Page 1
IGBT - Field Stop
600 V, 40 A
FGH40N60SF
Description
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching
losses are essential.
Features
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching: E
= 8 J/A
OFF
• This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
= 2.3 V @ IC = 40 A
CE(sat)
www.onsemi.com
C
G
E
E
COLLECTOR
TO−247−3LD
CASE 340CK
C
G
G
(FLANGE)
MARKING DIAGRAM
$Y&Z&3&K
FGH40N60
SF
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH40N60SF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
February, 2020 − Rev. 2
1 Publication Order Number:
FGH40N60SF/D
Page 2
FGH40N60SF
ABSOLUTE MAXIMUM RATINGS (T
Description
Collector to Emitter Voltage V
Gate to Emitter Voltage
= 25°C unless otherwise noted)
C
Symbol Ratings Unit
600 V
±20
V
V
CES
GES
Transient Gate−to−Emitter Voltage ±30
Collector Current TC = 25°C
I
C
80 A
Collector Current TC = 100°C 40 A
Pulsed Collector Current TC = 25°C I
Maximum Power Dissipation TC = 25°C
(Note 1) 120 A
CM
P
D
290 W
Maximum Power Dissipation TC = 100°C 116 W
Operating Junction Temperature T
Storage Temperature Range T
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds T
J
stg
L
−55 to +150 °C
−55 to +150 °C
300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
(IGBT)
JC
R
JA
− 0.43 °C/W
− 40 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Packing Method Reel Size Tape Width Quantity
FGH40N60SFTU FGH40N60SF TO−247 Tube N/A N/A 30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T
Parameter
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage BV
Temperature Coefficient of Breakdown
Voltage
Collector Cut−Off Current I
G−E Leakage Current I
ON CHARACTERISTICs
G−E Threshold Voltage V
Collector to Emitter Saturation Voltage V
Symbol Test Conditions Min Typ Max Unit
CES
BV
/TJVGE = 0 V, IC = 250 A
CES
CES
GES
GE(th)
CE(sat)
= 25°C unless otherwise noted)
C
VGE = 0 V, IC = 250 A
600 − − V
− 0.6 − V/°C
VCE = V
VGE = V
IC = 250 A, VCE = V
, VGE = 0 V − − 250
CES
, VCE = 0 V − − ±400 nA
GES
GE
4.0 5.0 6.5 V
IC = 40 A, VGE = 15 V − 2.3 2.9 V
IC = 40 A, VGE = 15 V, TC = 125°C − 2.5 − V
A
www.onsemi.com
2
Page 3
FGH40N60SF
ELECTRICAL CHARACTERISTICS OF THE IGBT (T
= 25°C unless otherwise noted) (continued)
C
Parameter UnitMaxTypMinTest ConditionsSymbol
DYNAMIC CHARACTERISTICS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
ies
oes
res
VCE = 30 V, VGE = 0 V, f = 1 MHz
− 2110 − pF
− 200 − pF
− 60 − pF
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
Rise Time t
Turn−Off Delay Time t
Fall Time t
Turn−On Switching Loss E
Turn−Off Switching Loss E
Total Switching Loss E
Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t
Turn−On Switching Loss E
Turn−Off Switching Loss E
Total Switching Loss E
Total Gate Charge Q
Gate to Emitter Charge Q
Gate to Collector Charge Q
d(on)
r
d(off)
f
on
off
ts
d(on)
r
d(off)
f
on
off
ts
g
ge
gc
VCC = 400 V, IC = 40 A,
= 10 VGE = 15 V,
R
G
Inductive Load, TC = 25°C
VCC = 400 V, IC = 40 A,
= 10 VGE = 15 V,
R
G
Inductive Load, T
= 125°C
C
VCE = 400 V, IC = 40 A, VGE = 15 V
− 25 − ns
− 42 − ns
− 115 − ns
− 27 54 ns
− 1.13 − mJ
− 0.31 − mJ
1.44 − mJ
− 24 − ns
− 43 − ns
− 120 − ns
− 30 − ns
− 1.14 − mJ
− 0.48 − mJ
− 1.62 − mJ
− 120 − nC
− 14 − nC
− 58 − nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
Page 4
FGH40N60SF
TYPICAL PERFORMANCE CHARACTERISTICS
120
TC = 25°C
[A]
C
100
80
20 V
15 V
60
40
Collector Current, I
20
VGE = 8 V
0
0.0
1.5
3.0 4.5 6.0
Collector−Emitter Voltage, V
CE
Figure 1. Typical Output Characteristics
80
Common Emitter
V
= 15 V
GE
TC = 25°C
TC = 125°C
60
[A]
C
40
12 V
10 V
[V]
120
TC = 125°C
20 V
100
[A]
C
80
60
40
Collector Current, I
20
VGE = 8 V
0
0.0
1.5 3.0 4.5 6.0
Collector−Emitter Voltage, VCE [V]
Figure 2. Typical Output Characteristics
120
Common Emitter
V
= 20 V
CE
= 25°C
T
[A]
C
80
C
TC = 125°C
15 V
12 V
10 V
20
Collector Current, I
0
0
1234
Collector−Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
4.0
