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tm
FGH60N60UFD
600V, 60A Field Stop IGBT
FGH60N60UFD 600V, 60A Field Stop IGBT
April 2009
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
= 1.9V @ IC = 60A
CE(sat)
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc
tion and switching losses are essential.
Applications
• Induction Heating, UPS, SMPS, PFC
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
P
D
Operating Junction Temperature -55 to +150
T
J
T
stg
T
L
Collector to Emitter Voltage 600 V
Gate to Emitter Voltage ± 20 V
Collector Current @ TC = 25oC120 A
Collector Current @ T
Pulsed Collector Current
Maximum Power Dissipation @ TC = 25oC298 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100oC60 A
C
@ T
= 25oC
C
= 100oC119 W
C
180 A
300
o
C
o
C
o
C
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.33
θJC
(Diode) Thermal Resistance, Junction to Case - 1.1
R
θJC
R
θJA
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGH60N60UFD Rev. A1
Thermal Resistance, Junction to Ambient - 40
o
C/W
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
FGH60N60UFD 600V, 60A Field Stop IGBT
Max Qty
per Box
Device Marking Device Package
Packaging
Type Qty per Tube
FGH60N60UFD FGH60N60UFDTU TO-247 Tube 30ea -
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
∆BV
∆T
J
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V
Temperature Coefficient of Breakdown
CES
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 250µA
GE
CES
GES
-0.67-V/
, VGE = 0V - - 250 µA
, VCE = 0V - - ±400 nA
G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V
= 60A, VGE = 15V -1.92.4V
I
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance - 325 - pF
C
= 60A, VGE = 15V,
I
C
T
= 125oC
C
V
= 30V, VGE = 0V,
CE
f = 1MHz
-2.1- V
- 2855 - pF
Reverse Transfer Capacitance - 110 - pF
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 2.62 - mJ
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 3.15 - mJ
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time - 58 - ns
Turn-Off Delay Time - 130 - ns
Fall Time - 40 80 ns
Turn-On Switching Loss - 1.81 - mJ
= 400V, IC = 60A,
V
CC
R
= 5Ω, V
G
Inductive Load, T
GE
= 15V,
= 25oC
C
Turn-Off Switching Loss - 0.81 - mJ
Turn-On Delay Time
Rise Time - 61 - ns
Turn-Off Delay Time - 141 - ns
Fall Time - 63 - ns
Turn-On Switching Loss - 1.92 - mJ
= 400V, IC = 60A,
V
CC
R
= 5Ω, V
G
Inductive Load, T
GE
= 15V,
= 125oC
C
Turn-Off Switching Loss - 1.23 - mJ
Total Gate Charge
V
= 400V, IC = 60A,
Gate to Emitter Charge - 21 - nC
Gate to Collector Charge - 97 - nC
CE
V
= 15V
GE
-23-ns
-22-ns
- 188 - nC
FGH60N60UFD Rev. A1
2 www.fairchildsemi.com
Page 3
FGH60N60UFD 600V, 60A Field Stop IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max Units
T
= 25oC- 2.0 2.6
V
FM
t
rr
Q
rr
Diode Forward Voltage IF = 30A
Diode Reverse Recovery Time
= 30A, dIES/dt = 200A/µs
I
ES
Diode Reverse Recovery Charge
C
= 125oC- 1.8 -
T
C
T
= 25oC- 47 -
C
= 125oC - 179 -
T
C
T
= 25oC- 83 -
C
= 125oC - 567 -
T
C
nC
V
ns
FGH60N60UFD Rev. A1
3 www.fairchildsemi.com
Page 4
FGH60N60UFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
[A]
C
180
150
120
TC = 25oC
20V
15V
12V
10V
[A]
C
180
150
120
TC = 125oC
20V
12V
15V
10V
90
60
Collector Current, I
30
0
02468
VGE = 8V
Collector-Emitter Voltage, VCE [V]
90
60
VGE = 8V
Collector Current, I
30
0
02468
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
180
Common Emitter
VGE = 15V
150
TC = 25oC
[A]
TC = 125oC
C
120
90
60
Collector Current, I
30
0
012345
Collector-Emitter Voltage, VCE [V]
180
Common Emitter
VCE = 20V
150
TC = 25oC
[A]
TC = 125oC
C
120
90
60
Collector Current, I
30
0
012345
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
4.0
Common Emitter
VGE = 15V
[V]
3.5
CE
3.0
2.5
2.0
1.5
Collector-Emitter Vo ltage, V
1.0
