Datasheet FDV302P Datasheet (Fairchild Semiconductor)

October 1997

FDV302P
Digital FET, P-Channel

General Description Features

This P-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one P-channel FET can
replace several digital transistors with different bias resistors
such as the DTCx and DCDx series.

SOT-23

Mark:302

SuperSOTTM-6

SuperSOTTM-8

-25 V, -0.12 A continuous, -0.5 A Peak.
R

= 13 Ω @ VGS= -2.7 V

DS(ON)

R

= 10 Ω @ V

DS(ON)

= -4.5 V.

GS

Very low level gate drive requirements allowing direct
operation in 3V circuits. V

GS(th)

< 1.5V.

Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model

Compact industry standard SOT-23 surface mount
package.

Replace many PNP digital transistors (DTCx and DCDx)
with one DMOS FET.

SO-8

SOT-223

SOIC-16

D

S

Absolute Maximum Ratings T

G

= 25oC unless otherwise noted

A

Symbol Parameter FDV302P Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -25 V
Gate-Source Voltage -8 V
Drain Current - Continuous -0.12 A

- Pulsed -0.5

P

D

TJ,T
ESD Electrostatic Discharge Rating MIL-STD-883D

Maximum Power Dissipation 0.35 W
Operating and Storage Temperature Range -55 to 150 °C

STG

6.0 kV

Human Body Model (100pf / 1500 Ohm)

THERMAL CHARACTERISTICS

R

JA

θ

Thermal Resistance, Junction-to-Ambient 357 °C/W

© 1997 Fairchild Semiconductor Corporation

FDV302P REV. F

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

I

GSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -25 V
Breakdown Voltage Temp. Coefficient

/∆T

J

Zero Gate Voltage Drain Current

ID = -250 µA, Referenced to 25 o C
VDS = -20 V, V

GS

= 0 V

-20

-1 µA

TJ = 55°C

Gate - Body Leakage Current VGS = -8 V, VDS= 0 V -100 nA

mV / oC

-10 µA

ON CHARACTERISTICS (Note)

∆V

V
R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage Temp. Coefficient

/∆T

J

Gate Threshold Voltage

ID = -250 µA, Referenced to 25 oC
VDS = VGS, ID = -250 µA

-0.65 -1 -1.5 V

Static Drain-Source On-Resistance VGS = -2.7 V, ID = -0.05 A 10.6 13

VGS = -4.5 V, ID = -0.2 A

1.9

7.9 10

mV / oC

TJ =125°C 12 18
I
g

D(ON)

FS

On-State Drain Current

VGS = -2.7 V, VDS = -5 V

Forward Transconductance VDS = -5 V, ID= -0.2 A 0.135 S

-0.05 A

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 7 pF

VDS = -10 V, VGS = 0 V,
f = 1.0 MHz

Reverse Transfer Capacitance 1.4 pF

11 pF

SWITCHING CHARACTERISTICS (Note)

t
t
t
t
Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDD = -6 V, ID = -0.2 A,
Turn - On Rise Time 8 16 ns

VGS = -4.5 V, R

GEN

= 50 Ω

5 12 ns

Turn - Off Delay Time 9 18 ns
Turn - Off Fall Time 5 10 ns
Total Gate Charge VDS = -5 V, ID = -0.2 A,
Gate-Source Charge 0.11 nC

VGS = -4.5 V

0.22 0.31 nC

Gate-Drain Charge 0.04 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Maximum Continuous Drain-Source Diode Forward Current -0.2 A
Drain-Source Diode Forward Voltage

VGS = 0 V, IS = -0.2 A

(Note)

-1 -1.5 V

Ω

FDV302P REV. F

Typical Electrical Characteristics

0.15

0.2

V = -5.0V

GS

-4.5

-4.0

-3.5

-3.0

-2.7

0.1

0.05

D

-I , DRAIN-SOURCE CURRENT (A)
0

0 1 2 3 4

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-2.5

Figure 1. On-Region Characteristics.

1.6

I = -0.05A

D

V = -2.7V

1.4

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

-2.0

2

V = -2.0 V

GS

1.5

-2.5

-2.7

-3.0

1

DS(ON)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5
0 0.05 0.1 0.15 0.2

-I , DRAIN CURRENT (A)

D

-4.0

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

25

I = -0.05A

T = 25°C

A

20

15

10

5

DS(ON)

R ,ON-RESISTANCE (OHM)

0

0 1 2 3 4 5 6 7 8

125 °C

-V ,GATE TO SOURCE VOLTAGE (V)

GS

D

-3.5

-4.5

Figure 3. On-Resistance Variation

with Temperature.

0.08

V = -5V

DS

0.06

0.04

0.02

D

-I , DRAIN CURRENT (A)

0

0.5 1 1.5 2 2.5 3

-V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

T = -55°C

A

25°C

125°C

Figure 4. On Resistance Variation with

Gate-To- Source Voltage.

0.5

V = 0V

GS

0.1

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001

0.2 0.4 0.6 0.8 1 1.2

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current and

T = 125°C

J

25°C

-55°C

Temperature.

FDV302P REV. F

Typical Electrical And Thermal Characteristics

8

I = -0.2A

D

6

4

2

GS

-V , GATE-SOURCE VOLTAGE (V)
0

0 0.1 0.2 0.3 0.4 0.5

Q , GATE CHARGE (nC)

V = -5V

DS

-10

-15

g

Figure 7. Gate Charge Characteristics.

1

0.5

0.2

RDS(ON) LIMIT

0.1

0.05

D

-I , DRAIN CURRENT (A)

0.02

0.01

V = -2.7V

GS

SINGLE PULSE

JA

R = 357 °C/W

θ

T = 25°C

A

1 2 5 10 15 20 30 40

- V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

100ms

1s

10s

1ms

25

15

C

C

iss

oss

10

5

3

CAPACITANCE (pF)

2

f = 1 MHz
V = 0 V

GS

1

0.1 0.3 1 2 5 10 15 25

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

rss

Figure 8. Capacitance Characteristics.

5

4

3

2

POWER (W)

1

0

0.001 0.01 0.1 1 10 100 300
SINGLE PULSE TIME (SEC)

SINGLE PULSE

JA

R =357° C/W

θ

T = 25°C

A

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power

Dissipation.

1

D = 0.5

0.5

0.2

0.2

0.1

0.1

0.05

0.05

0.02

0.02

0.01

0.01

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TRANSIENT THERMAL RESISTANCE

0.001

Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 300
t , TIME (sec)

1

R (t) = r(t) * R

JA

θ

R = 357 °C/W

JA

θ

P(pk)

t

1

t

T - T = P * R (t)

J

A

Duty Cycle, D = t /t

Figure 11. Transient Thermal Response Curve.

JA

θ

2

JA

θ

1 2

FDV302P REV. F