Datasheet FDME905PT Datasheet (Fairchild)

FDME905PT

MicroFET 1.6x1.6 Thin

G

D

D

TOP BOTTOM

Pin 1

D

G

D

S

D

D

S

D

D

5

1

6

2

3

4

Bottom Drain Contact

P-Channel PowerTrench® MOSFET

-12 V, -8 A, 22 mΩ
Features

 Max r
 Max r
 Max r
 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides
 RoHS Compliant

= 22 mΩ at VGS = -4.5 V, ID = -8 A

DS(on)

= 26 mΩ at VGS = -2.5 V, ID = -7.3 A

DS(on)

= 97 mΩ at VGS = -1.8 V, ID = -3.8 A

DS(on)

General Description

This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.

November 2011

FDME905PT P-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC
θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2

Drain to Source Voltage -12 V
Gate to Source Voltage ±8 V
Drain Current -Continuous TA = 25 °C (Note 1a) -8

-Pulsed -30
Power Dissipation TA = 25 °C (Note 1a) 2.1
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 4.5
Thermal Resistance, Junction to Ambient (Note 1a) 60
Thermal Resistance, Junction to Ambient (Note 1b) 175

E95 FDME905PT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.7

A

1

A

W

°C/WR

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FDME905PT P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -12 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -9.6 V, V
Gate to Source Leakage Current VGS = ±8 V, V

I

= -250 μA, referenced to 25 °C -8.7 mV/°C

D

= 0 V -1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.7 -1.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

I

= -250 μA, referenced to 25 °C 2.5 mV/°C

D

= -4.5 V, ID = -8 A 18 22

V

GS

V

= -2.5 V, ID = -7.3 A 22 26

GS

= -1.8 V, ID = -3.8 A 28 97

V

GS

= -4.5 V, ID = -8 A, TJ = 125 °C 23 32

V

GS

Forward Transconductance VDS = -5 V, ID = -8 A 38 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 350 525 pF
Reverse Transfer Capacitance 311 465 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Rise Time 816ns
Turn-Off Delay Time 90 144 ns
Fall Time 42 67 ns
Total Gate Charge
Gate to Source Gate Charge 2.4 nC
Gate to Drain “Miller” Charge 3 nC

V

= -6 V, VGS = 0 V,

DS

f = 1 MHz

= -6 V, ID = -8 A,

V

DD

V

= -4.5 V, R

GS

= -6 V, ID = -8 A,

V

DD

V

= -4.5 V

GS

GEN

= 6 Ω

1740 2315 pF

9.5 19 ns

14 20 nC

mΩ

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boa rd of FR-4 mater ial. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 4.5 10 nC

V
V

I

F

a. 60 °C/W when mounted on

2

a 1 in

pad of 2 oz copper.

= 0 V, IS = -8 A (Note 2) -0.8 -1.2

GS

= 0 V, IS = -1.8 A (Note 2) -0.7 -1.2

GS

= -8 A, di/dt = 100 A/μs

θJC

2

17 31 ns

is guaranteed by design while R

b. 175 °C/W when mounted on a
minimum pad of 2 oz copper.

V

is determined by

θCA

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FDME905PT P-Channel PowerTrench

0.00.51.01.5

0

10

20

30

VGS = -2.5 V

VGS = -1.8 V

VGS = -4.5 V

VGS = -3 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-I

D

, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

0102030

0

1

2

3

VGS = -1.8 V

VGS = -2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

VGS = -3 V

V

GS

= -4.5 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

ID = -8 A
V

GS

= -4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NC E

T

J

, JUNCTION TEMPERATURE (

o

C)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

20

40

60

80

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = 125 oC

T

J

= 25

o

C

ID = -8 A

r

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

-VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.5 1.0 1.5 2.0

0

10

20

30

TJ = 25 oC

V

DS

= -5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 150 oC

-I

D

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

50

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

-I

S

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Nor m a lized O n - R esist a n c e

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2

Figure 5. Transfer Characteristics

Figure 4.

On-Resista nce vs Gate to

Source Voltage

Figure 6.

Source to Dr ai n Diode

Forward Voltage vs Source Current

3

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FDME905PT P-Channel PowerTrench

0481216

0.0

1.5

3.0

4.5

ID = -8 A

VDD = -6 V

V

DD

= -5 V

-V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -7 V

0.1 1 10 20

100

1000

3000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.1 1 10 30

0.001

0.01

0.1

1

10

100

THIS AREA IS
LIMITED BY r

DS(on)

100 μs
1 ms

100 ms

1 s

DC

10 s

10 ms

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 175

o

C/W

TA = 25

o

C

-I

D

, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

10-410-310-210

-1

110

100 1000

0.5

1

10

100

300

SINGLE PULSE
R

θJA

= 175 oC/W

T

A

= 25 oC

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s)

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 175 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PU L SE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Forward Bias Safe

Operating Area

Figure 11. Junction-to-Ambient Transient Thermal Response Curve

©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2

Figure 10.

Single Pulse Maximum

Power Dissipation

4

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Dimensional Outline and Pad Layout

FDME905PT P-Channel PowerTrench

®

MOSFET

©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2

5

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®

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discont inued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I60

6

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