Datasheet FDMS8884 Datasheet (Mosfet)

FDMC8884

Bottom

D

D

D

D

S

S

S

G

Top

Pin 1

MLP 3.3x3.3

G

S

S

S

D
D

D

D

5
6

7

8

3

2

1

4

N-Channel Power Trench® MOSFET

30 V, 15 A, 19 mΩ

Features

 Max r
 Max r
 High performance technology for extremely low r
 Termination is Lead-free and RoHS Compliant

= 19 mΩ at VGS = 10 V, ID = 9.0 A

DS(on)

= 30 mΩ at VGS = 4.5 V, ID = 7.2 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power
been especially tailored to minimize the on-state resistance.
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.

Application

 High side in DC - DC Buck Converters
 Notebook battery power management
 Load switch in Notebook

FDMC8884 N-Channel Power Trench

October 2010

Trench® process that has

This

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8884 FDMC8884 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDMC8884 Rev.E2

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 15

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40
Single Pulse Avalanche Energy (Note 3) 24 mJ
Power Dissipation TC = 25 °C 18
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 6.6
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C 24

C

= 25 °C (Note 1a) 9.0

A

= 25 °C (Note 1a) 2.3

A

1

A

W

°C/W

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FDMC8884 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 22 mV/°C

I

D

V

= 24 V, V

DS

= 0 V 1

GS

= 125 °C 250

T

J

= 0 V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.4 1.9 2.5 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5 V, ID = 9.0 A 24 S

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 9.0 A 16 19

GS

= 4.5 V, ID = 7.2 A 22 30

GS

= 10 V, ID = 9.0 A, TJ = 125 °C 22 30

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 110 150 pF
Reverse Transfer Capacitance 76 115 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

513 685 pF

Gate Resistance 1.4 2.1 Ω

mΩV

μA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 2 10 ns
Turn-Off Delay Time 15 27 ns

= 15 V, ID = 9.0 A,

V

DD

V

= 10 V, R

GS

GEN

Fall Time 2 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V

= 0 V to 4.5 V 5.0 7.0 nC

GS

Total Gate Charge 1.8 nC
Gate to Drain “Miller” Charge 2.2 nC

Drain-Source Diode Characteristics

V

= 0 V, IS = 9.0 A (Note 2) 0.86 1.2

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1. 5 in . bo ard of FR -4 ma teri al. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 3 10 nC

a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper

GS

= 0 V, IS = 1.6 A (Note 2) 0.76 1.2

V

GS

IF = 9.0 A, di/dt = 100 A/μs

= 6 Ω

V

DD

I

= 9.0 A

D

6 12 ns

10 14 nC

= 15 V

13 18 ns

is guaranteed by design while R

θJC

b.125 °C/W when mounted on
a minimum pad of 2 oz copper

is determined by

θCA

V

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4 A .

©2010 Fairchild Semiconductor Corporation
FDMC8884 Rev.E2

2

www.fairchildsemi.com

FDMC8884 N-Channel Power Trench

0123

0

10

20

30

40

VGS = 6 V

VGS = 3.5 V

VGS = 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4 V

VGS = 3 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

GS

= 6 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 9.0 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

10

20

30

40

50

60

70

80

TJ = 125 oC

ID = 9.0 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE ( V )

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

12345

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.00.20.40.60.81.01.21.4

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor ma liz ed O n- Res istan ce

vs Drain Current and Gate Voltage

®

MOSFET

Figur e 3 . Norm al ized O n- Resis ta nce

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDMC8884 Rev.E2

Figure 5. Transfer Characteristics

Figure 4.

On-Resistan ce vs Gate to

Source Voltage

Figure 6.

Source to Dra in Diode

Forward Voltage vs Source Current

3

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FDMC8884 N-Channel Power Trench

036912

0

2

4

6

8

10

ID = 9.0 A

VDD = 20 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 15V

0.1 1 10

100

1000

50

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

30

0.01 0.1 1 10

1

10

20

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

10

20

30

V

GS

= 4.5 V

Limited by Package

R

θJC

= 6.6 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100

0.01

0.1

1

10

100

10 s

1 s

DC

100 ms

10 ms

1 ms

100 us

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

C

= 25

o

C

10-410-310-210

-1

110

100 1000

1

10

100

1000

SINGLE PULSE
R

θJA

= 125

o

C/W

T

A

= 25

o

C

0.5

VGS = 10V

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Cap aci tan ce v s Dr ain

to Source Voltage

®

MOSFET

Figure 9.

Unc lamp ed I ndu c tiv e

Switching Capability

©2010 Fairchild Semiconductor Corporation
FDMC8884 Rev.E2

Figure 11.

Forward Bias Safe

Operating Area

Figure 10.

Maximum Contin uo us Drain

Current vs Ca se Tem perat ure

Figure 12.

Si ngle Pul se Maximu m

Power Dissipation

4

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FDMC8884 N-Channel Power Trench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

SINGLE PULSE
R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

= 25 °C unless otherwise noted

J

Figure 13. Transient Thermal Response Curve

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDMC8884 Rev.E2

5

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Dimensional Outline and Pad Layout

FDMC8884 N-Channel Power Trench

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDMC8884 Rev.E2

6

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tm

®

tm

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®

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®

®

SM

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Power-SPM™
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Saving our world, 1mW/W/kW at a time™
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™

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FDMC8884 N-Channel Power Trench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2010 Fairchild Semiconductor Corporation

Datasheet contains the design specificatio ns for product development. Sp ecifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fai r child
Semiconductor. The datashe et is for reference information only.

7

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Rev. I48

FDMC8884 Rev.E2