Datasheet FDME820NZT Datasheet (Fairchild)

FDME820NZT

MicroFET 1.6x1.6 Thin

G

D

D

TOP

BOTTOM

Pin 1

D

G

D

S

D

D

S

D

D

N-Channel PowerTrench® MOSFET

20 V, 9 A, 18 mΩ
Features

 Max r
 Max r
 Max r
 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides
 HBM ESD protection level >2.5 kV (Note3)
 RoHS Compliant

= 18 mΩ at VGS = 4.5 V, ID = 9 A

DS(on)

= 24 mΩ at VGS = 2.5 V, ID = 7.5 A

DS(on)

= 32 mΩ at VGS = 1.8 V, ID = 7 A

DS(on)

General Description

This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the r
leadframe.

DS(ON)

Applications

 Li-lon Battery Pack
 Baseband Switch
 Load Switch
 DC-DC Conversion

FDME820NZT N-Channel PowerTrench

April 2012

@ VGS = 1.8 V on special MicroFET

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage 20 V
Gate to Source Voltage ±12 V
Drain Current -Continuous TA = 25 °C (Note 1a) 9

-Pulsed 40
Power Dissipation for Single Operation TA = 25 °C (Note 1a) 2.1
Power Dissipation for Single Operation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Note 1a) 70
Thermal Resistance, Junction to Ambient (Note 1b) 190

8T FDME820NZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.7

A

1

A

W

°C/W

www.fairchildsemi.com

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 16 V, V
Gate to Source Leakage Current VGS = ±12 V, V

I

= 250 μA, referenced to 25 °C 20 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±10 μA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.5 0.8 1.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -3 mV/°C

D

V

= 4.5 V, ID = 9 A 14 18

GS

= 2.5 V, ID = 7.5 A 17 24

V

GS

= 1.8 V, ID = 7 A 26 32

V

GS

= 4.5 V, ID = 9 A ,

V

GS

T

= 125 °C

J

19 24

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 203 pF
Reverse Transfer Capacitance 190 pF

= 10 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 1.0 Ω

865 pF

FDME820NZT N-Channel PowerTrench

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 5ns
Turn-Off Delay Time 19 ns
Fall Time 5ns
Total Gate Charge VDD = 4.2 V, ID = 3 A, V
Total Gate Charge VDD = 4.2 V, ID = 3 A, V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge 3.2 nC

= 10 V, ID = 4 A

V

DD

V

= 4.5 V, R

GS

= 10 V, ID = 9 A

V

DD

GEN

Drain-Source Diode Characteristics

V

= 0 V, IS = 1.6 A (Note 2) 0.7 1.2 V

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 mate rial. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 4 nC

a. 70 °C/W when mounted on
a 1 in2 pad of 2 oz copper.

GS

= 0 V, IS = 9 A (Note 2) 0.8 1.2 V

V

GS

F = 9 A, di/dt = 100 A/us

I

= 2 Ω

G

9ns

= 4.3 V 8.0 nC

GS

= 4.5 V 8.5 nC

GS

1.4 nC

18 ns

is guaranteed by design while R

DF

DS

θJC

b. 190 °C/W when mounted on a
minimum pad of 2 oz copper.

SS

SF

θCA

is determined by

SS

SF

DS

G

DF

2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C

2

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FDME820NZT N-Channel PowerTrench

0 0.5 1.0 1.5 2.0 2.5

0

10

20

30

40

VGS = 1.5 V

VGS = 2.5 V

VGS = 1.8 V

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V
VGS = 3 V

VGS = 2 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0 10203040

0

1

2

3

4

5

V

GS

= 2 V

VGS = 1.5 V

VGS = 2.5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 3 V

V

GS

= 1.8 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 9 A
V

GS

= 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

0.91.82.73.64.5

0

20

40

60

80

TJ = 125 oC

ID = 9 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

1000

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor mal ized O n-R esi sta nce

vs Drain Current and Gate Voltage

®

MOSFET

Fi gure 3. N or malized On Re sistanc e

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Ga te to

Source Voltage

Figure 6.

Source to D rain Diode

Forward Voltage vs Source Current

3

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FDME820NZT N-Channel PowerTrench

036912

0.0

0.9

1.8

2.7

3.6

4.5

ID = 9 A

VDD = 12 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 8 V

0.1 1 10 20

100

1000

2000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.001 0.01 0.1 1 10 100

1

10

20

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

0369121518

10

-10

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

V

GS

= 0 V

TJ = 125 oC

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

I

g

, GATE LEAKAGE CURRENT (A)

0.01 0.1 1 10 100

0.01

0.1

1

10

100

100 us

1 ms

1 s

10 ms

DC

10 s

100 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 190

o

C/W

T

A

= 25

o

C

10-410-310-210-1110

100 1000

0.1

1

10

100

1000

SINGLE PULSE
R

θJA

= 190

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (s)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Cap aci t anc e vs Dra in

to Source Voltage

®

MOSFET

Figure 9.

Unc l amp e d In d uct i ve

Switching Capability

©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C

Figure 11. Forward Bias Safe

Op

erating Area

Figure 10.

Gate Leakage Current vs Gate

to Source Voltage

Figure 12.

Single P ulse Ma ximum

Power Dissipation

4

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FDME820NZT N-Channel PowerTrench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

SINGLE PULSE
R

θJA

= 190 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (s)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13.

= 25 °C unless otherwise noted

J

Junction-to-Ambient Transient Thermal Response Curve

®

MOSFET

©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C

5

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Dimensional Outline and Pad Layout

BOTTOM VIEW

SIDE VIEW

TOP VIEW

RECOMMENDED LAND PATTERN OPT 1

0.10 C A B

0.05 C

0.10 C

0.08 C

C

1.60

1.60

0.10 C

2X

2X

0.10

C

(0.15)

0.50

1.00

0.72

0.62

(0.20)

PIN #1 I DEN T

(0.125)

(0.40)

RECOMMENDED LAND PATTERN OPT 2

NOTES:

A. DOES NOT FULLY CONFORM TO JEDEC

REGISTRATION
B. DIMEN SION S ARE IN MILLI METERS .
C. DIMENSIONS AND TOLERANCES PER

ASME Y14.5M , 1994.
D. LAND PATTERN RECOMMEND ATION IS

BASED ON FSC DESIGN ONLY
E. DRAWING FILENAME: MKT-UMLP06Frev4

13

46

46

3

1

0.55

0.40

1.90

0.65

No vias or traces
allowed in
thi s ar e a

0.15

0.670

0.570

0.30

0.20

2X

0.05

0.00

0.55 MAX

(0.55)

0.30

0.20

2X

0.50

0.30

0.35

4

6

31

0.55

(0.4 0)

1.90

0.65

0.15

0.50

0.30

0.35

0.62

0.20

No vias or traces

allowed in
th is ar ea

1.150

1.050

FDME820NZT N-Channel PowerTrench

®

MOSFET

©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C

6

www.fairchildsemi.com

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THEREIN, WHICH COVERS THESE PRODUCTS.

FDME820NZT N-Channel PowerTrench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

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Rev. I61