Datasheet FDMS7600AS Datasheet (Fairchild)

FDMS7600AS

Dual N-Channel PowerTrench® MOSFET

N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ

Features

Q1: N-Channel

 Max r  Max r

Q2: N-Channel

 Max r  Max r

 RoHS Compliant

= 7.5 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 12 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 2.8 mΩ at VGS = 10 V, ID = 20 A

DS(on)

= 3.3 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

General Description

This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications

 Computing

FDMS7600AS Dual N-Channel PowerTrench

December 2009

 Communications  General Purpose Point of Load  Notebook V

S2

S1/D2

D1

Top

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

TJ, T

STG

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 3) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 30 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40 60 Power Dissipation for Single Operation TA = 25 °C 2.2 T Operating and Storage Junction Temperature Range -55 to +150 °C

Power 56

= 25 °C unless otherwise noted

A

G1

Bottom

S2

G2

CORE

S2

S2 S2 G2

= 25 °C 50 120

C

= 25 °C 12

A

= 25 °C 1.0

A

Q 2

5 6 7 8

1a

1a 1c

Q 1

1b

22

1b

2.5

1d

1.0

Thermal Characteristics

R

θJA θJA

R

θJC

Thermal Resistance, Junction to Ambient 57 Thermal Resistance, Junction to Ambient 125 Thermal Resistance, Junction to Case 3.5 2

1a

1c

50

120

1b

1d

Package Marking and Ordering Information

®

MOSFET

D1

4

D1

3

D1

2

G1

1

A

W

°C/WR

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7600AS FDMS7600AS Power 56 13 ” 12 mm 3000 units

1

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FDMS7600AS Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V

Gate to Source Leakage Current VGS = 20 V, VDS= 0 V

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

ID = 250 µA, VGS = 0 V ID = 1 mA, VGS = 0 V

ID = 250 µA, referenced to 25 °C ID = 1 mA, referenced to 25 °C

= 0 V

GS

VGS = VDS, ID = 250 µA VGS = VDS, ID = 1 mA

ID = 250 µA, referenced to 25 °C ID = 1 mA, referenced to 25 °C

VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V , ID = 12 A , TJ = 125 °C

VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 18 A VGS = 10 V , ID = 20 A , TJ = 125 °C

VDS = 5 V, ID = 12 A VDS = 5 V, ID = 20 A

Q1Q230

30

Q1 Q2

Q1Q21

Q1 Q2

Q1

Q2

Q1 Q2

1

15 18

1.8

1.5

6.0

8.5

8.3

2.2

2.6

2.6 63

190

V

mV/°C

1

500µAµA 100

100nAnA

3 3

-6

-5

mV/°C

7.5 12 12

2.8

3.3

3.8

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

g

Q

gs

Q

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q2: V

= 15 V, VGS = 0 V, f = 1 MHZ

DS

Q1: VDD = 15 V, ID = 12 A, VGS = 10 V, R

GEN

= 6 Ω

Q2: VDD = 15 V, ID = 20 A, VGS = 10 V, R

= 0 V to 10 V

GS

GEN

= 6 Ω

Q1 VDD = 15 V,

= 0 V to 4.5 V

GS

ID = 12 A

Q2 VDD = 15 V, ID = 20 A

Q1 Q2

1315

1750

5265

7005

445

2150

600

2860

45

20070300

0.9

0.3

8.61818

2.5

7.61016 20

45

2.3

5.21010 20

8128113

9.33713

4.3 13

2.2

9.6

32

32 72

52

pF

Ω

ns

nC

2

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FDMS7600AS Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

V

= 0 V, IS = 12 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1: R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad o n a 1. 5 x 1.5 in. board of FR-4 material. R

θJA

by the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

a. 57 °C/W when mounted on

2

a 1 in

pad of 2 oz copper

c. 125 °C/W when mounted on a minimum pad of 2 oz copper

GS

V

= 0 V, IS = 20 A (Note 2)Q1Q2

GS

Q1 I

= 12 A, di/dt = 100 A/µs

F

Q2 I

= 20 A, di/dt = 300 A/µs

F

Q1 Q2

is guaranteed by design while R

θJC

b. 50 °C/W when mounted on a 1 in

d. 120 °C/W when mounted on a minimum pad of 2 oz copper

2

pad of 2 oz copper

0.7 274743

108018

128

1.2

75

is determined

θCA

V

ns

nC

®

MOSFET

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

3

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FDMS7600AS Dual N-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

40

30

20

10

, DRAIN CURRENT (A)

D

I

0

VGS = 3.5 V

0.0 0.5 1.0 1.5 2.0

Figure 1.

