Page 1
tm
FDMS3672
N-Channel UltraFET Trench MOSFET
100V, 22A, 23mΩ
Features
Max r
Max r
Typ Qg = 31nC at VGS = 10V
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
= 23mΩ at VGS = 10V, ID = 7.4A
DS(on)
= 29mΩ at VGS = 6V, ID = 6.6A
DS(on)
General Description
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.
DS(on)
Application
DC - DC Conversion
FDMS3672 N-Channel UltraFET Trench MOSFET
February 2007
, low ESR, low total and Miller gate charge,
Pin 1
S
D
D
Power (Bottom view)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 22
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 30
Power Dissipation TC = 25°C 78
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
S
G
D
5
D
6
7
D
D
D
D
= 25°C unless otherwise noted
A
C
A
8
= 25°C 41
= 25°C (Note 1a) 7.4
A
= 25°C (Note 1a) 2.5
G
4
S
3
S
2
S
1
Thermal Characteristics
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.6
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS3672 FDMS3672 Power 56 13’’ 12mm 3000 units
©2007 Fairchild Semiconductor Corporation
FDMS3672 Rev.C
°C/W
1
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Page 2
FDMS3672 N-Channel UltraFET Trench MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V, V
ID = 250µA, referenced to 25°C 104 mV/°C
VDS = 80V, 1
V
= 0V TJ = 55°C 10
GS
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 3.1 4 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS = 10V, ID = 7.4A 20 S
ID = 250µA, referenced to 25°C -11 mV/°C
VGS = 10V, ID = 7.4A 19 23
VGS = 10V, ID = 7.4A, TJ = 125°C 33 40
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 210 280 pF
Reverse Transfer Capacitance 90 135 pF
VDS = 50V, VGS = 0V,
f = 1MHz
2015 2680 pF
Gate Resistance f = 1MHz 1.3 Ω
µA
mΩVGS = 6V, ID = 6.6A 24 29
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 11 20 ns
Turn-Off Delay Time 36 58 ns
VDD = 50V, ID = 7.4A
VGS = 10V, R
GEN
Fall Time 8 16 ns
Total Gate Charge at 10V V
Total Gate Charge at 4.5V V
= 0V to 10V
GS
= 0V to 4.5V nC
GS
Gate to Source Gate Charge 9.5 nC
Gate to Drain “Miller” Charge 8 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
the user's board design.
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 101 152 nC
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR -4 mate rial. R
a. 50°C/W when mounted on
2
a 1 in
pad of 2 oz copper
= 0V, IS = 7.4A (Note 2) 0.8 1.2 V
GS
IF = 7.4A, di/dt = 100A/µs
= 6Ω
VDD = 50V
ID = 7.4A
23 37 ns
31 44 nC
52 78 ns
is guaranteed by design while R
θJC
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
is determined by
θCA
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMS3672 Rev.C
2
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Page 3
FDMS3672 N-Channel UltraFET Trench MOSFET
Typical Characteristics T
60
VGS = 10V
50
40
30
20
, DRAIN CURRENT (A)
D
10
I
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAIN TO SOURCE VOLTA GE (V)
Figure 1.
2.0
1.8
On-Region Characteristics Figure 2.
ID = 7.4A
V
= 10V
GS
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
0.4
DRAIN TO SOURCE ON-RESISTANCE
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figur e 3 . Norm al ized O n- Resis ta nce
vs Junction Temperature
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 8V
VGS = 6V
VGS = 5V
= 25°C unless otherwise noted
J
3.0
PULSE DURATION = 80µs
2.5
VGS = 5V
DUTY CYCLE = 0.5%MAX
VGS = 6V
2.0
1.5
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 102030405060
ID, DRAIN CURRENT(A)
V
GS
V
Nor ma liz ed On- Res is tan ce
vs Drain Current and Gate Voltage
60
ID = 7.4A
50
(mΩ)
40
30
, DRAIN TO
DS(on)
r
20
SOURCE ON-RESISTANCE
10
4.5 6.0 7.5 9.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4.
On-Resistance vs Gate to
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
o
T
= 25
C
J
Source Voltage
GS
= 8V
= 10V
10
30
25
20
15
10
, DRAIN CURRENT (A)
D
I
FDMS3672 Rev.C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
TJ = 25oC
5
TJ = -55oC
0
2345678
VGS, GATE TO SOURCE VOLTA G E (V)
Figure 5. Transfer Characteristics
100
V
= 0V
GS
10
TJ = 150oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWA RD VO LT AGE (V)
Figure 6.
Source to Drain Diode
TJ = 25oC
TJ = -55oC
Forward Voltage vs Source Current
3
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Page 4
FDMS3672 N-Channel UltraFET Trench MOSFET
Typical Characteristics T
10
ID = 7.4A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
0
GS
V
0 10203040
Figure 7.
Gate Charge Characteristics Figure 8.
20
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100
Figure 9.
Switching Capability
V
= 25V
DD
Qg, GATE CHARGE(nC)
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
Unc l amp ed I ndu c tiv e
= 25°C unless otherwise noted
J
VDD = 50V
VDD = 75V
TJ = 25oC
300
10000
C
iss
1000
C
oss
100
CAPACITANCE (pF)
f = 1MHz
= 0V
V
GS
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
Cap aci tan ce v s Dr ain
to Source Voltage
50
40
V
= 10V
GS
30
V
= 6V
GS
20
, DRAIN CURRENT (A)
D
I
10
R
= 1.6oC/W
θJC
0
25 50 75 100 125 150
Limited by P ack ag e
TC, CASE TEMPERA TURE (oC)
Figure 10.
Ma ximum Co ntinuou s Drain
Current vs Case Temperature
60
0.1
, DRAIN CURRENT (A)
D
0.01
I
1E-3
FDMS3672 Rev.C
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
= MAX RATED
T
J
= 25OC
T
A
0.1 1 10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
100us
1ms
10ms
100ms
1s
10s
DC
400
2000
), PEAK TRANSIENT POWER (W)
P(
1000
100
PK
10
1
0.3
-3
10
Figure 12.
VGS = 10V
SINGLE PULSE
-2
10
10
t, PULSE WID T H (s )
Single Pulse Maximum
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
-1
0
10
o
C DERATE PEAK
150 TA–
---------------------- -
25
1
10
125
TA = 25oC
2
10
3
10
Power Dissipation
4
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Page 5
FDMS3672 N-Channel UltraFET Trench MOSFET
Typical Characteristics T
2
NORMALIZED THERMAL
θJA
0.1
0.01
IMPEDANCE, Z
1E-3
5E-4
1
10
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-3
-2
10
= 25°C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
2
10
3
10
FDMS3672 Rev.C
5
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Page 6
FDMS3672 N-Channel UltraFET Trench MOSFET
FDMS3672 Rev.C
6
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Page 7
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FDMS3672 N-Channel UItraFET Trench MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain
life, or (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDMS3672 Rev. C
Rev. I22
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