Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Ordering number:ENN6219
FH105
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Composite type with 2 transistors contained in the
MCP package currently in use, improving the
mounting efficiency greatly.
· The FH105 is formed with two chips, being equivalent to the 2SC5245, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
E2
E1B1
Tr1
Tr2
C1 B2 C2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
Mounted on a ceramic board (250mm2×0.8mm) 1unit
C
Mounted on a ceramic board (250mm
T
Package Dimensions
unit:mm
2160
[FH105]
0.25
6
12
0.65
2.0
2
×0.8mm)
54
3
0.2
0.4250.425
1.25
0.9
2.1
0.15
0 to 0.1
0.2
1 : Collector1
2 : Base2
3 : Collector2
4 : Emitter2
5 : Emitter1
6 : Base1
SANYO : MCP6
02V
01V
5.1V
03Am
051Wm
003Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
oitaRniaGtnerruCCD
ecnereffiDegatloVrettimE-ot-esaB
h
h
V
V
OBC
V
OBE
V
EF
EF
V
)egral/llams(
EB
V
)llams-egral(
I,V01=
BC
BE
EC
EC
BC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am01=
C
I,V5=
Am01=7.059.0
C
I,V5=
Am01=0.1Vm
C
Note) The specifications shown above are for each individual transistor.
Marking : 105
N0199TS (KOTO) TA-1702 No.6219–1/5
sgnitaR
nimpytxam
09002
Continued on next page.
tinU
Page 2
Continued from preceding page.
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
V
T
V
boC
2
V
|e12S|
FNVECI,V5=
EC
BC
EC
Note) The specifications shown above are for each individual transistor.
Marking : 105
h
-- I
5
3
2
FE
100
7
5
3
2
DC Current Gain, h
FE
C
VCE=5V
FH105
I,V5=
C
I,V5=
C
C
sgnitaR
nimpytxam
Am01=
zHM1=f,V01=
zHG5.1=f,Am01=
811zHG
54.07.0Fp
801Bd
tinU
zHG5.1=f,Am5=4.10.3Bd
f
-- I
T
C
=5V
CE
V
1V
– GHz
T
3
2
10
7
5
3
2
10
7
5
23 57
0.1 1.0 10
5
3
2
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
7
23 57
0.1
Collector-to-Base Voltage, VCB-- V
12
10
23 57 23 57
Cob -- V
1.0
NF -- I
CB
23 2357
C
1.0
Gain-Bandwidth Product, f
7
5
23 57 23 5 23 57
100
IT00322
f=1MHz f=1MHz
10
5
IT00324
f=1.5GHz
0.1 1.0
5
3
2
1.0
7
5
3
2
0.1
Reverse Transfer Capacitance, Cre – pF
7
5
7
23 57
0.1
Collector-to-Base Voltage, VCB-- V
12
10
Collector Current, IC–mACollector Current, IC–mA
Cre -- V
23 2357
1.0
NF -- I
CB
C
10
10
IT00323
5
IT00325
VCE=2V
f=1GHz
8
6
4
Noise Figure, NF – dB
2
0
23 357 2 2357
0.1
1.0
Collector Current, IC–mA
=1V
5V
CE
V
10
5
IT00326
8
6
4
Noise Figure, NF – dB
2
0
23 357 2 2357
0.1
1.0
Collector Current, IC–mA
10
5
IT00327
No.6219–2/5
Page 3
FH105
IT00326
C C
2
S21e
16
14
–dB
2
12
10
8
6
4
2
Forward Transfer Gain, S21e
0
57
3
350
300
– mW
250
C
200
23 57
1.0
Collector Current, IC–mA
Mounted on a ceramic board (250mm2×0.8mm)
-- I
V
CE
=1V
10
P
-- Ta
C
Total dissipation
C
5V
2V
23 57
f=1.5GHz
IT00328
100
16
14
–dB
2
12
10
8
6
4
2
Forward Transfer Gain, S21e
0
57
3
23 57
1.0
Collector Current, IC–mA
S21e
2
-- I
V
CE
=1V
10
C
2V
f=1GHz
5V
23 57
IT00329
100
150
100
Collector Dissipation, P
50
0
0 16014012010080604020
1 unit
Ambient Temperature, Ta – °C
S parameter
S11e
f=200MHz to 2000MHz(200MHz Step)
j50
j25
j10
25
0
--j10
10
2.0GHz
--j25
2.0GHz
2.0GHz
2.0GHz
VCE=5V
IC=10mA
VCE=1V
IC=1mA
--j50
100
50
VCE=5V
IC=5mA
0.2GHz
VCE=2V
IC=3mA
150
0.2GHz
0.2GHz
--j100
IT00330
S21e
