
FH102
Ordering number : EN5874
High-Frequency Low-Noise Amp,
Differential Amp Applications
NPN Epitaxial Planar Silicon Composite Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1130 No.5874-1/5
Package Dimensions
unit: mm
2149-MCP6
[FH102]
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
0‘0.1
0.65
2.0
1.25
0.4250.425
2.1
0.25
12
54
0.15
0.9
0.2
0.2
3
6
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
20 V
Collector-to-Emitter Voltage V
CEO
10 V
Emitter-to-Base Voltage V
EBO
2V
Collector Current I
C
70 mA
Collector Dissipation P
C
Mounted on ceramic board 300 mW
(250mm2×0.8mm), 1unit
Total Dissipation P
T
Mounted on ceramic board 500 mW
(250mm2×0.8mm)
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
Collector Cutoff Current I
CBO
VCB=10V, IE=0 1.0 µA
Emitter Cutoff Current I
EBO
VEB=1V, IC=0 10 µA
DC Current Gain h
FE
VCE=5V, IC=20mA 90 200
DC Current Gain Ratio h
FE(small/large)VCE
=5V, IC=20mA 0.7 0.95
Base-to-Emitter Voltage V
BE(small-large)VCE
=5V, IC=20mA 1.0 mV
Difference
Gain-Bandwidth Product f
T
VCE=5V, IC=20mA 5 7 GHz
Output Capacitance Cob VCB=10V, f=1MHz 0.75 1.2 pF
Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.5 pF
Continued on next page.
Features
• Composite type with 2 transistors contained in the MCP
package currently in use, improving the mounting
efficiency greatly.
• The FH102 is formed with two chips, being equivalent to
the 2SC5226, placed in one package.
• Optimal for differential amplification due to excellent
thermal equilibrium and pair capability.

FH102
No.5874-2/5
Continued from preceding page.
Parameter Symbol Conditions
Ratings
min typ max
Unit
Forward Transfer Gain S2le2(1) VCE=5V, IC=20mA, f=1GHz 9 12 dB
S2le2(2) VCE=5V, IC=3mA, f=1GHz 8 dB
Noise Figure NF VCE=5V, IC=7mA, f=1GHz 1.0 1.8 dB
Note) The specifications shown above are for each individual transistor except the hFE(small/large) and V
BE
(small-large) for which pair capability is also shown.
Marking : 102
Electrical Connection
1.0
7
100
100
7
10
1.0 10 100
5
7
5
3
2
3
2
7
1.0
0.1
10
1.0
10
5
7
5
2
3
2
7
0.1
1.0
5
7
5
3
2
3
2
7
0.1
1.0
5
7
5
3
2
3
2
7
5
3 2 2
753
2
753
7532 7532 2
10
7 7532 7532 2 3
1.0
0.1
10
7 7532 7532 2 3
VCE=5V
VCE=5V
DC Current Gain, h
FE
Output Capacitance, Cob – pF
Reverse Transfer Capacitance, Cre – pF
Collector Current,I
C
– mA Collector Current,IC – mA
Collector-to-Base Voltage, V
CB
– V Collector-to-Base Voltage, VCB – V
h
FE
– I
C
f
T
– I
C
Cob – V
CB
Cre – V
CB
f=1MHzf=1MHz
Gain-Bandwidth Product,f
T
– GHz

12
8
4
0
10
6
2
14
12
8
4
0
10
6
2
1.0
2
7
10 100
5
3
7532 7532
1.0
2
7
10
100
5
3
7532 7532
0
200
100
300
500
400
600
80200 40 60 160120 140
100
Ambient Temperature, Ta – °C
Allowable Power Dissipation, P
D
– mW
VCE=5V
f=1GHz
NF – I
C
S21e
2
– I
C
Noise Figure, NF – dB
Forward Transfer Gain, S21e
2
– dB
P
D
– Ta
V
CE
=5V
V
CE
=2V
Collector Current,I
C
– mA
Collector Current,I
C
– mA
Total dissipation
1 unit
Mounted on ceramic board (250mm
2
×
0.8mm)
f=1GHz

