Datasheet FDMS86500DC Datasheet (Fairchild)

FDMS86500DC

Bottom

Top

Pin 1

S

G

S

S

D

D

D

D

Power 56

S

Pin 1

D

D

D

D

S

S

S

G

N-Channel Dual CoolTM Power Trench® MOSFET

60 V, 60 A, 2.3 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package
 Max r
 Max r
 High performance technology for extremely low r

 100% UIL Tested
 RoHS Compliant

= 2.3 mΩ at VGS = 10 V, ID = 29 A

DS(on)

= 3.3 mΩ at VGS = 8 V, ID = 24 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.

Applications

 Synchronous Rectifier for DC/DC Converters
 Telecom Secondary Side Rectification
 High End Server/Workstation Vcore Low Side

December 2011

®

process.

TM

package

DS(on)

FDMS86500DC N-Channel Dual Cool

TM

Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C

Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 60

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 317 mJ
Power Dissipation TC = 25 °C 125
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Top Source) 2.8
Thermal Resistance, Junction to Case (Bottom Drain) 1.0
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11

86500 FDMS86500DC Dual Cool

= 25 °C unless otherwise noted

A

= 25 °C 177

C

= 25 °C (Note 1a) 29

A

= 25 °C (Note 1a) 3.2

A

TM

Power 56 13’’ 12 mm 3000 units

1

A

W

°C/W

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FDMS86500DC N-Channel Dual Cool

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 60 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 48 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25°C 30 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.5 3.7 4.5 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -12 mV/°C

D

V

= 10 V, ID = 29 A 1.9 2.3

GS

= 8 V, ID = 24 A 2.4 3.3

GS

= 10 V, ID = 29 A, TJ = 125 °C 3.0 3.7

V

GS

Forward Transconductance VDS = 10 V, ID = 29 A 98 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 1605 2680 pF
Reverse Transfer Capacitance 48 95 pF

= 30 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 1.0 Ω

5775 7680 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 25 40 ns
Turn-Off Delay Time 34 54 ns

= 30 V , ID = 29 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω
Fall Time 8.2 17 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 31 nC

= 0 V to 8 V 62 87 nC

GS

V

DD

I

= 29 A

D

= 30 V

Gate to Drain “Miller” Charge 15 nC

35 56 ns

76 107 nC

mΩV

TM

Power Trench

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 46 74 nC

V

= 0 V, IS = 2.7 A (Note 2) 0.71 1.2

GS

= 0 V, IS = 29 A (Note 2) 0.79 1.3

V

GS

= 29 A, di/dt = 100 A/μs

I

F

2

59 95 ns

V

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Thermal Characteristics

FDMS86500DC N-Channel Dual Cool

R

θJC

R

θJC

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

R

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 2.8
Thermal Resistance, Junction to Case (Bottom Drain) 1.0
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1c) 27
Thermal Resistance, Junction to Ambient (Note 1d) 34
Thermal Resistance, Junction to Ambient (Note 1e) 16
Thermal Resistance, Junction to Ambient (Note 1f) 19
Thermal Resistance, Junction to Ambient (Note 1g) 26
Thermal Resistance, Junction to Ambient (Note 1h) 61
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on
a minimum pad of 2 oz copper

is determined

θCA

°C/W

TM

Power Trench

®

MOSFET

SF

DF

DS

G

SS

SF

DS

DF

G

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sin k , 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminu m He at Si nk, mi n imu m pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 46 A, VDD = 54 V, VGS = 10 V.

2

pad of 2 oz copper

SS

©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C

3

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FDMS86500DC N-Channel Dual Cool

012345

0

50

100

150

200

VGS = 6.5 V

VGS = 10 V

VGS = 7 V

VGS = 8 V

VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

VDS, DRA IN T O SOURCE VOLTAGE (V)

0 50 100 150 200

0

1

2

3

4

5

VGS = 8 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 6 V

VGS = 6.5 V

VGS = 7 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID = 29 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TE MPERATURE (

o

C)

5678910

0

2

4

6

8

10

TJ = 125 oC

ID = 29 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

2345678

0

50

100

150

200

TJ = 25 oC

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norm a l i z e d O n -Resistan c e

vs Drain Current and Gate Voltage

TM

Power Trench

®

MOSFET

Fig u r e 3. Nor m a lized O n - Resi s t ance

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

4

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FDMS86500DC N-Channel Dual Cool

0 20406080

0

2

4

6

8

10

ID = 29 A

VDD = 20 V

V

DD

= 30 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 40 V

0.1 1 10 60

10

100

1000

10000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10 100 500

1

10

100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

30

60

90

120

150

180

Limited by Package

V

GS

= 8 V

R

θJC

= 1.0 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100 400

0.01

0.1

1

10

100

300

10 s

10 ms

DC

1 s

100 ms

1 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 81

o

C/W

T

A

= 25

o

C

10-310

-2

10

-1

110

100 1000

1

10

100

1000

2000

SINGLE PULSE
R

θJA

= 81

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

TM

Power Trench

®

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C

Figure 11.

Operating Area

Forward Bias Safe

Figure 10.

Ma x imum C onti nuous Drai n

Current vs Case Temperature

5

Fi gure 12. S ingle Pul se M aximu m

Power Dissipation

www.fairchildsemi.com

FDMS86500DC N-Channel Dual Cool

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 81 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

TM

Power Trench

®

MOSFET

©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C

6

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Dimensional Outline and Pad Layout

FDMS86500DC N-Channel Dual Cool

TM

Power Trench

®

MOSFET

©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C

7

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®

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As used here in:

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

8

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Rev. I60