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FGH40N60SMD
600 V, 40 A Field Stop IGBT
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
October 2014
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching: E
• Tighten Parameter Distribution
• RoHS Compliant
= 6.5 uJ/A
OFF
= 1.9 V(Typ.) @ IC = 40 A
CE(sat)
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
C
G
E
Symbol Description Ratings Unit
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM (1)
P
D
TJ Operating Junction Temperature -55 to +175
T
stg
T
L
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2010 Fairchild Semiconductor Corporation
FGH40N60SMD Rev. C3
Collector to Emitter Voltage 600 V
Gate to Emitter Voltage ± 20 V
Transient Gate to Emitter Voltage ± 30 V
Collector Current @ TC = 25oC 80 A
Collector Current @ TC = 100oC 40 A
Pulsed Collector Current @ TC = 25oC 120 A
Diode Forward Current @ TC = 25oC 40 A
Diode Forward Current @ TC = 100oC 20 A
Pulsed Diode Maximum Forward Current 120 A
Maximum Power Dissipation @ TC = 25oC 349 W
Maximum Power Dissipation @ TC = 100oC 174 W
Storage Temperature Range -55 to +175
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
1
300
o
C
o
C
o
C
www.fairchildsemi.com
Page 3
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
R
(IGBT) Thermal Resistance, Junction to Case - 0.43
θJC
R
(Diode) Thermal Resistance, Junction to Case - 1.5
θJC
R
θJA
Thermal Resistance, Junction to Ambient - 40
Package Marking and Ordering Information
o
C/W
o
C/W
o
C/W
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
Part Number Top Mark Package
Packing
Reel Size Tape Width Quantity
Method
FGH40N60SMD FGH40N60SMD TO-247 Tube N/A N/A 30
Electrical Characteristics of the IGBT
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BV
CES
∆BV
∆T
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 µA 600 - - V
Temperature Coefficient of Breakdown
CES
Voltage
J
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
VGE = 0 V, IC = 250 µA
, VGE = 0 V - - 250 µA
CES
, VCE = 0 V - - ± 400 nA
GES
- 0.6 - V/oC
G-E Threshold Voltage IC = 250 µA, VCE = VGE 3.5 4.5 6.0 V
IC = 40 A, VGE = 15 V
Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V,
TC = 175oC
Input Capacitance
V
= 30 V, VGE = 0 V,
Output Capacitance - 180 - pF
Reverse Transfer Capacitance - 50 - pF
CE
f = 1 MHz
- 1.9 2.5 V
- 2.1 -
- 1880 - pF
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
E
on
off
Turn-On Delay Time
- 12 16 ns
Rise Time - 20 28 ns
Turn-Off Delay Time - 92 120 ns
Fall Time - 13 17 ns
Turn-On Switching Loss - 0.87 1.30 mJ
VCC = 400 V, IC = 40 A,
RG = 6 Ω, V
GE
= 15 V,
Inductive Load, TC = 25oC
Turn-Off Switching Loss - 0.26 0.34 mJ
Ets Total Switching Loss - 1.13 1.64 mJ
t
d(on)
t
r
t
d(off)
t
f
E
E
on
off
Turn-On Delay Time
- 15 - ns
Rise Time - 22 - ns
Turn-Off Delay Time - 116 - ns
Fall Time - 16 - ns
Turn-On Switching Loss - 0.97 - mJ
VCC = 400 V, IC = 40 A,
RG = 6 Ω, V
Inductive Load, TC = 175oC
GE
= 15 V,
Turn-Off Switching Loss - 0.60 - mJ
Ets Total Switching Loss - 1.57 - mJ
©2010 Fairchild Semiconductor Corporation
FGH40N60SMD Rev. C3
2
www.fairchildsemi.com
Page 4
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
Electrical Characteristics of the IGBT
(Continued)
Symbol Parameter Test Conditions Min. Typ. Max Unit
Q
g
Q
ge
Q
gc
Electrical Characteristics of the Diode
Total Gate Charge
Gate to Emitter Charge - 13 20 nC
Gate to Collector Charge - 58 90 nC
VCE = 400 V, IC = 40 A,
VGE = 15 V
TC = 25°C unless otherwise noted
- 119 180 nC
Symbol Parameter Test Conditions Min. Typ. Max Unit
V
FM
E
rec
t
rr
Q
rr
Diode Forward Voltage IF = 20 A
Reverse Recovery Energy
Diode Reverse Recovery Time
IF =20 A, dIF/dt = 200 A/µs
Diode Reverse Recovery Charge
TC = 25oC - 2.3 2.8
TC = 175oC - 1.67 -
TC = 175oC - 48.9 - uJ
TC = 25oC - 36 -
TC = 175oC - 110 -
TC = 25oC - 46.8 -
TC = 175oC - 445 -
V
ns
nC
©2010 Fairchild Semiconductor Corporation
FGH40N60SMD Rev. C3
3
www.fairchildsemi.com
Page 5
Typical Performance Characteristics
0 2 4 6
0
20
40
60
80
100
120
VGE = 8V
20V
TC = 25oC
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, VCE [V]
0 2 4 6
0
20
40
60
80
100
120
VGE = 8V
20V
TC = 175oC
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, VCE [V]
0 1 2 3 4
0
20
40
60
80
100
120
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
Collector Current, I
C
[A]
Collector-Emitter Voltage, VCE [V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
80A
40A
IC = 20A
Common Emitter
VGE = 15V
Collector-Emitter Voltage, V
CE
