Page 1
tm
FGH40N60SFD
600V, 40A Field Stop IGBT
FGH40N60SFD 600V, 40A Field Stop IGBT
July 2008
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
=2.3V @ IC = 40A
CE(sat)
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where
low conduction and switching losses are essential.
Applications
• Induction Heating, UPS, SMPS, PFC
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
P
D
Operating Junction Temperature -55 to +150
T
J
T
stg
T
L
Collector to Emitter Voltage 600 V
Gate to Emitter Voltage ± 20 V
Collector Current @ TC = 25oC80 A
Collector Current @ T
Pulsed Collector Current
Maximum Power Dissipation @ TC = 25oC290 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100oC40 A
C
@ T
= 25oC
C
= 100oC116 W
C
120 A
300
o
C
o
C
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.43
θJC
(Diode) Thermal Resistance, Junction to Case - 1.45
R
θJC
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGH40N60SFD Rev.C
Thermal Resistance, Junction to Ambient - 40
o
C/W
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
FGH40N60SFD 600V, 40A Field Stop IGBT
Max Qty
per Box
Device Marking Device Package
Packaging
Type Qty per Tube
FGH40N60SFD FGH40N60SFDTU TO-247 Tube 30ea -
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
∆BV
∆T
J
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V
Temperature Coefficient of Breakdown
CES
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 250µA
GE
CES
GES
-0.6-V/
, VGE = 0V - - 250 µA
, VCE = 0V - - ±400 nA
G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V
= 40A, VGE = 15V -2.32.9V
I
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance - 200 - pF
C
= 40A, VGE = 15V,
I
C
T
= 125oC
C
V
= 30V, VGE = 0V,
CE
f = 1MHz
-2.5- V
-2110- pF
Reverse Transfer Capacitance - 60 - pF
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 1.44 - mJ
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 1.62 - mJ
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time - 42 - ns
Turn-Off Delay Time - 115 - ns
Fall Time - 27 54 ns
Turn-On Switching Loss - 1.13 - mJ
= 400V, IC = 40A,
V
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 25oC
C
Turn-Off Switching Loss - 0.31 - mJ
Turn-On Delay Time
Rise Time - 43 - ns
Turn-Off Delay Time - 120 - ns
Fall Time - 30 - ns
Turn-On Switching Loss - 1.14 - mJ
= 400V, IC = 40A,
V
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 125oC
C
Turn-Off Switching Loss - 0.48 - mJ
Total Gate Charge
V
= 400V, IC = 40A,
Gate to Emitter Charge - 14 - nC
Gate to Collector Charge - 58 - nC
CE
V
= 15V
GE
-25-ns
-24-ns
- 120 - nC
FGH40N60SFD Rev. C
2 www.fairchildsemi.com
Page 3
FGH40N60SFD 600V, 40A Field Stop IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max Units
T
= 25oC - 1.95 2.6
V
FM
t
rr
Q
rr
Diode Forward Voltage IF = 20A
Diode Reverse Recovery Time
=20A, dIES/dt = 200A/µs
I
ES
Diode Reverse Recovery Charge
C
= 125oC - 1.85 -
T
C
T
= 25oC- 45 -
C
= 125oC - 140 -
T
C
T
= 25oC- 75 -
C
= 125oC - 375 -
T
C
nC
V
ns
FGH40N60SFD Rev.C
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics
FGH40N60SFD 600V, 40A Field Stop IGBT
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
120
TC = 25oC
100
[A]
C
80
60
40
Collector Current, I
20
0
0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V]
20V
120
15V
12V
10V
TC = 125oC
100
[A]
C
80
60
40
Collector Current, I
20V
15V
12V
10V
20
VGE = 8V
0
0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V]
VGE = 8V
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
80
Common Emitter
VGE = 15V
TC = 25oC
60
[A]
TC = 125oC
C
120
Common Emitter
VCE = 20V
TC = 25oC
[A]
TC = 125oC
C
80
40
40
20
Collector Current, I
0
01234
Collector-Emitter Voltage, VCE [V]
Collector Current, I
0
6 8 10 12 13
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
4.0
Common Emitter
VGE = 15V
[V]
3.5
CE
3.0
2.5
2.0
1.5
Collector-Emitter Voltage, V
1.0
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
80A
40A
IC = 20A
20
[V]
CE
16
12
Common Emitter
TC = -40oC
8
80A
4