f=200MHz to 2000MHz(200MHz Step)
°
j100
250
j150
j200
j250
±180
150
VCE=2V
IC=3mA
°
120
°
0.2GHz
VCE=5V
IC=5mA
0.2GHz
VCE=1V
°
0.2GHz
IC=1mA
VCE=5V
IC=10mA
0.2GHz
90
2.0GHz
2.0GHz
2.0GHz
2.0GHz
°
60
12
84
0.2GHz
--j250
--j200
--j150
IT00331 IT00332
--150
°
--120
°
°
--90
--60
°
°
30
20
16
0
°
--30
No.6219–3/5
Page 4
FH105
S12e
f=200MHz to 2000MHz(200MHz Step)
90
°
120
VCE=5V
IC=5mA
150
°
VCE=5V
IC=10mA
0.2GHz
0.2GHz
0.2GHz
°
±180
°
--150
°
--120
--90
°
°
2.0GHz
60
2.0GHz
VCE=2V
2.0GHz
VCE=1V
IC=3mA
0.2GHz
0.04 0.08 0.12 0.16 0.2
°
--60
°
IC=1mA
--30
IT00333
2.0GHz
°
30
0
°
S22e
f=200MHz to 2000MHz(200MHz Step)
j50
j25
j10
0
10 25
50
2.0GHz
2.0GHz
--j10
2.0GHz
2.0GHz
VCE=5V
IC=5mA
--j25
VCE=2V
IC=3mA
--j50
100
150
VCE=5V
IC=10mA
0.2GHz
VCE=1V
IC=1mA
j100
250
0.2GHz
0.2GHz
--j100
j150
j200
j250
0.2GHz
--j250
--j200
--j150
IT00334
S Parameters (Common emitter)
VCE=5V, IC=5mA, ZO=50Ω
)zHM(qerFS|11|
002367.05.73–629.119.641630.07.07298.01.91–
004095.04.56–202.93.421850.09.06047.01.92–
006654.05.58–371.74.901370.04.75136.07.33–
008473.00.201–347.57.89680.07.65665.08.53–
0001323.00.511–587.45.09890.07.65825.02.73–
0021882.05.721–501.46.38011.02.75505.04.83–
0041462.07.731–995.35.77321.07.75884.06.93–
0061842.04.741–312.33.17631.06.75674.02.14–
0081932.09.651–509.24.66051.06.75664.03.34–
0002532.07.561–156.23.16561.02.75264.04.54–
∠ S
11
S|12|
VCE=5V, IC=10mA, ZO=50Ω
)zHM(qerFS|11|
002506.06.25–453.612.631130.05.76408.09.32–
004714.06.48–110.113.311840.04.26226.05.03–
006913.03.601–620.85.001260.02.26335.00.23–
008662.06.421–052.63.19670.04.36194.04.23–
0001832.05.631–511.57.48090.03.46964.02.33–
0021522.09.841–633.48.87401.04.46854.06.43–
0041512.03.851–318.34.37911.05.46944.08.53–
0061312.03.761–563.31.86531.08.36344.07.73–
0081212.06.571–030.35.36051.01.36634.06.93–
0002612.05.771–457.29.85661.05.26834.09.14–
∠ S
11
S|12|
∠ S
∠ S
12
12
S|21|
S|21|
∠ S
∠ S
21
21
S|22|
S|22|
∠ S
∠ S
22
22
No.6219–4/5
Page 5
FH105
VCE=2V, IC=3mA, ZO=50Ω
)zHM(qerFS|11|
002248.07.03–194.80.351440.05.27139.01.71–
004407.03.65–161.79.131570.09.06808.08.82–
006975.01.67–978.53.611590.01.45696.02.63–
008084.01.39–288.42.401901.00.15516.06.04–
0001714.03.601–451.40.59121.03.94465.05.34–
0021673.06.911–795.31.78231.07.84625.08.54–
0041343.02.031–212.32.08341.06.84694.05.74–
0061913.05.041–578.24.37451.07.84574.06.94–
0081303.00.051–406.27.76661.06.84164.06.15–
0002892.00.061–383.21.26971.09.84154.09.25–
∠ S
11
S|12|
VCE=1V, IC=1mA, ZO=50Ω
)zHM(qerFS|11|
002549.09.81–692.35.261450.02.77089.00.11–
004488.03.73–602.39.541201.09.56439.05.02–
006018.06.35–249.22.131931.03.65078.00.92–
008827.04.96–117.28.711661.06.84118.05.53–
0001766.05.28–944.20.701781.05.24367.09.04–
0021506.08.59–252.29.69991.03.73517.07.54–
0041165.01.601–160.21.88702.05.33376.04.94–
0061815.02.711–909.15.97212.06.03836.04.35–
0081294.05.721–667.12.27512.06.82116.05.65–
0002564.09.731–856.12.56712.06.72295.09.95–
∠ S
11
S|12|
∠ S
∠ S
12
12
S|21|
S|21|
∠ S
∠ S
21
21
S|22|
S|22|
∠ S
∠ S
22
22
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 1999. Specifications and information herein are subject
to change without notice.
PS No.6219–5/5
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