Datasheet FDME1034CZT Datasheet (Fairchild)

FDME1034CZT

G2

S1

G1

D2

S2

D1

MicroFET 1.6x1.6 Thin

D1

D2

TOP

BOTTOM

Pin 1

Complementary PowerTrench® MOSFET

N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ

FDME1034CZT Complementary PowerTrench

July 2010

Features

Q1: N-Channel

 Max r  Max r  Max r  Max r

Q2: P-Channel

 Max r  Max r  Max r  Max r

 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony

oxides

 HBM ESD protection level > 1600 V (Note 3)  RoHS Compliant

= 66 mΩ at VGS = 4.5 V, ID = 3.4 A

DS(on)

= 86 mΩ at VGS = 2.5 V, ID = 2.9 A

DS(on)

= 113 mΩ at VGS = 1.8 V, ID = 2.5 A

DS(on)

= 160 mΩ at VGS = 1.5 V, ID = 2.1 A

DS(on)

= 142 mΩ at VGS = -4.5 V, ID = -2.3 A

DS(on)

= 213 mΩ at VGS = -2.5 V, ID = -1.8 A

DS(on)

= 331 mΩ at VGS = -1.8 V, ID = -1.5 A

DS(on)

= 530 mΩ at VGS = -1.5 V, ID = -1.2 A

DS(on)

General Description

This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Applications

 DC-DC Conversion  Level Shifted Load Switch

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage 20 -20 V Gate to Source Voltage ±8 ±8 V Drain Current -Continuous TA = 25 °C (Note 1a) 3.8 -2.6

-Pulsed 6 -6 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4 Power Dissipation for Single Operation T Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195

5T FDME1034CZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.6

A

W

°C/W

FDME1034CZT Complementary PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

= 250 μA, VGS = 0 V

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current

D

I

= -250 μA, VGS = 0 V

D

ID = 250 μA, referenced to 25 °C I

= -250 μA, referenced to 25 °CQ1Q2

D

V

= 16 V, V

DS

V

= -16 V, V

DS

Gate to Source Leakage Current VGS = ±8 V, V

= 0 V

GS

= 0 V

GS

= 0 V All ±10 μA

DS

Q1 Q220-20

Q1 Q2

V

16

-12

mV/°C

1

-1

I

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

= VDS, ID = 250 μA

GS

V

= VDS, ID = -250 μA

GS

I

= 250 μA, referenced to 25 °C

D

V

= 4.5 V, ID = 3.4 A

GS

= 2.5 V, ID = 2.9 A 68 86

V

GS

= 1.8 V, ID = 2.5 A 85 113

V

GS

= 1.5 V, ID = 2.1 A 106 160

V

GS

= 4.5 V, ID = 3.4 A,

V

GS

T

=125°C

J

V

= -4.5 V, ID = -2.3 A

GS

= -2.5 V, ID = -1.8 A 120 213

V

GS

= -1.8 V, ID = -1.5 A 150 331

V

GS

= -1.5 V, ID = -1.2 A 190 530

V

GS

= -4.5 V, ID = -2.3 A ,

V

GS

T

= 125 °C

J

V

= 4.5 V, ID =3.4 A

DS

V

= -4.5 V, ID = -2.3 A

DS

Q1Q20.4

-0.4

Q1 Q2

Q1

Q2

Q1 Q2

0.7

-0.6

-3 2

1.0

-1.0

55 66

76 112 95 142

128 190

9 7

mV/°C

μA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1 V

= 10 V, VGS = 0 V, f = 1 MHz

DS

Q2 V

= -10 V, VGS = 0 V, f = 1 MHz

DS

Q1 Q2

225 305

40 55

25 50

300 405

55 75

40 75

pF

Q1 V

= 10 V, ID = 1 A,

DD

V

= 4.5 V, R

GS

Q2 V

= -10 V, ID = -1 A,

DD

V

= -4.5 V, R

GS

Q1

= 10 V, ID = 3.4 A,

V

DD

V

= 4.5 V

GS

Q2 V

= -10 V, ID = -2.3 A,

DD

V

= -4.5 V

GS

GEN

= 6 Ω

Q1 Q2

4.5

4.7

2.0

4.8 15

33

1.7 16

3

5.5

0.4

0.6

1.4

10 10

27 53

10 29

4.2

7.7

ns

nCQ

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boa rd of FR-4 mate rial. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

V

= 0 V, IS = 0.9 A (Note 2)

GS

V

= 0 V, IS = -0.9 A (Note 2)Q1Q2

GS

Q1 I

= 3.4 A, di/dt = 100 A/μS

F

Q2 I

= -2.3 A, di/dt = 100 A/μs

F

0.7

-0.8

Q1 Q2

is guaranteed by design while R

θJC

8.5 16

1.4

4.4

1.2

-1.2 17

29 10

10

is determined by

θCA

FDME1034CZT Complementary PowerTrench

V

ns

nC

a. 90 °C/W when mounted on a 1 in2 pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

b. 195 °C/W when mounted on a minimum pad of 2 oz copper.

