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IGBT - Field Stop
600 V, 60 A
FGH60N60SMD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
Features
• Maximum Junction Temperature: T
• Positive Temperature Co−efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching: E
• Tightened Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
nd
generation IGBTs offer the optimum
= 175°C
J
= 1.9 V (Typ.) @ IC = 60 A
CE(sat)
= 7.5 uJ/A
OFF
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V
CES
600 V 60 A
G
I
C
C
E
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH60N60
SMD
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH60N60SMD = Specific Device Code
© Semiconductor Components Industries, LLC, 2010
January, 2020 − Rev. 3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1 Publication Order Number:
FGH60N60SMD/D
Page 2
FGH60N60SMD
ABSOLUTE MAXIMUM RATINGS
Symbol Description Ratings Unit
V
CES
V
GES
I
C
I
(Note 1) Pulsed Collector Current 180 A
CM
I
F
I
(Note 1) Pulsed Diode Maximum Forward Current 180 A
FM
P
D
T
J
T
STG
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
Collector to Emitter Voltage 600 V
Gate to Emitter Voltage ±20 V
Transient Gate to Emitter Voltage ±30 V
Collector Current
Diode Forward Current
Maximum Power Dissipation
TC = 25°C 120 A
T
= 100°C 60 A
C
T
= 25°C 60 A
C
T
= 100°C 30 A
C
T
= 25°C 600 W
C
T
= 100°C 300 W
C
Operating Junction Temperature −55 to +175 °C
Storage Temperature Range −55 to +175 °C
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C
THERMAL CHARACTERISTICS
Symbol Parameter Typ. Max. Unit
R
(IGBT)
q
JC
R
(Diode)
q
JC
R
q
JA
Thermal Resistance, Junction to Case − 0.25
Thermal Resistance, Junction to Case − 1.1
Thermal Resistance, Junction to Ambient − 40
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Part Number Top Mark Package
FGH60N60SMD FGH60N60SMD TO−247 Tube N/A N/A 30
Method
Reel Size Tape Width
_C/W
_C/W
_C/W
Qty per
Tube
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2
Page 3
FGH60N60SMD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T
Symbol
Parameter Test Conditions Min. Typ. Max. Unit
= 25°C unless otherwise noted)
C
OFF CHARACTERISTICS
DBV
BV
CES
I
CES
I
GES
CES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown Voltage
/ DT
J
Collector Cut−Off Current V
G−E Leakage Current V
V
GE
= 0 V, I
= 250 mA
C
VGE = 0 V, IC = 250 mA
CE
GE
= V
= V
CES
GES
, V
= 0 V − − 250
GE
, V
= 0 V − − ±400 nA
CE
600 − − V
− 0.6 − V/°C
mA
ON CHARACTERISTICS
V
GE(th)
V
CE(sat)
G−E Threshold Voltage
Collector to Emitter Saturation Voltage
I
= 250 mA, V
C
I
= 60 A, V
C
I
= 60 A, V
C
T
= 175°C
C
= V
CE
GE
= 15 V, − 1.9 2.5 V
GE
= 15 V,
GE
3.5 4.5 6.0 V
− 2.1 −
V
DYNAMIC CHARACTERISTICS
V
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance − 270 − pF
Reverse Transfer Capacitance − 85 − pF
= 30 V, V
CE
f = 1 MHz
GE
= 0 V,
− 2915 − pF
SWITCHING CHARACTERISTICS
T
T
T
T
d(on)
T
d(off)
T
E
on
E
off
E
d(on)
T
d(off)
T
E
on
E
off
E
Q
Q
Q
V
Turn−On Delay Time
r
Rise Time − 47 70 ns
= 400 V, I
CC
= 3 W, V
R
G
Inductive Load, T
Turn−Off Delay Time − 104 146 ns
f
Fall Time − 50 68 ns
Turn−On Switching Loss − 1.26 1.94 mJ
Turn−Off Switching Loss − 0.45 0.6 mJ
ts
r
Total Switching Loss − 1.71 2.54 mJ
V
Turn−On Delay Time
Rise Time − 41 − ns
= 400 V, I
CC
= 3 W, V
R
G
Inductive Load, T
Turn−Off Delay Time − 115 − ns
f
Fall Time − 48 − ns
Turn−On Switching Loss − 2.1 − mJ
Turn−Off Switching Loss − 0.78 − mJ
ts
g
ge
gc
Total Switching Loss − 2.88 − mJ
V
Total Gate Charge
Gate to Emitter Charge − 20 30 nC
CE
V
GE
= 400 V, I
= 15 V
Gate to Collector Charge − 91 137 nC
GE
GE
= 60 A,
C
= 15 V,
C
= 60 A,
C
= 15 V,
C
= 60 A,
C
= 25°C
= 175°C
− 18 27 ns
− 18 − ns
− 189 284 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