Collector-Emitter Voltage, V
0
4 8 12 16 20
IC = 20A
Gate-Emitter V o ltage , VGE [V]
40A
GE
FGH40N60SFD Rev. C
4 www.fairchildsemi.com
Page 5
Typical Performance Characteristics
FGH40N60SFD 600V, 40A Field Stop IGBT
Figure 7. Saturation Voltage vs. V
20
[V]
CE
16
Common Emitter
TC = 25oC
12
Figure 8. Saturation Voltage vs. V
GE
20
16
[V]
CE
Common Emitter
TC = 125oC
12
GE
8
40A
80A
4
Collector-Emitter Voltage, V
0
4 8 12 16 20
IC = 20A
Gate-Emitter V o ltage , VGE [V]
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
5000
Common Emitter
VGE = 0V, f = 1MHz
4000
C
iss
TC = 25oC
3000
2000
C
oss
Capacitance [pF]
1000
C
rss
8
40A
80A
4
Collector-Emitter Voltage, V
0
4 8 12 16 20
IC = 20A
Gate-Emitter Voltage, VGE [V]
Vcc = 100V
200V
300V
15
Common Emitter
TC = 25oC
12
[V]
GE
9
6
3
Gate-Emitter Voltage, V
0
0.1 1 10
Collector-Emitter Voltage, VCE [V]
30
0
0 50 100 150
Gate Ch a r g e , Qg [nC]
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
400
100
[A]
c
10
1
Single Nonrepetitive
= 25oC
Pulse T
Collector Current, I
0.1
0.01
1 10 100 1000
C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, VCE [V]
10µs
100µs
1ms
10 ms
DC
200
100
t
r
Com mon Emitt e r
Switching Time [ns]
10
0 1020304050
t
d(on)
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
FGH40N60SFD Rev. C
5 www.fairchildsemi.com
Page 6
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
5500
Com mon Emitt e r
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
1000
TC = 125oC
100
Switching Time [ns]
t
d(off)
t
f
500
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
Switching Time [ns]
t
d(on)
t
r
FGH40N60SFD 600V, 40A Field Stop IGBT
10
0 1020304050
Gate Resistance, RG [Ω]
10
20 40 60 80
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance
Collector Current
500
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
t
d(off)
TC = 25oC
TC = 125oC
100
1
Switching Loss [mJ]
0.2
0.3
0 1020304050
Switching Time [ns]
10
20 40 60 80
t
f
Collector Current, IC [A]
Gate Resistance, RG [Ω]
E
on
E
off
Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching
SOA Characteristics
30
Common Emitter
VGE = 15V, RG = 10Ω
10
TC = 25oC
TC = 125oC
E
on
100
[A]
C
200
1
Switching Loss [mJ]
0.1
20 30 40 50 60 70 80
FGH40N60SFD Rev. C
Collector Cur ren t, IC [A]
E
off
10
Collector Current, I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Typical Reverse Current vs.
Reverse Voltage
80
[A]
F
TJ = 125oC
10
TJ = 25oC
TJ = 75oC
200
100
TJ = 125oC
10
[µA]
R
TJ = 75oC
1
FGH40N60SFD 600V, 40A Field Stop IGBT
1
Forward Current, I
0.2
01234
Forward Voltage, VF [V]
TC = 25oC
TC = 75oC
TC = 125oC
0.1
Reverse Current , I
0.01
50 200 400 600
TJ = 25oC
Reverse Voltage, VR [V]
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
100
[nC]
rr
80
200A/µs
60
di/dt = 100 A/µs
40
Stored Recovery Ch arge, Q
20
510203040
Forward Curre n t, IF [A]
60
[ns]
rr
50
di/dt = 100A/µs
200A/µs
40
Reverse Recovery Time, t
30
510203040
Forward Cu rrent, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
FGH40N60SFD Rev. C
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
single pulse
Thermal Response [Zthjc]
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
P
DM
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
7 www.fairchildsemi.com
t
1
t
2
C
Page 8
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
FGH40N60SFD 600V, 40A Field Stop IGBT
FGH40N60SFD Rev. C
Dimensions in Millimeters
8 www.fairchildsemi.com
Page 9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is
not intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
* EZSWITCH™ and FlashWriter
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
®
®
tm
®
®
®
®
*
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
tm
®
SM
PDP SPM™
Power-SPM™
PowerTrench
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Sup
SyncFET™
®
®
®
reMOS™
®
The
Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
tm
®
TinyWire™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I35
Loading...