[V]
CE
Common Emitter
VGE = 15 V
3.5
80 A
3.0
2.5
40 A
2.0
1.5
IC = 20 A
Collector−Emitter Voltage, V
1.0
25 50 75 100
Case Temperature, T
C
[°C]
125
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
40
Collector Current, I
0
6
8
Gate−Emitter Voltage, VGE [V]
Figure 4. Transfer Characteristics
20
[V]
16
CE
12
8
4
Collector−Emitter Voltage, V
0
IC = 20 A
4
40 A
8
Gate−Emitter Voltage, VGE [V]
Figure 6. Saturation Voltage vs V
10
Common Emitter
T
= −40°C
C
80 A
12
12 13
16 20
GE
www.onsemi.com
4
Page 5
FGH40N60SF
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
20
[V]
16
CE
12
8
4
Collector−Emitter Voltage, V
0
4
Figure 7. Saturation Voltage vs. V
5000
4000
3000
2000
Capacitance [pF]
Common Emitter
T
= 25°C
C
40 A
80 A
IC = 20 A
8
Gate−Emitter Voltage, VGE [V]
12
16
Common Emitter
V
= 0 V, f = 1 MHz
GE
iss
oss
TC = 25°C
C
C
GE
20
20
[V]
16
CE
12
8
40 A
4
Collector−Emitter Voltage, V
0
IC = 20 A
4
8
12 16
Gate−Emitter Voltage, VGE [V]
Figure 8. Saturation Voltage vs. V
15
Common Emitter
T
= 25°C
12
C
VCC = 100 V
9
6
[V]
GE
Common Emitter
T
= 125°C
C
80 A
200 V
300 V
20
GE
1000
0
C
rss
0.1 1 10
Collector−Emitter Voltage, V
Figure 9. Capacitance Characteristics
400
100
[A]
C
10
1
Single Nonrepetitive
Collector Current, I
Pulse T
0.1
Curves must be derated
= 25°C
C
linearly with increase
in temperature.
0.01
1
10
Collector−Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
30
[V]
CE
10 s
100 s
1 ms
10 ms
DC
100 1000
3
Gate−Emitter Voltage, V
0
0 50 100
Gate Charge, Qg [nC]
Figure 10. Gate Charge Characteristics
200
100
t
r
Switching Time [ns]
t
d(on)
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25°C
T
= 125°C
10
010
C
20 30 40
Gate Resistance, RG []
Figure 12. Turn−On Characteristics
vs. Gate Resistance
150
50
www.onsemi.com
5
Page 6
FGH40N60SF
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
5500
1000
100
Switching Time [ns]
10
500
100
Common Emitter
V
= 400 V, VGE = 15 V
CC
IC = 40 A
TC = 25°C
T
= 125°C
C
0
10 20 30 40
t
d(off)
t
f
Gate Resistance, RG []
Figure 13. Turn−Off Characteristics
vs. Gate Resistance
Common Emitter
= 15 V, RG = 10
V
GE
= 25°C
T
C
T
= 125°C
C
t
d(off)
t
f
50
500
Common Emitter
= 15 V, RG = 10
V
GE
T
= 25°C
C
= 125°C
T
C
100
Switching Time [ns]
10
20 40
Figure 14. Turn−On Characteristics
10
Common Emitter
V
= 400 V, VGE = 15 V
CC
IC = 40 A
TC = 25°C
T
= 125°C
C
1
t
d(on)
60 80
Collector Current, IC [A]
vs. Collector Current
t
r
E
on
Switching Time [ns]
10
20
40 60 80
Collector Current, I
[A]
C
Figure 15. Turn−Off Characteristics
vs. Collector Current
30
Common Emitter
= 15 V, RG = 10
V
GE
10
TC = 25°C
TC = 125°C
1
E
on
E
off
Switching Loss [mJ]
0.1
20 30 40 50 60 70
80
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
Switching Loss [mJ]
0.2
10020304050
Gate Resistance, RG []
Figure 16. Switching Loss
vs. Gate Resistance
Load Current [A]
Frequency [kHz]
Figure 18. Load Current vs. Frequency
E
off
www.onsemi.com
6
Page 7
FGH40N60SF
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
200
100
[A]
C
10
Collector Current, I
Safe Operating Area
V
= 15 V, TC = 125°C
GE
1
1
10 100
Collector−Emitter Voltage, VCE [V]
Figure 19. Turn−Off Switching SOA Characteristics
1000
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
Single Pulse
Thermal Response [Zjc]
1E−3
1E−51E−4
P
DM
t1
t2
Duty Factor, D = t1/t2
= Pdm x Zjc + T
Peak T
j
1E−3 0.01 0.1
Rectangular Pulse Duration [sec]
Figure 20. Transient Thermal Impedance of IGBT
C
1
www.onsemi.com
7
Page 8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
A
E2
L1
b4
(2X) b2
(2X) e
E
2
13
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
Q
(3X) b
D
L
0.25
A
A2
B
P
S
E1
2
A1
c
M
BA
M
DIM
MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81
P 3.51 3.58
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
P1
D2
D1
3.93
3.65
PAGE 1 OF 1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
Page 9
onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
Loading...