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FGH60N60SMD
ELECTRICAL CHARACTERISTICS OF THE DIODE (T
Symbol
V
FM
E
rec
T
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter Test Conditions Min Typ Max Unit
= 25°C unless otherwise noted)
C
I
= 30 A
F
I
= 30 A,
F
/dt = 200 A/ms
di
F
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
= 175°C
= 175°C
= 25°C
= 175°C
= 25°C
= 175°C
− 2.1 2.7
− 1.7 −
− 79 −
− 30 39
− 72 −
− 44 62
− 238 −
V
uJ
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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FGH60N60SMD
24681012
0
30
60
90
120
150
180
TYPICAL PERFORMANCE CHARACTERISTICS
180
TC = 25oC
150
(A)
C
120
90
60
Collector Current, I
30
0
0246
20V
15V
12V
10V
VGE = 8V
Collector−Emitter Voltage, VCE (V)
Figure 1. Typical Output Characteristics
180
Common Emitter
VGE = 15V
150
(A)
TC = 25oC
C
TC = 175oC
120
90
(A)
C
180
TC = 175oC
150
120
90
60
20V
15V
12V
10V
VGE = 8V
Collector Current, I
30
0
0246
Collector−Emitter Voltage, VCE (V)
Figure 2. Typical Output Characteristics
Common Emitter
VCE = 20V
TC = 25oC
(A)
TC = 175oC
C
60
Collector Current, I
30
0
01 3425
Collector−Emitter Voltage, VCE (V)
Figure 3. Typical Saturation
Voltage Characteristics
3.5
Common Emitter
VGE = 15V
(V)
CE
3.0
120A
2.5
2.0
1.5
Collector−Emitter Voltage, V
1.0
50 75 125 150100 17525
60A
IC = 30A
Case Temperature, TC (5C)
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector Current, I
Gate−Emitter Voltage,VGE (V)
Figure 4. Transfer Characteristics
20
(V)
16
CE
12
8
60A
4
IC = 30A
Collector−Emitter Voltage, V
0
4 8 12 16 20
120A
Gate−Emitter Voltage, VGE (V)
Common Emitter
TC = −40oC
Figure 6. Saturation Voltage vs. V
GE
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FGH60N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
20
(V)
CE
16
12
8
60A
4
IC = 30A
Collector−Emitter Voltage, V
0
4 8 12 16 20
120A
Common Emitter
TC = 25oC
Gate−Emitter Voltage, VGE (V)
Figure 7. Saturation Voltage vs. V
7000
Common Emitter
6000
5000
4000
3000
Capacitance (pF)
2000
1000
0
0.1110
Collector−Emitter Voltage, V
VGE = 0V, f = 1MHz
TC = 25oC
C
ies
C
oes
C
res
CE
(V)
GE
20
(V)
CE
16
12
8
60A
4
Collector−Emitter Voltage, V
IC = 30A
0
4 8 12 16 20
120A
Common Emitter
TC = 175oC
Gate−Emitter Voltage, VGE(V)
Figure 8. Saturation Voltage vs. V
15
Common Emitter
TC = 25oC
(V)
12
GE
9
VCC = 200V
300V
400V
GE
6
3
Gate−Emitter Voltage, V
0
30
0 40 80 120 160 200
Gate Charge, Qg(nC)
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
300
100
(A)
C
10
10 ms
DC
1ms
100
ms
1
*Notes:
0.1
Collector Current, I
0.01
= 25 5C
1.T
C
= 175 5C
2.T
J
3. Single Pulse
1 10 100 1000
Collector−Emitter Voltage, VCE (V)
Figure 11. SOA Characteristics
ms
10
100
80
t
r
60
40
t
d(on)
Common Emitter
20
Switching Time (ns)
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
10
010 304020 50
Gate Resistance, RG (W)
Figure 12. Turn−on Characteristics
vs. Gate Resistance
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FGH60N60SMD
0 306090120
1
10
100
0 1020304050
0.1
1
5
10
300
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
6000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
1000
TC = 175oC
t
d(off)
100
t
f
Switching Time (ns)
10
0 1020304050
Gate Resistance, R
(W)
G
Figure 13. Turn−off Characteristics
vs. Gate Resistance
1000
t
d(off)
t
f
Switching Time (ns)
Common Emitter
VGE = 15V, RG = 3
TC = 25oC
TC = 175oC
1000
100
10
Common Emitter
VGE = 15V, RG = 3
TC = 25oC
TC = 175oC
W
t
r
t
d(on)
Switching Time (ns)
1
0 306090120
Collector Current, I
(A)
C
Figure 14. Turn−on Characteristics
vs. Collector Current
E
on
E
W
Switching Loss (mJ)
off
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 175oC
Collector Current, I
C
Figure 15. Turn−off Characteristics vs.