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
FGH60N60UFD Rev. A1
120A
60A
IC = 30A
20
[V]
CE
16
12
8
4
Collector-Emitter Voltage, V
0
0369121518
60A
IC = 30A
Gate-Emitter Vo ltage , VGE [V]
4 www.fairchildsemi.com
GE
Common Emitter
TC = -40oC
120A
Page 5
Typical Performance Characteristics
FGH60N60UFD 600V, 60A Field Stop IGBT
Figure 7. Saturation Voltage vs. V
20
[V]
CE
16
12
8
4
60A
Collector-Emitter Voltage, V
0
0369121518
IC = 30A
Gate-Emitter Vo ltage , VGE [V]
Common Emitter
TC = 25oC
120A
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Capacitance [pF]
6000
4000
2000
C
ies
C
oes
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Figure 8. Saturation Voltage vs. V
GE
20
[V]
16
CE
12
8
4
Collector-Emitter Voltage, V
0
0369121518
60A
IC = 30A
Gate-Emitter Voltage, VGE [V]
15
Common Emitter
TC = 25oC
12
[V]
GE
VCC = 100V
9
6
GE
Common Emitter
TC = 125oC
120A
300V
200V
3
C
res
0
110
30
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, V
0
0 50 100 150 200
Gate Ch a r g e , Qg [nC]
Figure 11. SOA Characteristics Figure 12. Turn off Switching SOA Characteristics
500
100
[A]
c
10
1
Single Nonrepetitive
= 25oC
Pulse T
Collector Current, I
0.1
0.01
1 10 100 1000
C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, VCE [V]
100µs
1ms
10 ms
DC
10µs
300
100
[A]
C
10
Collector Current , I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
FGH60N60UFD Rev. A1
5 www.fairchildsemi.com
Page 6
Typical Performance Characteristics
FGH60N60UFD 600V, 60A Field Stop IGBT
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
300
100
Switching Time [ns]
10
t
r
Common Emitter
VCC = 400V, VGE = 15V
t
d(on)
IC = 60A
TC = 25oC
TC = 125oC
0 1020304050
Gate Resistance, RG [Ω]
6000
1000
100
Switching Time [ns]
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
t
d(off)
t
f
10
0 1020304050
Gate Resistance, RG [Ω]
Figure 15. Turn-on Characteristics vs. Figure 16. Turn-off Characteristics vs.
Collector Current Collector Current
500
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
100
t
r
1000
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
t
d(off)
100
Switching Time [ns]
10
0 20406080100120
t
d(on)
Collector Current, IC [A]
Switching Time [ns]
t
f
30
0 20406080100120
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current
20
Common Emitter
VCC = 400V, VGE = 15V
10
IC = 60A
TC = 25oC
TC = 125oC
E
on
Switching Loss [mJ]
1
E
off
0 1020304050
Gate Resistance, RG [Ω]
20
Common Emitter
VGE = 15V, RG = 5Ω
10
TC = 25oC
TC = 125oC
E
on
E
off
1
Switching Loss [mJ]
0.1
0 20406080100120
Collector Current, IC [A]
FGH60N60UFD Rev. A1
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Reverse Current
200
500
FGH60N60UFD 600V, 60A Field Stop IGBT
100
[A]
F
TJ = 125oC
TJ = 25oC
10
TJ = 75oC
Forward Current, I
1
01234
TC = 25oC
TC = 125oC
Forward Voltage, VF [V]
100
[µA]
10
R
TC = 125oC
TC = 75oC
1
0.1
Reverse Current , I
0.01
0 200 400 600
TC = 25oC
Reverse Voltage, VR [V]
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
100
[nC]
rr
80
200A/µs
60
di/dt = 100 A/µs
60
[ns]
rr
200A/µs
50
di/dt = 100 A/µs
40
Stored Recovery C harge, Q
40
5204060
Forward Current, IF [A]
Reverse Recovery Time, t
30
5204060
Forward Current, IF [A]
Figure 23. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
Thermal Response [Zthjc]
single pulse
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
P
DM
t
1
t
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
2
C
FGH60N60UFD Rev. A1
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
FGH60N60UFD 600V, 60A Field Stop IGBT
FGH60N60UFD Rev. A1
8 www.fairchildsemi.com
Page 9
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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Rev. I40
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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