Datasheet FDN358P Datasheet (Fairchild Semiconductor)

March 1998

FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

SuperSOTTM-3

SuperSOTTM-6

SuperSOTTM-8

D

358

S

SuperSOT -3

TM

G

-1.5 A, -30 V, R R

= 0.125 Ω @ VGS = -10 V

DS(ON)

= 0.20 Ω @ VGS = - 4.5 V.

DS(ON)

High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability.

High density cell design for extremely low R

DS(ON)

.

Exceptional on-resistance and maximum DC current capability.

SO-8 SOT-223

D

G

SOIC-16

S

Absolute Maximum Ratings T

= 25oC unless other wise noted

A

Symbol Parameter FDN358P Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -30 V Gate-Source Voltage ±20 V Drain/Output Current - Continuous -1.5 A

- Pulsed -5

P

D

TJ,T

Maximum Power Dissipation (Note 1a) 0.5 W

(Note 1b)

Operating and Storage Temperature Range -55 to 150 °C

STG

0.46

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W

FDN358P Rev.D

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS

BV

∆BV

I

DSS

I

GSSF

I

GSSR

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V Breakdown Voltage Temp. Coefficient

/∆T

J

Zero Gate Voltage Drain Current

ID = -250 µA, Referenced to 25 oC VDS = -24 V, V

GS

= 0 V

-28

-1 µA

TJ = 55°C Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA Gate - Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

mV/ oC

-10 µA

-100 nA

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.5 -2 V Gate Threshold Voltage Temp. Coefficient

/∆T

J

Static Drain-Source On-Resistance

ID = -250 µA, Referenced to 25 oC VGS = -10 V, ID = -1.5 A

3

0.11 0.125

mV/ oC

TJ =125°C 0.15 0.21

0.175 0.2

7 S

I g

D(ON)

FS

VGS = -4.5 V, ID = -1.2 A On-State Drain Current VGS = -4.5 V, VDS = -5 V -5 A Forward Transconductance

VDS = -10 V, I

= -1.5 A

D

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -10 V, VGS = 0 V, Output Capacitance 150 pF

f = 1.0 MHz

270 pF

Reverse Transfer Capacitance 45 pF

SWITCHING CHARACTERISTICS (Note 2)

t t t t Q Q Q

D(on)

r

D(off)

f

Turn - On Delay Time Turn - On Rise Time 7 14 ns

VDD = -15 V, ID = -1 A,

VGS = -10 V, R

GEN

= 6 Ω

Turn - Off Delay Time 17 27 ns Turn - Off Fall Time 10 1.8 ns

g

gs

gd

Total Gate Charge Gate-Source Charge 1 nC Gate-Drain Charge 1.1 nC

VDS = -5 V, ID = -1.5 A,

VGS = -10 V

8 16 ns

6.5 9.1 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Note:

1. R

JA

θ

design while R Typical R

Maximum Continuous Drain-Source Diode Forward Current -0.42 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2) -0.74 -1.2 V

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

using the board layouts shown below on FR-4 PCB in a still air environment :

JA

θ

is guaranteed by

JC

θ

Ω

o

a. 250

C/W when mounted on a

0.02 in2 pad of 2oz Cu.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

o

b. 270

C/W when mounted on

2

a 0.001 in

pad of 2oz Cu.

FDN358P Rev.D

Typical Electrical Characteristics

10

V = -10V

GS

-6.0

8

6

4

2

D

-I , DRAIN-SOURCE CURRENT (A) 0

0 1 2 3 4 5

-5.0

-4.5

-4.0

-3.5

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-3.0

Figure 1. On-Region Characteristics.

1.6

I = -1.5A

D

V = -10V

GS

1.4

1.2

1

DS(ON)

0.8

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

DS(ON)

R , NORMALIZED

2.5

V = -4.0V

2

GS

-4.5

1.5

1

DRAIN-SOURCE ON-RESISTANCE

0 2 4 6 8 10

-5.0

-6.0

-I , DRAIN CURRENT (A)

D

-7.0

-8.0

Figure 2. On-Resistance Variation with

Drain Current and Gate

0.5

0.4

0.3

T = 125°C

0.2

0.1

DS(on)

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

-V , GATE TO SOURCE VOLTAGE (V)

GS

A

T = 25°C

A

-10

I = 0.75A

D

Figure 3. On-Resistance Variation

with Temperature.

10

V = -5V

DS

8

T = -55°C

A

25°C

125°C

6

4

D

-I , DRAIN CURRENT (A)

2

0

1 2 3 4 5 6

-V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

V = 0V

GS

1

0.1

T = 125°C

J

25°C

-55°C

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current and Temperature.

FDN358P Rev.D

Typical Electrical Characteristics

10

I = -1.5A

D

8

6

4

2

GS

-V , GATE-SOURCE VOLTAGE (V) 0

0 2 4 6 8

Q , GATE CHARGE (nC)

g

V = -5V

DS

-15V

Figure 7. Gate Charge Characteristics.

10

5

2

RDS(ON) LIMIT

1

0.5

0.1

D

0.05

-I , DRAIN CURRENT (A)

0.01

V = -10V

GS

SINGLE PULSE

R = 250°C/W

JA

θ

T = 25°C

A

0.1 0.2 0.5 1 2 5 10 30 50

- V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

10ms

100ms

1s

10s

-10V

1ms

700

400

C

200

100

CAPACITANCE (pF)

50

f = 1 MHz V = 0 V

GS

20

0.1 0.2 0.5 1 2 5 10 30

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

iss

oss

rss

Figure 8. Capacitance Characteristics.

50

40

30

20

POWER (W)

10

0

0.0001 0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC)

SINGLE PULSE

JA

R =250° C/W

θ

T = 25°C

A

Figure 9. Maximum Safe Operating Area.

1

D = 0.5

0.5

0.2

0.1

0.05

0.02

0.01

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

0.1

0.05

0.02

0.01 Single Pulse

Figure 11. Transient Thermal Response Curve.

t , TIME (sec)

1

Figure 10. Single Pulse Maximum Power

Dissipation.

R (t) = r(t) * R

JA

θ

R = 250 °C/W

JA

θ

P(pk)

t

1

t

T - T = P * R (t)

J

A

Duty Cycle, D = t /t

JA

θ

2

JA

θ

1 2

FDN358P Rev.D