Collector Current
E
on
1
E
off
0.1
Switching Loss (mJ)
0.01
0306090120
Collector Current, I
Common Emitter
VGE = 15V, RG = 3
TC = 25oC
TC = 175oC
C
Figure 17. Switching Loss vs. Collector Current
(A)
(A)
W
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Gate Resistance, R
(W)
G
Figure 16. Switching Loss vs.
Gate Resistance
100
(A)
C
10
Collector Current, I
1
1 10 100 1000
Safe Operating Area
VGE = 15V, TC = 175oC
Collector−Emitter Voltage, VCE (V)
Figure 18. Turn Off Switching SOA Characteristics
7
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FGH60N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
130
Common Emitter
VGE = 15V
(A)
C
120
110
100
90
80
70
60
50
40
30
Collector Current, I
20
10
25 50 75 100 125 150 175
Case Temperature, T
o
(5C)
C
Figure 19. Current Derating Figure 20. Load Current vs. Frequency
200
100
TC = 175oC
(A)
F
TC = 125oC
10
Forward Current, I
1
01234
Forward Voltage, V
TC = 75oC
TC = 25oC
TC = 25oC
TC = 75oC −−−−
TC = 125oC −−−−
TC = 175oC
(V)
F
180
Square Wave
TJ < 175oC,D = 0.5,VCE = 400V
VGE = 15/0V, RG = 3
(A)
C
160
140
120
100
Tc = 75oC
80
60
Collector Current, I
40
Tc = 100oC
20
0
1k 10k 100k 1M
Switching Frequency, f (Hz)
10000
TC = 175oC
1000
(mA)
100
R
TC = 125oC
10
TC = 75oC
1
0.1
Reverse Current, I
0.01
0 100 200 300 400 500 600
TC = 25oC
Reverse Voltage, V
R
W
(V)
Figure 21. Forward Characteristics Figure 22. Reverse Current
350
TC = 25oC
300
TC = 175oC −−−−
(nC)
rr
250
200
150
100
diF/dt = 200A/
diF/dt = 100A/
ms
ms
50
Stored Recovery Charge, Q
0
0102030405060
Forward Current, I
(A)
F
Figure 23. Stored Charge Figure 24. Reverse Recovery Time
(ns)
rr
Reverse Recovery Time, T
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100
TC = 25oC
90
TC = 175oC −−−−
80
70
60
50
diF/dt = 200A/
diF/dt = 100A/
ms
ms
40
30
20
0102030405060
Forward Current, I
(A)
F
Page 9
FGH60N60SMD
0.5
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
single pulse
Thermal Response (Zthjc)
1E−3
1E−51E−41E−3 0.01 0.1 1
Rectangular Pulse Duration (sec)
Figure 25. Transient Thermal Impedance of IGBT
5
1
111
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
Thermal Response (Zthjc)
1E−3
1E−51E−41E−3 0.01 0.1 1
Rectangular Pulse Duration (sec)
P
DM
t
1
t
Duty Factor, D = t1/t2
= Pdm x Zthjc + T
Peak T
j
P
DM
t
Duty Factor, D = t1/t2
Peak T
= Pdm x Zthjc + T
j
2
C
1
t
2
C
Figure 26. Transient Thermal Impedance of Diode
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Page 10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
A
E2
L1
b4
(2X) b2
(2X) e
E
2
13
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
Q
(3X) b
D
L
0.25
A
A2
B
P
S
E1
P1
D2
D1
2
A1
c
M
BA
M
DIM
MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81
P 3.51 3.58
3.93
3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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© Semiconductor Components Industries, LLC, 2018
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