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IGBT - Field Stop
600 V, 60 A
FGH60N60SFD
Description
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching
losses are essential.
Features
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
• This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
= 2.3 V @ IC = 60 A
CE(sat)
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C
G
E
E
COLLECTOR
TO−247−3LD
CASE 340CK
C
G
G
(FLANGE)
MARKING DIAGRAM
$Y&Z&3&K
FGH60N60
SFD
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH60N60SFD= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
February, 2020 − Rev. 2
1 Publication Order Number:
FGH60N60SFD/D
Page 2
FGH60N60SFD
ABSOLUTE MAXIMUM RATINGS (T
Description
Collector to Emitter Voltage V
Gate to Emitter Voltage
= 25°C unless otherwise noted)
C
Symbol Ratings Unit
600 V
±20
V
V
CES
GES
Transient Gate−to−Emitter Voltage ±30
Collector Current TC = 25°C
I
C
120 A
Collector Current TC = 100°C 60 A
Pulsed Collector Current TC = 25°C I
Maximum Power Dissipation TC = 25°C
(Note 1) 180 A
CM
P
D
378 W
Maximum Power Dissipation TC = 100°C 151 W
Operating Junction Temperature T
Storage Temperature Range T
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds T
J
stg
L
−55 to +150 °C
−55 to +150 °C
300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive test, Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
JC
JC
(IGBT)
(Diode)
R
JA
− 0.33 °C/W
− 1.1 °C/W
− 40 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH60N60SFDTU FGH60N60SFD TO−247 Tube N/A N/A 30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T
Parameter
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage BV
Temperature Coefficient of Breakdown
Voltage
Collector Cut−Off Current I
G−E Leakage Current I
ON CHARACTERISTICs
G−E Threshold Voltage V
Collector to Emitter Saturation Voltage V
Symbol Test Conditions Min Ty p Max Unit
CES
BV
/TJVGE = 0 V, IC = 250 A
CES
CES
GES
GE(th)
CE(sat)
= 25°C unless otherwise noted)
C
VGE = 0 V, IC = 250 A
600 − − V
− 0.4 − V/°C
VCE = V
VGE = V
IC = 250 A, VCE = V
, VGE = 0 V − − 250
CES
, VCE = 0 V − − ±400 nA
GES
GE
4.0 5.0 6.5 V
IC = 60 A, VGE = 15 V − 2.3 2.9 V
IC = 60 A, VGE = 15 V, TC = 125°C − 2.5 − V
A
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FGH60N60SFD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T
Parameter UnitMaxTypMinTest ConditionsSymbol
DYNAMIC CHARACTERISTICS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t
Turn−On Switching Loss E
Turn−Off Switching Loss E
Total Switching Loss E
Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t
Turn−On Switching Loss E
Turn−Off Switching Loss E
Total Switching Loss E
Total Gate Charge Q
Gate to Emitter Charge Q
Gate to Collector Charge Q
t
d(on)
d(off)
d(on)
d(off)
ies
oes
res
r
f
on
off
ts
r
f
on
off
ts
g
ge
gc
= 25°C unless otherwise noted) (continued)
C
VCE = 30 V, VGE = 0 V, f = 1 MHz
VCC = 400 V, IC = 60 A,
= 5 VGE = 15 V,
R
G
Inductive Load, TC = 25°C
VCC = 400 V, IC = 60 A,
= 5 VGE = 15 V,
R
G
Inductive Load, T
= 125°C
C
VCE = 400 V, IC = 60 A, VGE = 15 V
− 2820 − pF
− 350 − pF
− 140 − pF
− 22 − ns
− 42 − ns
− 134 − ns
− 31 62 ns
− 1.79 − mJ
− 0.67 − mJ
2.46 − mJ
− 22 − ns
− 44 − ns
− 144 − ns
− 43 − ns
− 1.88 − mJ
− 1.0 − mJ
− 2.88 − mJ
− 198 − nC
− 22 − nC
− 106 − nC
ELECTRICAL CHARACTERISTICS OF THE DIODE (T
= 25°C unless otherwise noted)
J
Symbol Parameter Test Conditions Min Typ Max Unit
V
FM
Diode Forward Voltage IF = 30 A
TC = 25°C − 2.0 2.6
V
TC = 125°C − 1.8 −
t
rr
Diode Reverse Recovery Time
IF = 30 A, diF/dt = 200 A/s TC = 25°C − 47 −
ns
TC = 125°C − 179 −
Q
rr
Diode Reverse Recovery Charge
TC = 25°C − 83 −
nC
TC = 125°C − 567 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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Page 4
FGH60N60SFD
TYPICAL PERFORMANCE CHARACTERISTICS
180
[A]
C
TC = 25°C
150
120
20 V
15 V
12 V
10 V
90
60
Collector Current, I
VGE = 8 V
30
0
02468
Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics
180
Common Emitter
V
= 15 V
90
GE
TC = 25°C
TC = 125°C
[A]
C
150
120
180
[A]
C
TC = 125°C
150
120
20 V
12 V
15 V
10 V
90
60
VGE = 8 V
Collector Current, I
30
0
0
24 6 8
Collector−Emitter Voltage, VCE [V]
Figure 2. Typical Output Characteristics
180
Common Emitter
V
= 20 V
90
CE
TC = 25°C
= 125°C
T
C
[A]
C
150
120
60
Collector Current, I
30
0
01
23
45
Collector−Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
4.0
Common Emitter
3.5
VGE = 15 V
120 A
[V]
CE
3.0
2.5
60 A
2.0
1.5
