Datasheet FDMS4435BZ Datasheet (Fairchild)

Download

Page 1

FDMS4435BZ

Bottom

Power 56

Top

Pin 1

P-Channel PowerTrench® MOSFET

-30 V, -18 A, 20 mΩ Features

 Max r  Max r

 Extended V  High performance trench technology for extremely low r  High power and current handling capability  HBM ESD protection level >7 kV typical (Note 4)  100% UIL tested  Termination is Lead-free and RoHS Compliant

= 20 mΩ at VGS = -10 V, ID = -9.0 A

DS(on)

= 37 mΩ at VGS = -4.5 V, ID = -6.5 A

DS(on)

range (-25 V) for battery applications

GSS

DS(on)

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Applications

 High side in DC-DC Buck Converters  Notebook battery power management  Load switch in Notebook

March 2011

process that has

FDMS4435BZ P-Channel Power Trench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage -30 V Gate to Source Voltage ±25 V Drain Current -Continuous (Package limited) TC = 25 °C -18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -50 Single Pulse Avalanche Energy (Note 3) 18 mJ Power Dissipation TC = 25 °C 39 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C -35

= 25 °C (Note 1a) -9.0

= 25 °C (Note 1a) 2.5

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case 3.2 Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS4435BZ FDMS4435BZ Power 56 13 ’’ 12 mm 3000 units

www.fairchildsemi.com

Page 2

FDMS4435BZ P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = -24 V, V Gate to Source Leakage Current VGS = ±25 V, V

= -250 μA, referenced to 25 °C -23 mV/°C

= 0 V -1 μA

= 0 V ±10 μA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -1.0 -1.9 -3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= -250 μA, referenced to 25 °C 6 mV/°C

= -10 V, ID = -9.0 A 15 20

= -4.5 V, ID = -6.5 A 22 37

= -10 V, ID = -9.0 A

= 125 °C

21 28

Forward Transconductance VDS = -5 V, ID = -9.0 A 25 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 290 390 pF Reverse Transfer Capacitance 260 385 pF

= -15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 5 Ω

1540 2050 pF

mΩ

MOSFET

Switching Characteristics

d(on)

d(off)

Turn-On De lay Time Rise Time 10 18 ns Turn-Off Delay Time 35 56 ns Fall Time 19 33 ns Total Gate Charge VGS = 0 V to -10 V Total Gate Charge VGS = 0 V to -4.5 V 18 25 nC Gate to Source Charge 5 nC Gate to Drain “Miller” Charge 9 nC

= -15 V, ID = -9.0 A,

= -10 V, R

GEN

Drain-Source Diode Characteristics

= 0 V, IS = -1.9 A (Note 2) 0.75 1.2

Notes:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1 .5 x 1.5 in . boa rd o f FR- 4 m ateria l. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 12 21 nC

50 °C/W when mounted on a

1 in

pad of 2 oz copper

= 0 V, IS = -9.0 A (Note 2) 0.86 1.5

= -9.0 A, di/dt = 100 A/μs

= 6 Ω

= -9.0 A

= -15 V,

θJC

917ns

34 47 nC

25 39 ns

is guaranteed by design while R

b) 125 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θCA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E

of 18 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = -6 A, VDD = -27 V, VGS = -10 V. 100% tested at L = 0.3 mH, IAS = -8 A.

4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

www.fairchildsemi.com

Page 3

FDMS4435BZ P-Channel PowerTrench

01234

VGS = -6 V

VGS = -3.5 V

VGS = -10 V

VGS = -4 V

VGS = -4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

-I

, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

0 1020304050

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = -4 V

VGS = -3.5 V

VGS = -6 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

-ID, DRAIN CURRENT (A)

VGS = -4.5 V

= -10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = - 9 A V

= -10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

246810

TJ = 125 oC

ID = -9 A

TJ = 25 oC

-V

, GATE TO SOURCE V OLTAGE (V )

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

12345

TJ = 25 oC

= -5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 125 oC

-I

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VO LTAGE (V)

0.00.20.40.60.81.01.21.4

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

= 0 V

-I

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Nor mal ize d On-R esi sta nce

vs Drain Current and Gate Voltage

MOSFET

Figur e 3. No rma li zed On - Re si sta nc e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resist ance vs Gate to

Source Voltage

Figure 6.

Source to D rain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

Page 4

FDMS4435BZ P-Channel PowerTrench

0 8 16 24 32 40

ID = -9 A

VDD = -20 V

= -15 V

-V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -10 V

0.1 1 10 30

100

1000

5000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.01 0.1 1 10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE ( ms)

-I

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

Package Limited

θJC

= 3.2 oC/W

= -4.5 V

= -10 V

-I

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

03691215182124273033

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

= 0 V

TJ = 125 oC

TJ = 25 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

-I

, GATE LEAKAGE CURRENT (A)

0.05 0.1 1 10 100

0.01

0.1

100

THIS AREA IS LIMITED BY r

DS(on)

100 μs

1 ms

100 ms

1 s

10 s

10 ms

SINGLE PULSE T

= MAX RATED

θJA

= 125

C/W

TA = 25

-I

, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25 °C unless otherwise noted

Figure 8.

Cap aci t anc e vs Dra in

to Source Voltage

MOSFET

Figure 9.

Unc l amp e d In d uct i ve

Switching Capability

Figure 11.

Gat e Leak age Cur ren t vs Ga te t o

Source Voltage

Figure 10.

Maximum Co nt inuou s D rain

Current vs Cate Temperature

Figur e 12. Forward Bias Safe

Operating Area

www.fairchildsemi.com

Page 5

FDMS4435BZ P-Channel PowerTrench

-4

-3

-2

-1

110

100 1000

0.5

100

1000

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 125 oC/W

= 25 oC

t, PULSE WIDTH (sec)

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Single Pulse Maximum Power Dissipation

= 25 °C unless otherwise noted

MOSFET

Figure 14. Junction-to-Ambient Transient Thermal Response Curve

www.fairchildsemi.com

Page 6

FDMS4435BZ P-Channel PowerTrench

Dimensional Outline and Pad Layout

MOSFET

www.fairchildsemi.com

Page 7

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semi conductor and/or its glob al subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™

PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™ ®*

™

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMS4435BZ P-Channel PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing proble m in the in dustry. All manufactur es of semiconductor produ cts are experiencing counterfeiting of their

parts. Customers who inadvertently purchase count erfeit parts exper ience many problems such as l oss of bra nd reputat ion , su bsta ndard pe rfo rmance, f ailed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild str ongly encourages customers t o purchase Fairchild par ts either d irectly from Fairchi ld or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fa irchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

committed to combat this global problem and encourage our customers to do their part in stopping this pr actice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

www.fairchildsemi.com

Rev. I51

Datasheet FDMS4435BZ Datasheet (Fairchild)

Specifications and Main Features

Frequently Asked Questions

User Manual