1.6

ID = 12 A V

= 10 V

GS

1.4

1.2

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.8

-75 -50 -25 0 25 50 75 100 125 150

T

Fi g u r e 3. No r m alized O n Resist a n ce

vs Junction Temperature

VGS = 10 V

V

= 6

V

GS

VGS = 4.5 V

VGS = 4 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

, JUNCTION TEMPERATURE (

J

o

C)

= 25 °C unless otherwise noted

J

4

3

VGS = 3.5 V

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0

0 10203040

I

,

D

Norm a l i z e d O n - R e sistance

vs Drain Current and Gate Voltage

40

)

Ω

m

(

30

20

DRAIN TO

,

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

Figure 4.

TJ = 125 oC

TJ = 25 oC

V

,

GATE TO SOURCE VOLTAGE (V)

GS

On-Res istance vs Gate to

Source Voltage

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 4 V

VGS = 6 V

DRAIN CURRENT (A)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 12 A

V

GS

= 4.5 V

V

= 10 V

GS

®

MOSFET

40

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

30

V

= 5 V

DS

20

10

, DRAIN CURRENT (A)

D

I

0

1.5 2.0 2.5 3.0 3.5 4.0

TJ = 150 oC

TJ = 25 oC

VGS, GATE TO SOURCE V OLTAGE (V)

Figure 5. Transfer Characteristics

40

V

= 0 V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

TJ = -55 oC

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

4

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FDMS7600AS Dual N-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

10

ID = 12 A

8

V

= 10 V

DD

6

4

V

DD

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0 5 10 15 20

Figure 7.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

60

V

= 10 V

GS

40

V

= 4.5 V

GS

20

Limited by Package

DRAIN CURRENT (A)

,

D

I

0

25 50 75 100 125 150

T

,

CASE TEMPERATURE

C

= 20 V

VDD = 15 V

R

= 3.5 oC/W

θ

JC

o

(

C

)

= 25 °C unless otherwise noted

J

2000 1000

100

CAPACITANCE (pF)

f = 1 MHz

= 0 V

V

GS

10

0.1 1 10 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Capa c i t a nce v s D r ain

to Source Voltage

100

10

1

THIS AR EA IS

LIMITED BY r

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

T

D

J

I

R

θ

T

A

0.01

0.01 0.1 1 10 100

DS(on

= MAX RATED

= 125 oC/W

JA

= 25 oC

VDS, DRAIN to SOURCE VOLTAGE (V)

C

iss

C

oss

C

rss

®

MOSFET

100us

1 ms

10 ms

)

100 ms

1s

10s

DC

200

Figure 9.

Maximum Continuous Drain Current vs

Case Temperature

1000

100

10

, PEAK TRANSIENT POWER (W)

1

(PK)

P

0.5

-4

10

-3

10

Figure 10. Forward Bias Safe Operating Area

SINGLE PULSE R

= 125 oC/W

θJA

= 25 oC

T

A

-2

10

-1

10

t, PULSE WIDTH (s)

110

100 1000

Figure 11. Single Pulse Maximum Power Dissipation

5

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FDMS7600AS Dual N-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

JA

θ

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

0.1

0.05

0.02

0.01

SINGLE PULSE R

= 125 oC/W

θ

JA

(

Note 1c

)

-4

10

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (sec)

Figure 12. Junction-to-Ambient Transient Thermal Response Cu rve

= 25 °C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

110

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

A

100 1000

®

MOSFET

6

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FDMS7600AS Dual N-Channel PowerTrench

Typical Characteristics (Q2 N-Channel) T

60

VGS = 10 V

VGS = 6

V

40

20

, DRAIN CURRENT (A)

D

I

0

0.0 0.1 0.2 0.3 0.4

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 13. On-Region Characteristics

1.6

ID = 20 A

= 10 V

1.4

V

GS

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

,

JUNCTION TEMPERATURE

J

Figure 15. Normalized On-Resistance

vs Junction Temperature

VGS = 4.5 V

VGS = 3.5 V

VGS = 3 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

o

(

C

)

= 25 oC unlenss otherwise noted

J

3

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 3 V

2

1

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

0

0204060

I

,

DRAIN CURRENT (A)

D

Figure 14. Normalized on-Resistance vs Drain

Current and Gate Voltage

10

)

Ω

m

8

(

6

DRAIN TO

,

4

DS(on)

r

2

SOURCE ON-RESISTANCE

0

246810

TJ = 25 oC

V

,

GATE TO SOURCE VOLTAGE (V)

