Datasheet FDN372S Datasheet (Fairchild)

September 2002

FDN372S

30V N-Channel PowerTrench



SyncFET™

FDN372S

General Description

The FDN372S is designed to replace a single MOSFET
and Schottky diode, used in synchronous DC-DC
power supplies, with a single integrated component.
This 30V MOSFET is designed to maximize power
conversion efficiency with low Rds(on) and low gate
charge. The FDN372S includes an integrated Schottky
diode using Fairchild Semiconductor’s monolithic
SyncFET process, making it ideal as the low side
switch in a synchronous converter.

Applications

• DC-DC Converter

• Motor Drives

D

Features

• 2.6 A, 30 V. R
R

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

= 40 mΩ @ VGS = 10 V

DS(ON)

= 50 mΩ @ VGS = 4.5 V

DS(ON)

D

S

± 16

0.46

S

V

W

°C

G

SuperSOT -3

TM

Absolute Maximum Ratings T

G

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous
– Pulsed 10
PD

TJ, T

STG

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range –55 to +150

(Note 1a)

2.6 A

(Note 1a)

0.5

(Note 1b)

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

75

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

372 FDN372S 7’’ 8mm 3000 units

2002 Fairchild Semiconductor Corporation

°C/W
°C/W

FDN372S Rev C(W)

FDN372S

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V

DSS

∆BV
∆T

I

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500

DSS

I

Gate–Body Leakage VGS = ±16 V, VDS = 0 V ±100 nA

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆TJ
R

DS(on)

I

D(on)

Breakdown Voltage Temperature

DSS
J

Coefficient

= 10 mA, Referenced to 25°C

I

D

24

mV/°C

µA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.4 3 V

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

= 10 mA, Referenced to 25°C

D

VGS = 10 V, ID = 2.6 A

= 4.5 V, ID = 2.3 A

V

GS

V

= 10V, ID = 2.6 A, TJ = 125°C

GS

–3.2

32

40

36

50

45

60

mV/°C

mΩ

On–State Drain Current VGS = 10 V, VDS = 5 V 10 A

gFS Forward Transconductance VDS = 10V, ID = 2.6 A 15 S

Dynamic Characteristics

C

Input Capacitance 630 pF

iss

C

Output Capacitance 115 pF

oss

C

Reverse Transfer Capacitance

rss

Rg Gate Resistance

Switching Characteristics

t

Turn–On Delay Time 7 14 ns

d(on)

(Note 2)

tr Turn–On Rise Time 5 10 ns
t

Turn–Off Delay Time 21 34 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 5.8 8.1 nC
Qgs Gate–Source Charge 1.3 1.9 nC
Qgd Gate–Drain Charge

= 15 V, V

V

DS

f = 1.0 MHz

V

= 15 mV f = 1.0 MHz

GS

= 15 V, ID = 1 A,

V

DD

= 10 V, R

V

GS

= 15 V, ID = 2.6 A,

V

DS

V

= 5 V

GS

= 0 V,

GS

= 6 Ω

GEN

45 pF

2.4

Ω

2.7 5.4 ns

1.2 1.7 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 0.7 A
VSD Drain–Source Diode Forward

VGS = 0 V, IS = 0.7 A

(Note 2)

440 700 mV

Voltage

trr
Qrr

Notes:

1. R

θJA

the drain pins. R

Diode Reverse Recovery Time
Diode Reverse Recovery Charge

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

a) 250°C/W when mounted on a

2

pad of 2 oz. copper.

0.02 in

θCA

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

I

= 2.6 A,

F

= 300 A/µs

d

iF/dt

is determined by the user's board design.

(Note 2)

b) 270°C/W when mounted on a

minimum pad.

10 ns
4 nC

FDN372S Rev C(W)

Typical Characteristics

FDN372S

25

VGS = 10V

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

01234

4.5V

3.5V

3.0V

2.5V

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

2.2

2

VGS = 2.5V

1.8

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0102030

3.5V

4.5V

I

, DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
ID = 2.6A

V

= 10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125

, JUNCTION TEMPERATURE (oC)

T

J

0.12

0.11

0.1

0.09

0.08

0.07

0.06

, ON-RESISTANCE (OHM)

0.05

DS(ON)

TA = 25oC

0.04

R

0.03

0.02
12345678910

TA = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

ID = 1.3A

5.0V
10V

Figure 3. On-Resistance Variation with

Temperature.

10

VDS = 10V

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

0.5 1.5 2.5 3.5 4.5

V

, GATE TO SOURC E VO LTAGE (V)

GS

TA = -55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

125oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1
TA = 125oC

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001

0.0 0.2 0.4 0.6

V

25oC

-55oC

BODY DIODE FOR WARD VOLTAGE (V)

SD,

with Source Current and Temperature.

FDN372S Rev C(W)

)

Typical Characteristics

FDN372S

5

ID = 2.6A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

V

0

01234567

Q

VDS = 10V

, GATE CHARGE (nC)

g

15V

20V

800

C

600

400

CAPACITANCE (pF)

200

0

iss

C

oss

C

rss

0 5 10 15 20

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

f = 1 MHz
V

= 0 V

GS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

100ms

10ms

1s

1

, DRAIN CURRENT (A)

0.1

D

I

0.01

0.1 1 10 100

DC

VGS = 10V
SINGLE PULSE
R

= 270oC/W

θJA

= 25oC

T

A

V

, DRAIN-SOURCE VOLTAGE (V)

DS

1ms

100µs

20

SINGLE PULSE
R

θ

JA

15

10

5

P(pk), PEAK TRANSIE NT P O WE R (W )

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

T

= 270°C/W

= 25°C

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

RESISTANCE

TRANSIENT THERMAL

r(t), NORMALIZED EFFECTIVE

0.001

0.01
SINGLE PULSE

R

(t) = r(t)* R

JA

θ

R

= 270oC/W

θJA

P(pk

t

1

- TA = P * R

T

J

Duty Cycle, D = t

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

t

2

JA

θ

(t)

JA

θ

/ t

1

2

FDN372S Rev C(W)

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I1