Collector−Emitter Voltage, V
1.0
25 50 75 100
IC = 30 A
125
Collector−Emitter Case Temperature, TC [°C]
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
60
Collector Current, I
30
0
012345
Gate−Emitter Voltage, VGE [V]
Figure 4. Transfer Characteristics
20
[V]
16
CE
12
8
4
Collector−Emitter Voltage, V
0
04
60 A
IC = 30 A
Gate−Emitter Voltage, VGE [V]
Common Emitter
T
= −40°C
C
120 A
8121620
Figure 6. Saturation Voltage vs V
GE
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FGH60N60SFD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
20
Common Emitter
T
= 25°C
[V]
CE
16
C
12
8
120 A
4
Collector−Emitter Voltage, V
0
04 812
Figure 7. Saturation Voltage vs. V
60 A
IC = 30 A
16
Gate−Emitter Voltage, VGE [V]
GE
6000
Common Emitter
V
= 0 V, f = 1 MHz
5000
4000
GE
= 25°C
T
C
C
ies
3000
C
Capacitance [pF]
2000
1000
oes
C
res
110
Collector−Emitter Voltage, V
CE
[V]
Figure 9. Capacitance Characteristics
20
30
[V]
CE
20
16
Common Emitter
T
= 125°C
C
12
8
60 A
120 A
4
Collector−Emitter Voltage, V
IC = 30 A
0
0
4812
Gate−Emitter Voltage, VGE [V]
Figure 8. Saturation Voltage vs. V
15
Common Emitter
T
= 25°C
C
12
[V]
GE
VCC = 100 V
9
200 V
6
3
Gate−Emitter Voltage, V
0
0
50 100 150 200
Gate Charge, Qg [nC]
Figure 10. Gate Charge Characteristics
16 20
GE
300 V
500
100
[A]
C
10
1
Single Nonrepetitive
Collector Current, I
Pulse T
0.1
Curves must be derated
linearly with increase
in temperature.
0.01
1
Collector−Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
= 25°C
C
10
10 s
100 s
1 ms
10 ms
DC
100 1000
[A]
C
Collector Current, I
Figure 12. Turn−Off Switching SOA Characteristics
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5
300
100
10
Safe Operating Area
VGE = 15 V, TC = 125°C
1
110
Collector−Emitter Voltage, VCE [V]
100 1000
Page 6
FGH60N60SFD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
300
100
t
r
Switching Time [ns]
t
d(on)
Common Emitter
V
= 400 V, VGE = 15 V
CC
IC = 60 A
TC = 25°C
T
= 125°C
10
10020304050
C
Gate Resistance, RG []
Figure 13. Turn−On Characteristics
vs. Gate Resistance
500
Common Emitter
= 15 V, RG = 5
V
GE
= 25°C
T
C
TC = 125°C
100
6000
Common Emitter
VCC = 400 V, VGE = 15 V
I
= 60 A
C
TC = 25°C
1000
T
= 125°C
C
t
d(off)
100
t
Switching Time [ns]
10
0
10 20 30 40
f
50
Gate Resistance, RG []
Figure 14. Turn−Off Characteristics
vs. Gate Resistance
Common Emitter
= 15 V, RG = 5
V
GE
TC = 25°C
TC = 125°C
t
t
r
100
d(off)
t
Switching Time [ns]
10
2 20 40 60 80 100 120
Collector Current, I
d(on)
[A]
C
Figure 15. Turn−On Characteristics
vs. Collector Current
20
10
Common Emitter
= 400 V, VGE= V
V
CC
IC = 60 A
= 25°C
T
C
T
= 125°C
C
E
on
Switching Loss [mJ]
0.5
1
0
E
off
10 20 30 40 50
Gate Resistance, RG []
Figure 17. Switching Loss vs. Gate Resistance
Switching Time [ns]
t
f
10
020
40 60 80 100 120
Collector Current, IC [A]
Figure 16. Turn−Off Characteristics
vs. Collector Current
30
Common Emitter
10
TC = 125°C
1
E
on
E
off
= 15 V, RG = 5
V
GE
TC = 25°C
Switching Loss [mJ]
0.1
0
20 40
60 80
100
Collector Current, IC [A]
Figure 18. Switching Loss vs. Collector Current
120
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FGH60N60SFD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
200
100
[A]
F
TJ = 125°C
10
TJ = 75°C
Forward Current, I
1
0
12 34
Forward Voltage, VF [V]
Figure 19. Forward Characteristics
10
0
[nC]
rr
80
200 A/s
TJ = 25°C
TC = 25°C
T
= 125°C
C
500
100
[A]
R
10
1
Reverse Current, I
0.1
0.01
0
Figure 20. Reverse Current
60
[ns]
rr
50
TC = 125°C
TC = 75°C
TC = 25°C
200 400 600
Reverse Voltage, V
[V]
R
200 A/s
di/dt = 100 A/s
60
diF/dt = 100 A/s
Stored Recovery Charge, Q
40
5
20 40
Forward Current, IF [A]
Figure 21. Stored Charge
0.1
0.01
Thermal Response [Zjc]
1E−3
40
Reverse Recovery Time, t
TC = 25°C
30
60
520 40
Forward Current, I
Figure 22. Reverse Recovery Time
1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
Duty Factor, D = t1/t2
= Pdm x Zjc + T
Peak T
j
1E−51E−41E−3 0.01 0.1
Rectangular Pulse Duration [sec]
Figure 23. Transient Thermal Impedance of IGBT
60
[A]
F
C
1
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Page 8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
A
E2
L1
b4
(2X) b2
(2X) e
E
2
13
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
Q
(3X) b
D
L
0.25
A
A2
B
P
S
E1
P1
D2
D1
2
A1
c
M
BA
M
DIM
MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81
P 3.51 3.58
3.93
3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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