Datasheet FDMS7572S Datasheet (Fairchild)

FDMS7572S

DS(on)

TM

General Description

The FDMS7572S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r

while maintaining excellent switching performance. This

DS(on)

device has the added benefit of an efficient monolithic Schottky
body diode.

Applications

 Synchronous Rectifier for Synchronous Buck Converters
 Notebook
 Server
 Telecom

 High Efficiency DC-DC Switch Mode Power Supplies

N-Channel PowerTrench® SyncFET

25 V, 49 A, 2.9 mΩ

Features

 Max r
 Max r
 Advanced Package and Silicon combination for low r

and high efficiency

 SyncFET Schottky Body Diode
 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

= 2.9 mΩ at VGS = 10 V, ID = 23 A

DS(on)

= 4.2 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

FDMS7572S N-Channel PowerTrench

January 2010

®

SyncFET

Top

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 25 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 84 mJ
Power Dissipation TC = 25 °C 46
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

D

C

Bottom

D

D

D

= 25 °C unless otherwise noted

Pin 1

S

S

S

G

= 25 °C 105

C

= 25 °C (Note 1a) 23

A

= 25 °C (Note 1a) 2.5

A

D

5

D

6

D

7

D

8

4
3
2
1

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 2.3
Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

G

S
S
S

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7572S FDMS7572S Power 56 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDMS7572S Rev.C

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FDMS7572S N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V

(Note 2)

I

= 10 mA, referenced to 25 °C 19 mV/°C

D

= 0 V 500 µA

GS

= 0 V 100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 10 mA, referenced to 25 °C -5 mV/°C

D

V

= 10 V, ID = 23 A 2.4 2.9

GS

= 4.5 V, ID = 18 A 3.4 4.2

GS

= 10 V, ID = 23 A, TJ = 125 °C 3.5 4.3

V

GS

Forward Transconductance VDS = 5 V, ID = 23 A 159 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 577 770 pF
Reverse Transfer Capacitance 128 195 pF
Gate Resistance 1.1 2.4 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 410ns
Turn-Off Delay Time 27 43 ns
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 15 21 nC
Gate to Source Gate Charge 6.3 nC
Gate to Drain “Miller” Charge 4.0 nC

= 13 V, VGS = 0 V,

V

DS

f = 1 MHz

= 13 V, ID = 23 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

V

DD

I

= 23 A

D

= 13 V,

2090 2780 pF

10 20 ns

32 45 nC

mΩV

®

SyncFET

Drain-Source Diode Characteristics

V

= 0 V, IS = 2 A (Note 2) 0.48 0.8

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 materi al. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 17 31 nC

a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. EAS of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

FDMS7572S Rev.C

GS

= 0 V, IS = 23 A (Note 2) 0.79 1.2

V

GS

= 23 A, di/dt = 300 A/ µs

I

F

2

23 36 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

V

is determined by

θCA

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FDMS7572S N-Channel PowerTrench

Typical Characteristics T

150

120

90

60

DRAIN CURRENT (A)

,

30

D

I

0

012345

Figure 1.

VGS = 3.5 V

VGS = 4.5 V

VGS = 10 V

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

1.5

ID = 23 A

1.4

= 10 V

V

GS

1.3

1.2

1.1

NORMALIZED

1.0

0.9

DRAIN TO SOURCE ON-RESISTANCE

0.8

-75 -50 -25 0 25 50 75 100 125 150

T

,

JUNCTION TEMPERATURE

J

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

= 25 °C unless otherwise noted

J

VGS = 3 V

VGS = 2.5 V

o

(

C

)

10

VGS = 2.5 V

8

6

4

NORMALIZED

2

DRAIN TO SOURCE ON-RESISTANCE

0

0 30 60 90 120 150

I

D

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

VGS = 3 V

VGS = 3.5 V

VGS = 4.5 V

VGS = 10 V

, DRAIN CURRENT (A)

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

10

)

Ω

m

8

(

ID = 23 A

6

DRAIN TO

,

4

DS(on)

r

2

SOURCE ON-RESISTANCE

0

246810

V

,

GATE TO SOURCE VOLTAGE (V)

GS

Figure 4.

