Page 1
TO-220F
(Retractable)
G
E
C
FGPF4536
360 V PDP Trench IGBT
FGPF4536 — 360 V PDP Trench IGBT
November 2013
Features
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
•Fast Switching
•RoHS Compliant
=1.59 V @ IC = 50 A
CE (sat)
General Description
Using novel trench IGBT technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for consumer
appliances, PDP TV and lighting applications where low conduction and switching losses are essential.
Applications
• PDP TV, Consumer appliances, Lighting
Absolute Maximum Ratings
Symbol Description Ratings Unit
V
CES
V
GES
I
C pulse(1)*
P
D
Operating Junction Temperature -55 to +150
T
J
T
stg
T
L
Collector to Emitter Voltage 360 V
Gate to Emitter Voltage 30 V
Pulsed Collector Current @ TC = 25oC220 A
Maximum Power Dissipation @ TC = 25oC 28.4 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100oC11.4 W
C
300
o
C
o
C
o
C
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
R
(IGBT) Thermal Resistance, Junction to Case - 4.4
JC
R
JA
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1
* Ic_pluse limited by max Tj
©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGPF4536 Rev. C1
Thermal Resistance, Junction to Ambient - 62.5
sec
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
FGPF4536 — 360 V PDP Trench IGBT
Part Number Top Mark Package
FGPF4536 FGPF4536 TO-220F Tube N/A N/A
Electrical Characteristics of the IGBT T
Packing
Method
= 25°C unless otherwise noted
C
Reel Size Tape Width Quantity
50
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BV
CES
BV
T
J
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250 A 360 - - V
/
Temperature Coefficient of Breakdown
CES
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 250 A
GE
CES
GES
-0.4-V/
, VGE = 0 V - - 100 A
, VCE = 0 V - - ±400 nA
G-E Threshold Voltage IC = 250 A, VCE = VGE 2.4 3.3 4.0 V
Collector to Emitter
Saturation Voltage
I
= 20 A, VGE = 15 V -1.19- V
C
= 30 A, VGE = 15 V
I
C
I
= 50 A, VGE = 15 V,
C
T
= 25oC
C
= 50 A, VGE = 15 V,
I
C
T
= 125oC
C
-1.33- V
- 1.59 1.8 V
-1.66- V
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance - 56 - pF
Reverse Transfer Capacitance - 43 - pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
ge
gc
Turn-On Delay Time
Rise Time - 20 - ns
Tur n-Off Delay Time - 41 - ns
Fall Time - 182 - ns
Turn-On Delay Time
Rise Time - 21 - ns
Tur n-Off Delay Time - 43 - ns
Fall Time - 249 - ns
Total Gate Charge
Gate to Emitter Charge - 5.4 - nC
Gate to Collector Charge - 15 - nC
V
= 30 V, VGE = 0 V,
CE
f = 1MHz
V
= 200 V, IC = 20 A,
CC
R
= 5 , V
G
GE
= 15 V,
Resistive Load, T
V
= 200 V, IC = 20 A,
CC
R
= 5 , V
G
Resistive Load, T
V
= 200 V, IC = 20 A,
CE
V
= 15 V
GE
GE
= 15 V,
= 25oC
C
= 125oC
C
- 1295 - pF
-5-ns
-4.6-ns
-47-nC
©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FGPF4536 Rev. C1
Page 3
FGPF4536 — 360 V PDP Trench IGBT
0123456
0
50
100
150
200
12V
20V
TC = 25oC
15V
10V
VGE = 8V
Collector Current, I
C
[A]
]
0123456
0
50
100
150
200
12V
10V
20V
TC = 125oC
15V
VGE = 8V
Collector Current, I
C
[A]
Collector-Em itte r V o ltag e , VCE [V]
0123456
0
50
100
150
200
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
Collector Current, I
C
[A]
Collector-Emitter Voltage, VCE [V]
024681012
0
50
100
150
200
Common Emitter
VCE = 10V
TC = 25oC
TC = 125oC
Collector Current, I
C
[A]
Gate-Emitter Voltage,VGE [V]
0 4 8 12 16 20
0
4
8
12
16
20
30A
IC = 20A
50A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, V
CE
[V]
Gate-Em itt e r Voltage, VGE [V]
0 4 8 12 16 20
0
4
8
12
16
20
IC = 20A
50A
30A
Common Emitter
TC = 125oC
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, VGE [V]
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Collector-Emitter V oltage, V [V
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. V
©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FGPF4536 Rev. C1
Figure 6. Saturation Voltage vs. V
GE
GE
Page 4
Typical Performance Characteristics
20 40 60 80 100 120 140
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
30A
50A
IC = 20A
Common Emitter
VGE = 15V
Collector-Emitter Voltage, V
CE
[V]
Case Temperature, TC [oC]
0.1 1 10 30
0
400
800