®

MOSFET

FDME1034CZT Complementary PowerTrench

0.0 0.5 1.0 1.5

0

2

4

6

VGS = 1.8 V

VGS = 3 V

VGS = 4.5 V

VGS = 1.5 V

VGS = 2.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0246

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 2.5 V

VGS = 3 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 1.8 V

VGS = 1.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 3.4 A V

GS

= 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

50

100

150

200

250

300

TJ = 125 oC

ID = 3.4 A

TJ = 25 oC

V

GS

, GATE TO SO U RCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

0.0 0.5 1.0 1.5 2.0

0

2

4

6

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

Norm a l i z e d O n -Resistan c e

vs Drain Current and Gate Voltage

®

MOSFET

Fi g ure 3 . Nor m aliz e d On R esis t ance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

FDME1034CZT Complementary PowerTrench

0123

0.0

1.5

3.0

4.5

ID = 3.4 A

VDD = 10 V

V

DD

= 8 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 12 V

0.1 1 10 20

1

100

500

f = 1 MHz V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.1 1 10 50

0.01

0.1

1

10

1 s

100 μs

DC

100 ms

10 ms

1 ms

10 s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

J

= MAX RATED

R

θJA

= 195

o

C/W

T

A

= 25

o

C

0 3 6 9 12 15

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

V

GS

= 0 V

TJ = 25 oC

TJ = 125 oC

V

GS

,

GATE TO SOURCE VO LTAGE (V)

I

g

, GATE LEAKAGE CURRENT (A)

10

-4

10

-3

10

-2

10

-1

110

100 1000

1

10

100

P

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 195 oC/W

T

A

= 25 oC

t, PULSE WIDTH (s)

0.5

Typical Characteristics (Q1 N-Channel) T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25°C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Fo r w a rd Bi a s Safe

Operating Area

Figure 11. Single Pulse Maximum Power Dissipation

Figure 10.

Gate Leakage Current vs

Gate to Source Voltage

FDME1034CZT Complementary PowerTrench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.005

0.01

0.1

1

2

SINGLE PULSE R

θJA

= 195 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES: DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics (Q1 N-Channel) T

Figure 12.

Junction-to-Ambient Transient Thermal Response Curve

= 25°C unless otherwise noted

J

®

MOSFET

FDME1034CZT Complementary PowerTrench

0 0.5 1.0 1.5 2.0

0

2

4

6

VGS = -3 V

VGS = -2.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = - 1.8 V

VGS = -1.5 V

VGS = -4.5 V

-I

D

, DRAIN CURRENT (A)

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0246

0

1

2

3

VGS = -1.8 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-I

D

, DRAIN CURRENT (A)

V

GS

= -4.5 V

VGS = -2.5 V

VGS = -1.5 V

V

GS

= -3 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = -2.3 A V

GS

= -4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

1.01.52.02.53.03.54.04.5

0

100

200

300

400

500

ID = -2.3 A

TJ = 25 oC

TJ = 125 oC

-V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

0.0 0.5 1.0 1.5 2.0

0

2

4

6

V

DS

= -5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

-I

D

, DRAIN CURRENT (A)

-VGS, GATE TO SOURC E V O LTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

-I

S

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q2 P-Channel) T

Figure 13. On- Region Characteristics Figure 14. Normalized on-Resistance vs Drain

= 25 °C unless otherwise noted

J

Current and Gate Voltage

®

MOSFET

Figure 15. Normalized On-Resistance

vs Junction Temperature

Figure 17. Transfer Characteristics Figure 18. Source to Drain Diode

Figure 16. On-Resistance vs Gate to

Source Voltage

Forward Voltage vs Source Current

FDME1034CZT Complementary PowerTrench

0246

0.0

1.5

3.0

4.5

ID = -2.3 A

VDD = -10 V

V

DD

= -8 V

-V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -12 V

0.1 1 10 20

10

100

1000

f = 1 MHz V

GS

= 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.1 1 10 60

0.01

0.1

1

10

100 us

DC

10 s

1 s

100 ms

10 ms

1 ms

-I

D

, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

J

= MAX RATED

R

θJA

= 195

o

C/W

T

A

= 25

o

C

03691215

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

V

DS

= 0 V

TJ = 25 oC

TJ = 125 oC

-V

GS

,

GATE TO SOURC E VO L TA G E (V)

-I

g

,

GATE LEAKAGE CURRENT (A)

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.3

1

10

100

1000

P

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 195 oC/W

T

A

= 25 oC

t, PULSE WIDTH (s)

Typical Characteristics (Q2 P-Channel) T

Figure 19. Gate Charge Characteristics

= 25°C unless otherwise noted

J

Figure 20. Capacitance vs Drain

to Source Volt age

®

MOSFET

Figure 21. Forw ard Bias Sa fe

Operating Area

Fi gure 22. Gate Lea kag e Current vs

Gate to Source Voltage

Fig 23. Single Pulse Maximum Power Dissipation

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

SINGLE PULSE R

θJA

= 195 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (s)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES: DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

FDME1034CZT Complementary PowerTrench

Typical Characteristics (Q2 P-Channel) T

Figure 24. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

®

MOSFET

Dimensional Outline and Pad Layout

FDME1034CZT Complementary PowerTrench

®

MOSFET

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®

The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

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Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

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*

F-PFS™

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®

MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

®

SM

®

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™

®

™

®

Sync-Lock™

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®

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDME1034CZT Complementary PowerTrench

®

MOSFET

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As used here in:

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PRODUCT STATUS DEFINITIONS Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specificatio ns for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fai r child Semiconductor. The datashe et is for reference information only.

Rev. I48

Datasheet FDME1034CZT Datasheet (Fairchild)

Specifications and Main Features

Frequently Asked Questions

User Manual