 0 V, Tc=125oC - - 200 A

CES

, VCE = 0 V - - ±200 nA

GES

-0.2-V/

G-E Threshold Voltage IC = 250 A, VCE = VGE 2.3 3.3 4.3 V

I

= 20 A, VGE = 15 V, - 1.2 1.5 V

C

= 30 A, VGE = 15 V, - 1.3 - V

I

C

= 50 A, VGE = 15 V,

Collector to Emitter Saturation Voltage

Input Capacitance
Output Capacitance - 70 - pF

I

C

T

= 25oC

C

= 50 A, VGE = 15 V,

I

C

T

= 125oC

C

V

= 30 V, VGE = 0 V,

CE

f = 1 MHz

-1.6- V

-1.7- V

- 980 - pF

Reverse Transfer Capacitance - 40 - pF

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

ge

Q

gc

©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

Turn-On Delay Time

V

= 200 V, IC = 20 A,

Rise Time - 33 - ns
Turn-Off Delay Time - 32 - ns

CC

R

= 5 , V

G

Resistive Load, T

GE

= 15 V,

= 25oC

C

Fall Time - 202 - ns
Turn-On Delay Time

V

= 200 V, IC = 20 A,

Rise Time - 37 - ns
Turn-Off Delay Time - 33 - ns

CC

R

= 5 , V

G

GE

= 15 V,

Resistive Load, T

= 125oC

C

Fall Time - 332 - ns
Total Gate Charge

V

= 200 V, IC = 20 A,

Gate to Emitter Charge - 6 - nC
Gate to Collector Charge - 14 - nC

CE

V

= 15 V

GE

-9-ns

-9-ns

-35-nC

FGPF50N33BT Rev. C1

FGPF50N33BT — 330 V PDP Trench IGBT

0.0 1.5 3.0 4.5 6.0

0

40

80

120

160

20V

TC = 25oC

15V

12V

10V

VGE = 8V

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

0.0 1.5 3.0 4.5 6.0

0

40

80

120

160

20V

TC = 125oC

15V

12V

10V

VGE = 8V

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

012345

0

40

80

120

160

Common Emitter
VGE = 15V

TC = 25oC
TC = 125oC

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

03691215

0

40

80

120

160

Common Emitter
VCE = 20V

TC = 25oC
TC = 125oC

Collector Current, I

C

[A]

Gate-Emitter Voltage,VGE [V]

0 4 8 121620

0

4

8

12

16

20

IC = 20A

30A

50A

Common Emitter
TC = 25oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Vo ltag e, VGE [V]

25 50 75 100 125

0.8

1.0

1.2

1.4

1.6

1.8

2.0

50A

30A

IC = 20A

Common Emitter
VGE = 15V

Collector-Emitter Voltage, V

CE

[V]

Case Temperature, TC [oC]

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V

GE

Temperature at Variant Current Level

©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGPF50N33BT Rev. C1

Typical Performance Characteristics

0 4 8 121620

0

4

8

12

16

20

IC = 20A

30A

50A

Common Emitter
TC = 125oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage, VGE [V]

110

0

500

1000

1500

Common Emitter
VGE = 0V, f = 1MHz

TC = 25oC

C

res

C

oes

C

ies

Capacitance [pF]

Collector-Emitter Voltage, VCE [V]

30

010203040

0

3

6

9

12

15

Common Emitter
TC = 25oC

200V

VCC = 100V

Gate-Emitter Voltage, V

GE

[V]

Gate Ch a r g e , Qg [nC]

0.1 1 10 100 400

0.01

0.1

1

10

100

500

Single Nonrepetitive
Pulse T

C

= 25oC

Curves must be derated
linearly with increase
in temperature

DC

10s

100s

Collector Current, I

c

[A]

Collector-Emitter Voltage, VCE [V]

0 1020304050

1

10

100

Common Emitter
VCC = 200V, VGE = 15V

IC = 20A
TC = 25oC
TC = 125oC

t

d(on)

t

r

Switching Time [ns]

Gate Resistance, RG [ ]

0 1020304050

10

100

1000

4000

Common Emitter
VCC = 200V, VGE = 15V

IC = 20A
TC = 25oC
TC = 125oC

t

d(off)

t

f

Switching Time [ns]

Gate Resistance, RG []

FGPF50N33BT — 330 V PDP Trench IGBT

Figure 7. Saturation Voltage vs. V

Figure 8. Capacitance Characteristics

GE

Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics

Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.

©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGPF50N33BT Rev. C1

Gate Resistance

Gate Resistance

Typical Performance Characteristics

10 20 30 40 50

10

100

1000

5000

Commo n E m itter
VGE = 15V, RG = 5

TC = 25oC
TC = 125oC

t

d(off)

t

f

Switching Time [ns]

Collector Cu rre n t, IC [A]

10 20 30 40 50

5

10

100

200

Common Emitter
VGE = 15V, RG = 5

TC = 25oC
TC = 125oC

t

r

t

d(on)

Switching Time [ns]

Collector Current, IC [A]

0 1020304050

10

100

1000

5000

Common Emitter
VCC = 200V, VGE = 15V

IC = 20A
TC = 25oC
TC = 125oC

E

on

E

off

Gate Resistance, RG [ ]

10 20 30 40 50

1

10

100

1000

10000

20000

Common Emitter
VGE = 15V, RG = 5

TC = 25oC
TC = 125oC

E

on

E

off

Collector Current, IC [A]

110100500

1

10

100

200

Safe Operating Area
VGE = 15V, TC = 125oC

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.

Collector Current Collector Current

Figure 15. Switching Loss vs. Gate Res istance Figure 16. Switching Loss vs. Collector Current

FGPF50N33BT — 330 V PDP Trench IGBT

Switching Loss [μJ]

Switching Loss [μJ]

Figure 17. Turn off Switching SOA Characteristics

©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGPF50N33BT Rev. C1

Typical Performance Characteristics

1E-5 1E-4 1E-3 0.01 0.1 1 10 100

1E-3

0.01

0.1

1

0.01

0.02

0.1

0.05

0.3

single pulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t 1/t2

Peak Tj = Pdm x Zthjc + T

C

0.5

t

1

P

DM

t

2

Figure 18.Transient Thermal Impedance of IGBT

FGPF50N33BT — 330 V PDP Trench IGBT

©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGPF50N33BT Rev. C1

Package Dimensions

FGPF50N33BT — 330 V PDP Trench IGBT

Figure 19. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor re presentative to ver ify o r
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif­ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGPF50N33BT Rev. C1

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®

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intended to be an exhaustive list of all such trademarks.

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*

®

®

®

®

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®

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®

®

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®

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®

®

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Sync-Lock™

®*

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SerDes™

UHC
Ultra FRFET™
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®

®

®

®

XS™

®

*

FGPF50N33BT — 330 V PDP T rench IGBT

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The data sheet is for reference information only.

Rev. I66

©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGPF50N33BT Rev. C1