No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
0
30°
60°
90°
120°
150°
–30°
–60°
–90°
–120°
–150°
±180°
0
30°
60°
90°
120°
150°
–30°
–60°
–90°
–120°
–150°
±180°
j10
j25
j50
j100
j150
j200
j250
–j10
–j25
–j50
–j100
–j150
–j250
–j200
0
j10
j25
j50
j100
j150
j200
j250
–j10
–j25
–j50
–j100
–j150
–j200
–j250
0
10 25 50 100 150 250 500
VCE=5V
I
C
=20mA
VCE=5V
I
C
=20mA
VCE=5V
I
C
=7mA
VCE=5V
I
C
=7mA
VCE=2V
I
C
=3mA
VCE=2V
I
C
=3mA
2.0GHz
2.0GHz
2.0GHz
2.0GHz
0.1GHz
0.1GHz
0.1GHz
10 25 50 100 150 250 500
VCE=5V
I
C
=7mA
VCE=5V
I
C
=20mA
VCE=2V
I
C
=3mA
2.0GHz
2.0GHz
2.0GHz
0.1GHz
VCE=5V
I
C
=20mA
VCE=5V
I
C
=7mA
VCE=2V
I
C
=3mA
2.0GHz
2.0GHz
2.0GHz
0.1GHz
0.1GHz
0.1GHz
0.1GHz
4 8 12
16
20
0.04 0.08 0.12 0.16
0.2
f=100MHz,200 to 2000MHz(200MHz step)
f=100MHz,200 to 2000MHz(200MHz step) f=100MHz,200 to 2000MHz(200MHz step)
f=100MHz,200 to 2000MHz(200MHz step)

FH102
No.5874-5/5
S Parameters (Common emitter)
VCE=5V, IC=7mA, ZO=50Ω
VCE=5V, IC=20mA, ZO=50Ω
VCE=2V, IC=3mA, ZO=50Ω
)zHM(qerF
S11 ∠ S
11
S12 ∠ S
12
S21 ∠ S
21
S22 ∠ S
22
001 027.0 – 0.64 379.71 5.841 030.0 5.86 088.0 – 6.32
002 216.0 – 9.08 729.31 3.721 740.0 1.75 796.0 – 6.73
004 794.0 – 3.121 656.8 0.501 660.0 3.15 974.0 – 6.74
006 654.0 – 5.341 080.6 8.29 970.0 9.25 283.0 – 5.05
008 044.0 – 6.751 527.4 3.48 490.0 4.55 933.0 – 8.15
0001 634.0 – 5.761 468.3 0.77 011.0 8.65 323.0 – 4.35
0021 434.0 – 1.671 852.3 3.07 621.0 9.75 213.0 – 8.55
0041 334.0 6.671 748.2 5.46 341.0 4.85 403.0 – 3.85
0061 334.0 9.071 923.2 4.75 061.0 9.85 692.0 – 0.26
0081 434.0 0.561 252.2 2.45 871.0 6.85 392.0 – 0.56
0002 934.0 6.951 750.2 2.94 791.0 1.85 492.0 – 1.86
)zHM(qerF
S11 ∠ S
11
S12 ∠ S
12
S21 ∠ S
21
S22 ∠ S
22
001 184.0 – 8.87 597.92 9.231 220.0 9.36 707.0 – 2.83
002 024.0 – 2.911 800.91 2.211 330.0 8.06 074.0 – 1.15
004 193.0 – 6.151 614.01 4.59 250.0 7.46 692.0 – 3.55
006 683.0 – 4.661 480.7 6.68 170.0 2.76 632.0 – 1.65
008 183.0 – 9.571 704.5 1.08 290.0 4.86 312.0 – 6.65
0001 283.0 2.871 104.4 1.47 411.0 8.76 802.0 – 9.75
0021 583.0 1.271 107.3 5.86 431.0 8.66 402.0 – 7.06
0041 883.0 7.661 712.3 6.36 651.0 6.56 202.0 – 5.36
0061 093.0 1.261 938.2 8.85 671.0 0.46 991.0 – 9.76
0081 193.0 7.651 435.2 3.45 791.0 4.26 791.0 – 2.17
0002 493.0 1.251 913.2 1.05 912.0 6.06 791.0 – 2.47
)zHM(qerF
S11 ∠ S
11
S12 ∠ S
12
S21 ∠ S
21
S22 ∠ S
22
001 858.0 – 4.23 314.9 2.751 040.0 6.27 549.0 – 5.61
002 287.0 – 7.06 781.8 5.831 070.0 2.95 338.0 – 3.92
004 356.0 – 1.101 558.5 8.311 101.0 5.44 736.0 – 2.34
006 885.0 – 5.621 733.4 4.89 411.0 1.93 515.0 – 0.05
008 755.0 – 7.341 444.3 7.78 221.0 0.83 454.0 – 8.35
0001 345.0 – 3.651 178.2 5.87 031.0 6.83 624.0 – 1.75
0021 635.0 8.661– 644.2 5.07 731.0 3.04 704.0 – 3.06
0041 335.0 5.571– 541.2 5.36 641.0 5.24 393.0 – 8.36
0061 725.0 0.771 409.1 1.75 551.0 0.54 283.0 – 0.86
0081 525.0 3.071 417.1 7.15 861.0 3.74 973.0 – 0.27
0002 825.0 8.361 465.1 9.54 381.0 2.94 873.0 – 8.57