Datasheet FDMS86104 Datasheet (Fairchild)

G

S

S

S

D

D

D

D

5

6

7

8

3

2
1

4

Bottom

Power 56

Top

Pin 1

G

S

S

S

D

D

D

D

FDMS86104

N-Channel PowerTrench® MOSFET

100 V, 16 A, 24 mΩ

FDMS86104 N-Channel PowerTrench

July 2010

Features

 Max r
 Max r
 Advanced Package and Silicon combination for low r

and high efficiency

 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

= 24 mΩ at VGS = 10 V, ID = 7 A

DS(on)

= 39 mΩ at VGS = 6 V, ID = 5.5 A

DS(on)

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 16

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 96 mJ
Power Dissipation TC = 25 °C 73
Power Dissipation T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

DS(on)

= 25 °C unless otherwise noted

A

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

®

process thant has

Application

 DC-DC Conversion

= 25 °C 39

C

= 25 °C (Note 1a) 7

A

= 25 °C (Note 1a) 2.5

A

Thermal Characteristics

®

MOSFET

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.7
Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86104 FDMS86104 Power 56 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C

1

www.fairchildsemi.com

FDMS86104 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 66 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.94V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -10 mV/°C

D

V

= 10 V, ID = 7 A 20 24

GS

= 6 V, ID = 5.5 A 27 39

GS

= 10 V, ID = 7 A, TJ = 125 °C 33 40

V

GS

Forward Transconductance VDS = 10 V, ID = 7 A 18 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 178 237 pF
Reverse Transfer Capacitance 8 13 pF
Gate Resistance 0.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 3.5 10 ns
Turn-Off Delay Time 14.3 26 ns
Fall Time 3.2 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 5 V 6.7 9
Gate to Source Charge 3.2 nC
Gate to Drain “Miller” Charge 3 nC

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

= 50 V, ID = 7 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

V

DD

I

= 7 A

D

= 50 V,

694 923 pF

816ns

11.7 16 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, L = 3 mH, IAS = 8 A, VDD = 100 V, VGS = 10 V

©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 41 65 nC

V

GS

V

GS

= 7 A, di/dt = 100 A/μs

I

F

a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.

= 0 V, IS = 2 A (Note 2) 0.7 1.2
= 0 V, IS = 7 A (Note 2) 0.8 1.3

44 70 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

2

θCA

www.fairchildsemi.com

V

is determined by

012345

0

6

12

18

24

30

VGS = 6.5 V

VGS = 10 V

VGS = 4.5 V

VGS = 5 V

VGS = 8 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0 6 12 18 24 30

0

1

2

3

4

5

VGS = 4.5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 6.5 V

VGS = 8 V

VGS = 5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TE MPERATURE (

o

C)

45678910

0.00

0.05

0.10

0.15

0.20

TJ = 125 oC

ID = 7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

23456

0

6

12

18

24

30

TJ = 25 oC

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

FDMS86104 N-Channel PowerTrench

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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0 3 6 9 12 15

0

2

4

6

8

10

ID = 7 A

VDD = 50 V

V

DD

= 25 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 75 V

0.1 1 10 100

1

10

100

1000

2000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10 40

1

2

4

6

8

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

2

4

6

8

V

GS

= 6 V

R

θJA

= 50 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, Ambient TEMPERATURE (

o

C)

0.05 0.1 1 10 100 400

0.005

0.01

0.1

1

10

50

100 us

10 s

10 ms

DC

1 s

100 ms

1 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RA TED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

10-410-310-210-1110

100 1000

0.5

1

10

100

1000

4000

SINGLE PULSE
R

θJA

= 125

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

FDMS86104 N-Channel PowerTrench

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C

Figure 11.

Operating Area

Forward Bias Safe

Figure 10.

Max imum C o ntin u ous D r ain

Current vs Ambient Temperature

Fi gur e 12 . Singl e Pulse Maximum

Power Dissipation

4

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10

-4

10

-3

10

-2

10

-1

110

100 1000

0.0001

0.001

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

FDMS86104 N-Channel PowerTrench

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C

5

www.fairchildsemi.com

FDMS86104 N-Channel PowerTrench

Dimensional Outline and Pad Layout

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C

6

www.fairchildsemi.com

tm

®

tm

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fairchild
Semiconductor. The datasheet is for reference information only.

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Rev. I48