GS

Figure 16. On-Resistance vs Gate to

Source Voltage

VGS = 3.5 V

V

= 6 V

GS

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 20 A

TJ = 125 oC

VGS = 4.5 V

V

= 10 V

GS

®

MOSFET

60

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

V

= 5 V

DS

40

TJ = 125 oC

20

, DRAIN CURRENT (A)

D

I

0

1.0 1.5 2.0 2.5 3.0

TJ = 25 oC

VGS, GATE TO SOURCE V OLTAGE (V)

Figure 17. Transfer Characteristics

60

V

= 0 V

GS

10

TJ = 125 oC

1

0.1

, REVERSE DRAIN CURRENT (A)

S

TJ = -55 oC

I

0.01

0.00.20.40.60.81.01.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 25 oC

TJ = -55 oC

Figure 18. Source to Drain Diode

Forward Voltage vs Source Current

7

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FDMS7600AS Dual N-Channel PowerTrench

Typical Characteristics (Q2 N-Channel) T

10

ID = 20A

8

V

= 10 V

DD

6

4

V

= 20 V

DD

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0306090

Qg, GATE CHARGE (nC)

Figure 19. Gate Charge Charac ter is tics

150

V

= 10 V

120

90

V

GS

60

DRAIN CURRENT (A)

,

D

I

30

Limited by Package

0

25 50 75 100 125 150

GS

= 4.5 V

T

,

CASE TEMPERATURE

C

VDD = 15 V

R

= 2 oC/W

θ

JC

o

(

C

)

o

= 25

C unless otherwise noted

J

10000

1000

CAPACITANCE (pF)

f = 1 MHz V

GS

100

0.1 1 10 30

Figure 20. Capacitance vs Drain

100

10

THIS AREA IS

1

LIMITED BY r

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

T

D

I

R T

0.01

0.01 0.1 1 10 100

= 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

to Source Voltage

DS(on

)

= MAX RATED

J

= 120 oC/W

θ

JA

= 25 oC

A

VDS, DRAIN to SOURCE VOLTAGE (V)

C

iss

C

oss

C

rss

1 ms

10 ms 100 ms

1s

10s

DC

®

MOSFET

200

Figure 21. Maximun Continuous Drain

Current vs Case Temperature

1000

100

10

, PEAK TRANSIENT POWER (W)

1

(PK)

P

0.5

-3

10

Figure 22. Forward Bias Safe Operating Area

-2

-1

10

t, PULSE WIDTH (s)

110

Figure 23. Single Pulse Maximum Power Dissipation

8

SINGLE PULSE

= 120 oC/W

R

θ

JA

T

= 25 oC

A

100 1000

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FDMS7600AS Dual N-Channel PowerTrench

Typical Characteristics (Q2 N_Channel) T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

JA

θ

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

0.1

0.05

0.02

0.01

SINGLE PULSE R

= 120 oC/W

θ

JA

(Note 1d)

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (sec)

Figure24. Junction-to-Ambient Transient Thermal Response Curve

= 25 oC unless otherwise noted

J

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

110

P

DM

t

1

t

2

x R

+ T

θJA

A

100 1000

®

MOSFET

9

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Typical Characteristics (continued)

SyncFET Schottky body diode Characteristics

FDMS7600AS Dual N-Channel PowerTrench

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 25 shows the reverse recovery characteristic of the FDMS7600AS.

15

10

didt = 300 A/µ s

5

CURRENT (A)

0

-5 150 200 250 300

TIME (ns)

Figure 25. FDMS7600AS SyncFET body

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

-1

10

-2

10

-3

10

-4

10

-5

10

, REVERSE LEAKAGE CURRENT (A)

-6

10

DSS

I

0 5 10 15 20 25 30

VDS, REVERSE VOLTAGE (V)

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

Figure 26. SyncFET body diode reverse leakage versus drain-source voltage

®

MOSFET

10

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Dimensional Outline and Pad Layout

FDMS7600AS Dual N-Channel PowerTrench

®

MOSFET

11

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TRADEMARKS

tm

®

tm

The following includes registered and unregistered trademarks and service marks, owned b y Fairchild Semiconductor and /or its globa l subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter

®

*

®

FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

PDP SPM™ Power-SPM™

PowerTrench

®

SM

®

PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®

™

®

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™*

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

®

*Trademarks of System General Corporation, used under license by Fairchild Semiconducto r.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS7600AS Dual N-Channel PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semico nductor products are experienci ng counterfeiting of their

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.

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buyin g direct or from aut horized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I41

Datasheet FDMS7600AS Datasheet (Fairchild)

Specifications and Main Features

Frequently Asked Questions

User Manual