Datasheet FGL35N120FTD Specification

Is Now Part of

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FGL35N120FTD

G

E

C

TO-264 3L

G C E

1200 V, 35 A Field Stop Trench IGBT

FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT

November 2013

Features

• Field Stop Trench Technology

• High Speed Switching

• Low Saturation Voltage: V

• High Input Impedance

CE(sat)

= 1.68 V @ IC = 35 A

General Description

Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.

Applications

• Solar Inverter, UPS, Welder, PFC

Absolute Maximum Ratings

Symbol Description Ratings Unit

V

CES

V

GES

I

C

I

CM (1)

I

F

P

D

Operating Junction Temperature -55 to +150

T

J

T

stg

T

L

Collector to Emitter Voltage 1200 V Gate to Emitter Voltage  25 V Collector Current

Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Continuous Forward Current

Maximum Power Dissipation @ TC = 25oC368 W Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

@ T

= 25oC

C

@ T

= 100oC

C

@ T

= 25oC

C

@ T

= 25oC

C

@ T

= 100oC

C

= 100oC147 W

C

70 A 35 A

105 A

80 A 40 A

300

o

C

o

C

o

C

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol Parameter Max. Unit

R

(IGBT) Thermal Resistance, Junction to Case 0.34

JC

(Diode) Thermal Resistance, Junction to Case 0.9

R

JC

R

JA

Thermal Resistance, Junction to Ambient 25

FGL35N120FTD Rev. C1

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FGL35N120FTDTU FGL35N120FTD TO-264 Tube N/A N/A

FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT

30

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BV

CES

I

CES

I

GES

On Characteristics

V

GE(th)

V

CE(sat)

Dynamic Characteristics

C

ies

C

oes

C

res

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss - 4.2 - mJ

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss - 5.2 - mJ

E

ts

Q

g

Q

ge

Q

gc

Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 1200 - - V Collector Cut-Off Current VCE = V G-E Leakage Current VGE = V

, VGE = 0 V - - 1 mA

CES

, VCE = 0 V - - ±250 nA

GES

G-E Threshold Voltage IC = 35 mA, VCE = VGE 3.5 6.2 7.5 V

= 35 A, VGE = 15 V -1.682.2V

I

Collector to Emitter Saturation Voltage

Input Capacitance Output Capacitance - 180 - pF Reverse Transfer Capacitance - 95 - pF

Turn-On Delay Time

C

= 35 A, VGE = 15 V,

I

C

T

= 125oC

C

V

= 30 V, VGE = 0 V,

CE

f = 1 MHz

-2.0- V

- 5090 - pF

-34-ns Rise Time - 63 - ns Turn-Off Delay Time - 172 - ns Fall Time - 107 - ns Turn-On Switching Loss - 2.5 - mJ

= 600 V, IC = 35 A,

V

CC

R

= 10 , V

G

GE

Inductive Load, T

= 15 V,

= 25oC

C

Turn-Off Switching Loss - 1.7 - mJ

Turn-On Delay Time

-33-ns Rise Time - 66 - ns Turn-Off Delay Time - 180 - ns Fall Time - 146 - ns Turn-On Switching Loss - 3.1 - mJ

= 600 V, IC = 35 A,

V

CC

R

= 10 , V

G

Inductive Load, T

GE

= 15 V,

= 125oC

C

Turn-Off Switching Loss - 2.1 - mJ

Total Gate Charge

V

= 600 V, IC = 35 A,

Gate to Emitter Charge - 42 - nC Gate to Collector Charge - 101 - nC

CE

V

= 15 V

GE

- 210 - nC

FGL35N120FTD Rev. C1

FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT

Electrical Characteristics of the Diode T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max Unit

T

= 25oC- 2.7 3.4

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage IF = 35 A

Diode Reverse Recovery Time

I

= 35 A,

Diode Peak Reverse Recovery Current

F

di

/dt = 200 A/s

F

Diode Reverse Recovery Charge

C

= 125oC- 2.5 -

T

C

= 25oC - 337 -

T

C

= 125oC - 520 -

T

C

T

= 25oC- 7.6 -

C

= 125oC

T

C

T

= 25oC - 1292 -

C

= 125oC - 3377 -

T

C

- 12.9 -

V

ns

A

nC

FGL35N120FTD Rev. C1

FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT

02468

0

30

60

90

120

150

180

17V

9V

20V

TC = 25oC

15V

12V

10V

VGE = 8V

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

02468

0

30

60

90

120

150

180

9V

17V

20V

TC = 125oC

15V

12V

10V

VGE = 8V

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

01234

0

20

40

60

80

100

120

Common Emitter VGE = 15V

TC = 25oC TC = 125oC

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

4681012

0

20

40

60

80

100

120

Common Emitter VCE = 20V

TC = 25oC TC = 125oC

Collector Current, I

C

[A]

Gate-Emitter Voltage,VGE [V]

25 50 75 100 125

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

35A

70A

IC = 18A

Common Emitter VGE = 15V

Collector-Emitter Vo ltage, V

CE

[V]

4 8 12 16 20

0

4

8

12

16

20

IC = 18A

35A

70A

Common Emitter TC = 25oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Vo ltage , VGE [V]

