Page 1
FDMS7560S
4
3
2
1
5
6
7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
N-Channel PowerTrench® SyncFETTM
25 V, 49 A, 1.45 mΩ
FDMS7560S N-Channel PowerTrench
August 2011
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.45 mΩ at VGS = 10 V, ID = 30 A
DS(on)
= 2.1 mΩ at VGS = 4.5 V, ID = 26 A
DS(on)
DS(on)
General Description
The FDMS7560S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for Synchronous Buck Converters
Notebook
Server
Telecom
High Efficiency DC-DC Switch Mode Power Supplies
®
SyncFET
TM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 180
Single Pulse Avalanche Energy (Note 3) 220 mJ
Power Dissipation TC = 25 °C 89
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
C
= 25 °C 181
C
= 25 °C (Note 1a) 30
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.4
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2011 Fairchild Semiconductor Corporation
FDMS7560S Rev.C1
FDMS7560S FDMS7560S Power 56 13 ’’ 12 mm 3000 units
1
www.fairchildsemi.com
Page 2
FDMS7560S N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 10 mA, referenced to 25 °C 21 mV/°C
D
= 0 V 500 μA
GS
= 0 V 100 nA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5 V, ID = 30 A 171 S
I
= 10 mA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 30 A 1.2 1.45
GS
= 4.5 V, ID = 26 A 1.6 2.1
GS
= 10 V, ID = 30 A, TJ = 125 °C 1.6 2.0
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1200 1560 pF
Reverse Transfer Capacitance 244 370 pF
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
4470 5945 pF
Gate Resistance 0.8 1.8 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 7.4 15 ns
Turn-Off Delay Time 41 66 ns
= 13 V, ID = 30 A,
V
DD
= 10 V, R
V
GS
GEN
= 6 Ω
16 29 ns
Fall Time 4.8 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 30 43 nC
Gate to Source Gate Charge 13.4 nC
V
DD
= 30 A
I
D
= 13 V,
66 93 nC
Gate to Drain “Miller” Charge 7.5 nC
mΩV
®
SyncFET
TM
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.40 0.7
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 39 63 nC
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
of 220 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 32 A.
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7560S Rev.C1
GS
= 0 V, IS = 30 A (Note 2) 0.76 1.2
V
GS
IF = 30 A, di/dt = 300 A/μs
2
35 56 ns
is guaranteed by design while R
θJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
www.fairchildsemi.com
Page 3
FDMS7560S N-Channel PowerTrench
012345
0
30
60
90
120
150
180
VGS = 3.5 V
VGS = 10 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 30 60 90 120 150 180
0
2
4
6
8
10
12
VGS = 2.5 V
VGS = 4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
VGS = 10 V
VGS = 3.5 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-75 -50 -25 0 25 50 75 100 125 150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
ID = 30 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
1
2
3
4
5
6
TJ = 125 oC
ID = 30 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
30
60
90
120
150
180
TJ = 125 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
180
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
®
SyncFET
TM
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
FDMS7560S Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
www.fairchildsemi.com
Page 4
FDMS7560S N-Channel PowerTrench
0 10203040506070
0
2
4
6
8
10
ID = 30 A
VDD = 13 V
V
DD
= 10 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 16 V
0.1 1 10 30
100
1000
10000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 100 500
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TI ME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
50
100
150
200
Limited by Pack age
R
θJC
= 1.4 oC/W
V
GS
= 4.5 V
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
c
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100
0.01
0.1
1
10
100
300
1 s
DC
100 ms
10 ms
1 ms
10 s
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-310
-2
10
-1
110
100 1000
0.5
1
10
100
1000
VGS = 10 V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
Typical Characteristics T
Figure 7.
Gate Charge Characteristics Fi gure 8.
= 25 °C unless otherwise noted
J
C a p a c i t a n c e v s D r a i n
to Source Voltage
®
SyncFET
TM
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
FDMS7560S Rev.C1
F ig u re 1 1. F or w ar d B ia s Sa f e
erating Area
Op
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 12.
S i n g l e P u l s e M a x i m u m
Power Dissipation
4
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Page 5
FDMS7560S N-Channel PowerTrench
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECT ANGULAR PULSE DURATION (s ec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
= 25 °C unless otherwise noted
J
®
SyncFET
TM
FDMS7560S Rev.C1
5
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Page 6
Typical Characteristics (continued)
0 5 10 15 20 25
10
-6
10
-5
10
-4
10
-3
10
-2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
I
DSS
, REVERSE LEAKAGE CURRENT (A)
VDS, REVERSE VOLTAGE (V)
0 50 100 150 200 250
-5
0
5
10
15
20
25
30
35
di/dt = 300 A/μs
CURRENT (A)
TIME (ns)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7560S.
FDMS7560S N-Channel PowerTrench
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
®
SyncFET
TM
Figure 14. FDMS7560S SyncFET body
diode reverse recovery characteristic
FDMS7560S Rev.C1
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
6
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Page 7
C
L
L
C
PKG
PKG
5.10
4.90
6.25
5.90
C
1.27
3.81
3.86
3.61
0.71
0.44
CHAMFER
CORNER
AS PIN #1
IDENT MAY
APPE AR AS
OP TION AL
TOP V IEW
SI DE VIEW
BOTTOM VIEW
1.27
3.81
1.27
6.61
3.91
4.52
1.27
1234
8567
14
85
LAND PATT ERN
RECOMMENDATION
12 34
876
0.10 C A B
0.46
0.36
(8X)
4.29
4.09
5
0.71
0.44
0.77
A
B
(0.39)
0.61
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STAN DARD REF ERENCE:
JEDEC MO- 240, IS SUE A, VAR. AA,
DATED OCTOBER 2002.
B) ALL DIMENSI ONS ARE IN MIL LIM ETER S.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EX CEED 0.10MM.
D) DIMENSIONING AND TO LERANCING PER
ASME Y14. 5M-19 94.
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VI AS WITHIN TH E KEEP OUT AR EA.
F) DRAWING FILE NAME: PQFN08AREV6.
SEE
DETAIL A
DETAIL A
SCALE: 2:1
0.05
0.00
0.30
0.20
0.08 C
6.25
5.90
5.85
5.65
5.10
4.90
6
OPTIONAL DRAFT
ANG LE MAY APPE AR
ON FOUR SI DES
OF THE PACKAGE
PIN #1
IDENT MAY
APPE AR AS
OP TION AL
SEAT ING
PLANE
0.10 C
1.10
0.90
OPT ION - A (SAWN TYPE)
OPT ION - B (PUNCHED TY PE)
KEEP O UT AREA
(1.19)
(1.81)
(0.50)
(3.40)
(0.52)
0.15 MAX (2X)
5.10
3.75
Dimensional Outline and Pad Layout
FDMS7560S N-Channel PowerTrench
®
SyncFET
FDMS7560S Rev.C1
7
TM
www.fairchildsemi.com
Page 8
TRADEMARKS
tm
®
tm
™
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
Auto-SPM™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
®
®
ESBC™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
®
FlashWriter
FPS™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
*
®
®
®
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
SM
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
®
®
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®
®
®*
The Power Franchise
The Right Technology for Your Success™
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
*
FDMS7560S N-Channel PowerTrench
®
SyncFET
TM
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS7560S Rev.C1
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I55
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