[V]
Case Temperature, TC [oC]
4 8 12 16 20
0
4
8
12
16
20
IC = 20A
40A
80A
Common Emitter
TC = -40oC
Collector-Emitter Voltage
,
V
CE
[V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 20
0
4
8
12
16
20
80A
IC = 20A
40A
Common Emitter
TC = 175oC
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, VGE [V]
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case
Characteristics Temperature at Variant Current Level
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
Figure 5. Saturation Voltage vs. V
©2010 Fairchild Semiconductor Corporation
FGH40N60SMD Rev. C3
Figure 6. Saturation Voltage vs. V
GE
4
GE
www.fairchildsemi.com
Page 6
Typical Performance Characteristics
0.1 1 10
0
1000
2000
3000
4000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
C
res
C
oes
C
ies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
30
0 40 80 120
0
3
6
9
12
15
400V
Common Emitter
TC = 25oC
300V
VCC = 200V
Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Qg [nC]
0 10 20 30 40 50
1
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
t
d(on)
t
r
Switching Time [ns]
Gate Resistance, RG [
ΩΩΩΩ
]
0 10 20 30 40 50
1
10
100
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
t
d(off)
t
f
Switching Time [ns]
Gate Resistance, RG [
ΩΩΩΩ
]
0 10 20 30 40 50
0.1
1
5
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
E
on
E
off
Switching Loss [mJ]
Gate Resistance, R
[
ΩΩΩΩ
]
20 30 40 50 60 70 80
1
10
100
1000
Common Emitter
VGE = 15V, RG = 6
ΩΩΩΩ
TC = 25oC
TC = 175oC
t
r
t
d(on)
Switching Time [ns]
Collector Current, IC [A]
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
©2010 Fairchild Semiconductor Corporation
FGH40N60SMD Rev. C3
5
www.fairchildsemi.com
Page 7
Typical Performance Characteristics
20 30 40 50 60 70 80
1
10
100
1000
Common Emitter
VGE = 15V, RG = 6
ΩΩΩΩ
TC = 25oC
TC = 175oC
t
d(off)
t
f
Switching Time [ns]
Collector Current, I
C
[A]
20 30 40 50 60 70 80
0.1
1
6
Common Emitter
VGE = 15V, RG = 6
ΩΩΩΩ
TC = 25oC
TC = 175oC
E
on
E
off
Switching Loss [mJ]
Collector Current, IC [A]
1 10 100 1000
0.01
0.1
1
10
100
300
1ms
10 ms
DC
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
10
µµµµ
s
100
µµµµ
s
Collector Current, I
c
[A]
Collector-Emitter Voltage, VCE [V]
1k 10k 100k 1M
0
50
100
150
200
250
TC = 75
o
C
TC = 100
o
C
Square Wave
TJ <= 175
o
C, D = 0.5,
VCE = 400V
VGE = 15/0V, RG = 6
ΩΩΩΩ
Collector Current, [A]
Switching Frequency, f[Hz]
0 0.5 1.0 1.5 2.0 2.5 3.0
1
10
100
TC = 25oC
TC = 175oC
Forward Voltage, VF [V]
Forward Current, I
F
[A]
TC = 25oC
TC = 175oC
0 10 20 30 40
0
2
4
6
8
10
12
TC = 25oC
TC = 175oC
diF/dt = 100A/
µµµµ
s
diF/dt = 200A/
µµµµ
s
diF/dt = 100A/
µµµµ
s
diF/dt = 200A/
µµµµ
s
Reverse Recovery Currnet, I
rr
[A]
Forward Current, IF [A]
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
©2010 Fairchild Semiconductor Corporation
FGH40N60SMD Rev. C3
6
www.fairchildsemi.com
Page 8
Typical Performance Characteristics
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
200
TC = 25oC
TC = 175oC
[ns]
rr
150
700
TC = 25oC
600
TC = 175oC
[nC]
rr
500
FGH40N60SMD — 600 V, 40 A Field Stop IGBT
100
400
diF/dt = 100A/
50
diF/dt = 200A/
µµµµ
s
Reverse Recovery Time, t
0
0 5 10 15 20 25 30 35 40 45
Forward Current, IF [A]
µµµµ
s
300
200
100
Stored Recovery Charge, Q
0
0 5 10 15 20 25 30 35 40 45
diF/dt = 200A/
Forwad Current, IF [A]
Figure 21. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.02
single pulse
0.01
0.01
Thermal Response [Zthjc]
0.001
10
-5
10
-4
10
-3
10
Rectangular Pulse Duration [sec]
P
DM
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
-2
10
t
1
t
2
-1
µµµµ
s
C
diF/dt = 100A/
0
10
µµµµ
s
Figure 22. Time Transient Thermal Impedance of Diode
3
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
single pulse
-5
10
10
-4
10
-3
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
P
DM
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
-2
10
t
10
1
t
2
C
-1
10
0
©2010 Fairchild Semiconductor Corporation
FGH40N60SMD Rev. C3
7
www.fairchildsemi.com
Page 9
4.82
15.87
E
A
5.20
4.96
15.37
5.58
5.34
4.13
3.53
E
20.82
20.32
E
4.58
E
B
E
3.65
E
3.51
0.254MB A
13.08 MIN
M
6.85
6.61
1.35
0.51
12.81
3.93
3.69
1 32
E
1.60
2.77
2.43
5.56
11.12
NOTES: UNLESS OTHERWISE SPECIFIED.
A. PACKAGE REFERENCE: JEDEC TO-247,
ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994
E
DOES NOT COMPLY JEDEC STANDARD VALUE
F. DRAWING FILENAME: MKT-TO247A03_REV04
1.87
(2X)
1.53
1.35
1.17
0.254MB A
16.25
15.75
3
E
0.71
0.51
2.66
M
2.29
1
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