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V

GE

Temperature at Variant Current Level

Case Temperature, TC [oC]

FGL35N120FTD Rev. C1

Typical Performance Characteristics

4 8 12 16 20

0

4

8

12

16

20

70A

IC = 18A

35A

Common Emitter TC = 125oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage, VGE [V]

1 10 100 1000

0

30

60

90

120

150

VCC = 600V load Current : peak of square wave

Duty cycle : 50% TC = 100

o

C

Power Dissipation = 14 7W

110

0

2000

4000

6000

8000

Common Emitter VGE = 0V, f = 1MHz

TC = 25oC

C

res

C

oes

C

ies

Capacitance [pF]

Collector-Emitter Voltage, VCE [V]

30

0 50 100 150 200 250

0

3

6

9

12

15

Common Emitter TC = 25oC

600V

400V

VCC = 200V

Gate-Emitter Voltag e, V

GE

[V]

Gate Ch a r g e , Qg [nC]

1 10 100 1000 4000

0.01

0.1

1

10

100

400

1ms 10 ms

DC

*Notes:

1

. T

C

= 25oC

2

. T

J

= 150oC

3. Single Pulse

10s

100s

Collector Current, I

c

[A]

Collector-Emitter Voltage, VCE [V]

0 1020304050

20

100

200

Common Emitter VCC = 600V, VGE = 15V

IC = 35A TC = 25oC TC = 125oC

t

d(on)

t

r

Switching Time [ns]

Gate Resistance, RG []

Figure 7. Saturation Voltage vs. VGE Figure 8. Load Current vs. Frequency

[A]

C

Collector Current, I

Frequency, f [kHz]

FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT

Figure 9. Capacitance Characteristics

Figure 10. Gate Charge Characteristics

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance

FGL35N120FTD Rev. C1

Typical Performance Characteristics

0 1020304050

50

100

1000

2000

Common Emitter VCC = 600V, VGE = 15V

IC = 35A TC = 25oC TC = 125oC

t

d(off)

t

f

Switching Time [ns]

Gate Resistance, RG []

10 20 30 40 50 60 70

10

100

200

Common Emitter VGE = 15V, RG = 10

TC = 25oC TC = 125oC

t

r

t

d(on)

Switching Time [ns]

Collector Cu rre n t, IC [A]

0 1020304050

0.3

1

8

Common Emit t e r VCC = 600V, VGE = 15V

IC = 35A TC = 25oC TC = 125oC

E

on

E

off

Switching Loss [mJ]

Gate Resistance, RG []

10 20 30 40 50 60 70

50

100

600

Common Emitter VGE = 15V, RG = 10

TC = 25oC TC = 125oC

t

d(off)

t

f

Switching Time [ns]

Collector Current, IC [A]

10 20 30 40 50 60 70

0.3

1

10

Comm o n Emitter VGE = 15V, RG = 10

TC = 25oC TC = 125oC

E

on

E

off

Switching Loss [mJ]

Collector Current, IC [A]

1 10 100 1000 3000

1

10

100

200

Safe Operating Area VGE = 15V, TC = 125oC

Collector Curren t , I

C

[A]

Collector-Emitter Voltage, VCE [V]

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs. Gate Resistance Collector Current

Figure 15. Turn-off Characteristics vs. Figure 16.Switching Loss vs. Gate Resistance  Collector Current

FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching SOA Characteristics

FGL35N120FTD Rev. C1

Typical Performance Characteristics

0.0 0.5 1.0 1.5 2.0 2.5 3.0

1

10

0.2

TJ = 25oC

50

TC = 25oC TC = 125oC

TJ = 125oC

Forward Voltage, VF [V]

Forward Current, I

F

[A]

10 20 30 40

3

4

5

6

7

TC = 25oC

diF/dt = 200A/s

diF/dt = 100A/s

Reverse Recovery Currnet, I

rr

[A]

Forward Current, IF [A]

10 20 30 40

0.6

0.8

1.0

1.2

TC = 25oC

diF/dt = 200A/s

diF/dt = 100A/s

Stored Recovery Charge, Q

rr

[C]

]

10 20 30 40

100

200

300

400

500

TC = 25oC

diF/dt = 200A/s

diF/dt = 100A/s

Reverse Recovery Time, t

rr

[ns]

]

1E-5 0.0001 0.001 0.01 0.1 1 10

0.001

0.01

0.1

1

0.01

0.02

0.1

0.05

0.2

single pulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + T

C

0.5

t

1

P

DM

t

2

Figure 19. Forward Characteristics Figure 20. Reverse Recovery Current

8

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

1.4

600

FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT

Forward Current, IF [A

Figure 23.Transient Thermal Impedance of IGBT

FGL35N120FTD Rev. C1

Forward Current, IF [A

Mechanical Dimensions

FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT

Figure 24. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA

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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

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FGL35N120FTD Rev. C1

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FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The data sheet is for reference information only.

Rev. I66

9

www.fairchildsemi.com

FGL35N120FTD Rev. C1

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Datasheet FGL35N120FTD Specification

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