On-Re sistance v s Gate to

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% M AX

TJ = 125 oC

TJ = 25 oC

Source Voltage

®

SyncFET

150

120

90

60

, DRAIN CURRENT (A)

30

D

I

0

FDMS7572S Rev.C

PULSE DURA TION = 80 µs
DUTY CYCLE = 0.5% MAX

V

= 5 V

DS

TJ = 125 oC

TJ = 25 oC

TJ = -55 oC

1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

200
100

V

= 0 V

GS

10

TJ = 125 oC

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

TJ = 25 oC

TJ = -55 oC

Sou rce to Drain Diode

Forward Voltage vs Source Current

3

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FDMS7572S N-Channel PowerTrench

Typical Characteristics T

10

ID = 23A

8

VDD = 13 V

6

V

= 10 V

DD

4

2

, GATE TO SOURCE VOLTAGE ( V)

GS

V

0

0 5 10 15 20 25 30 35

Figure 7.

50

10

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

TJ = 25 oC

= 25 °C unless otherwise noted

J

V

=

16 V

DD

TJ = 100 oC

5000

1000

CAPACITANCE (pF)

f = 1 MHz

100

= 0 V

V

GS

50

0.1 1 10 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Capacitance vs Drain

to Source Voltage

120

V

= 10 V

= 4.5 V

GS

90

V

GS

60

C

iss

C

oss

C

rss

®

SyncFET

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 1000

Figure 9.

200
100

10

1

, DRAIN CURRENT (A)

D

0.1

I

0.01

0.01 0.1 1 10 100

DRAIN CURRENT (A)

,

30

TJ = 125 oC

tAV, TIME IN AVALA NCHE (ms)

D

I

Limited by Package

0

25 50 75 100 125 150

T

,

c

R

= 2.3 oC/W

θ

JC

CASE TEMPERATURE

o

(

C

)

Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain

Current vs Case Temperature

1000

VGS = 10 V

THIS A REA IS
LIMITED BY r

Figure 11.

DS(on)

SINGLE PULSE

= MAX RATED

T

J

R

= 125 oC/W

θ

JA

= 25 oC

T

A

VDS, DRAIN to SOURCE VOLTAGE (V)

Forw a r d B i a s Safe

Operating Area

100 µs

1 ms
10 ms
100 ms

1 s
10 s

DC

100

10

SINGLE PULSE

PEAK TRANSIENT POWER (W)

,

)

R

= 125 oC/W

θ

0.5

JA

1

T

= 25 oC

A

PK

(

P

10-410-310-210-1110

t, PULSE WIDTH (sec)

Figure 12.

Single Pulse Maximum

Pow er Dissipation

100 1000

FDMS7572S Rev.C

4

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FDMS7572S N-Channel PowerTrench

Typical Characteristics T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

JA

θ

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

0.1

0.05

0.02

0.01

SINGLE PULSE
R

θ

JA

-4

10

-3

10

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

= 125 oC/W

-2

10

t, RECTANGULAR PULSE DURATION (sec)

-1

10

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

θJA

1/t2

x R

θJA

+ T

2

A

110

100 1000

®

SyncFET

FDMS7572S Rev.C

5

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Typical Characteristics (continued)

SyncFET Schottky body diode
Characteristics

FDMS7572S N-Channel PowerTrench

Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7572S.

25

20

15

di/dt = 300 A/µs

10

CURRENT (A)

5

0

-5
0 50 100 150 200

TIME (ns)

Figure 14. FDMS7572S SyncFET body

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high temper-
ature and high reverse voltage. This will increase the power in the
device.

-2

10

-3

10

-4

10

-5

10

, REVERSE LEAKAGE CURRENT (A)

-6

10

DSS

I

0 5 10 15 20 25

VDS, REVERSE VOLTAGE (V)

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage

®

SyncFET

FDMS7572S Rev.C

6

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Dimensional Outline and Pad Layout

FDMS7572S N-Channel PowerTrench

®

SyncFET

FDMS7572S Rev.C

7

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tm

®

tm

tm

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intended to be an exhaustive list of all such trademarks.

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MicroPak™
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Power-SPM™
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RapidConfigure™

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Saving our world, 1mW/W/kW at a time™
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SPM
STEALTH™
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SuperSOT™-3
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS7572S N-Channel PowerTrench

®

SyncFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or ( b) su pport or sustai n li fe,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

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committed to combat this global problem and encourage o ur customers to do their part in stopping this practice b y buying direct or from authorized dist ributors.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMS7572S Rev.C

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

8

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Rev. I45