1200
1600
2000
2400
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
C
res
C
oes
C
ies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
0 1020304050
0
3
6
9
12
15
Common Emitter
TC = 25oC
200V
VCC = 100V
Gate-Emitter Voltage, V
GE
[V]
Gate C h a r g e , Qg [nC]
0.1 1 10 100 1000
0.01
0.1
1
10
100
500
Single Nonrepetitive
Pulse T
C
= 25oC
Curves must be derated
linearly with increase
in temperature
1ms
10 ms
DC
10s
100s
Collector Current, I
c
[A]
Collector-Emitter Voltage, VCE [V]
0 1020304050
1
10
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
t
d(on)
t
r
Switching Time [ns]
Gate Resistance, RG []
0 1020304050
10
100
1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
t
d(off)
t
f
Switching Time [ns]
Gate Resistance, RG []
Figure 7. Saturation Voltage vs. Case Figure 8. Capacitance Characteristics
Temperature at Variant Current Level
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
FGPF4536 — 360 V PDP Trench IGBT
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FGPF4536 Rev. C1
Page 5
Typical Performance Characteristics
10 20 30 40 50
1
10
100
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
t
r
t
d(on)
Switching Time [ns]
Collector Current, IC [A]
10 20 30 40 50
10
100
400
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
t
d(off)
t
f
Switching Time [ns]
Collector Current, IC [A]
10 20 30 40 50
1
10
100
1000
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
E
on
E
off
Switching Loss [uJ]
Collector Curre nt, IC [A]
0 1020304050
10
100
1000
5000
Comm o n Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
E
on
E
off
Switching Loss [uJ]
Gate Resistance, RG []
1 10 100 500
0.1
1
10
100
500
Safe Operating A rea
VGE = 15V, TC = 125oC
Collector Current, I
C
[A]
Collector-Emitter Voltage, VCE [V]
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
Figure 15. Switching Loss vs. Gate Res istance Figure 16. Switching Loss vs. Collector Current
FGPF4536 — 360 V PDP Trench IGBT
Figure 17. Turn off Switching SOA Characteristics
©2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
FGPF4536 Rev. C1
Page 6
Typical Performance Characteristics
10
-5
10
-4
10
-3
10
-2
10
-1
11010
2
0.01
0.1
1
8
0.05
0.01
0.02
0.1
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t 1/t2
Peak Tj = Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
Figure 18.Transient Thermal Impedance of IGBT
FGPF4536 — 360 V PDP Trench IGBT
©2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
FGPF4536 Rev. C1
Page 7
Package Dimensions
FGPF4536 — 360 V PDP Trench IGBT
Figure 19. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor re presentative to ver ify o r
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003
Dimensions in Millimeters
©2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
FGPF4536 Rev. C1
Page 8
TRADEMARKS
®
™
The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconductor and/ or its global subsidiaries, and is n ot
intended to be an exhaustive list of all such trademarks.
AccuPower™
®
AX-CAP
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FPS™
*
®
®
®
®
®
F-PFS™
®
FRFET
Global Power Resource
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
®
MicroPak2™
MillerDrive™
MotionMax™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
®
SM
®
®
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
®
®
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
®
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
®
®
SyncFET™
Sync-Lock™
®*
TinyBoost
TinyBuck
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT
SerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
®
®
®
®
XS™
®
*
FGPF4536 — 360 V PDP Trench IGBT
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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and (c) whose failure to perform when properly used in accordan ce with
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementa ry data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The data sheet is for reference information only.
Rev. I66
©2010 Fairchild Semiconductor Corporation
FGPF4536 Rev. C1
8
www.fairchildsemi.com
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