Datasheet FDME1024NZT Datasheet (Fairchild)

FDME1024NZT

G2

S1

G1

D2

S2

D1

MicroFET 1.6x1.6 Thin

D1

D2

BOTTOM

Pin 1

TOP

Dual N-Channel PowerTrench® MOSFET

20 V, 3.8 A, 66 mΩ

Features

 Max r
 Max r
 Max r
 Max r

 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides
 HBM ESD protection level > 1600 V (Note 3)
 RoHS Compliant

= 66 mΩ at VGS = 4.5 V, ID = 3.4 A

DS(on)

= 86 mΩ at VGS = 2.5 V, ID = 2.9 A

DS(on)

= 113 mΩ at VGS = 1.8 V, ID = 2.5 A

DS(on)

= 160 mΩ at VGS = 1.5 V, ID = 2.1 A

DS(on)

General Description

This device is designed specifically as a single package solution
for dual switching requirement in cellular handset and other
ultra-portable applications. It features two independent
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.

Applications

 Baseband Switch
 Load Switch

FDME1024NZT Dual N-Channel PowerTrench

July 2010

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

©2010 Fairchild Semiconductor Corporation
FDME1024NZT Rev.C1

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage 20 V
Gate to Source Voltage ±8 V
Drain Current -Continuous TA = 25 °C (Note 1a) 3.8

-Pulsed 6
Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4
Power Dissipation for Single Operation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90
Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195

4T FDME1024NZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.6

A

1

A

W

°C/W

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FDME1024NZT Dual N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 16 V, V
Gate to Source Leakage Current VGS = ±8 V, V

= 250 μA, referenced to 25 °C 16 mV/°C

I

D

= 0 V 1 μA

GS

= 0 V ±10 μA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.4 0.7 1.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 4.5 V, ID = 3.4 A 9 S

I

= 250 μA, referenced to 25 °C -3 mV/°C

D

V

= 4.5 V, ID = 3.4 A 55 66

GS

= 2.5 V, ID = 2.9 A 68 86

V

GS

= 1.8 V, ID = 2.5 A 85 113

V

GS

= 1.5 V, ID = 2.1 A 106 160

V

GS

= 4.5 V, ID = 3.4 A, TJ = 125 °C 76 112

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 40 55 pF
Reverse Transfer Capacitance 25 40 pF

= 10 V, VGS = 0 V,

V

DS

f = 1 MHz

225 300 pF

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Rise Time 2 10 ns
Turn-Off Delay Time 15 27 ns

= 10 V, ID = 1 A,

V

DD

V

= 4.5 V, R

GS

GEN

Fall Time 1.7 10 ns
Total Gate Charge
Gate to Source Gate Charge 0.4 nC
Gate to Drain “Miller” Charge 0.6 nC

= 10 V, ID = 3.4 A,

V

DD

V

= 4.5 V

GS

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 1.4 10 nC

a. 90 °C/W when mounted on

2

a 1 in

pad of 2 oz copper.

= 0 V, IS = 0.9 A (Note 2) 0.7 1.2 V

GS

= 3.4 A, di/dt = 100 A/μs

I

F

= 6 Ω

4.5 10 ns

3 4.2 nC

8.5 17 ns

is guaranteed by design while R

θJC

b. 195 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

FDME1024NZT Rev.C1

2

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FDME1024NZT Dual N-Channel PowerTrench

0.0 0.5 1.0 1.5

0

2

4

6

VGS = 1.8 V

VGS = 3 V

VGS = 4.5 V

VGS = 1.5 V

VGS = 2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0246

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 2.5 V

VGS = 3 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 1.8 V

VGS = 1.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 3.4 A
V

GS

= 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

50

100

150

200

250

300

TJ = 125 oC

ID = 3.4 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOL TA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0.0 0.5 1.0 1.5 2.0

0

2

4

6

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor m a l i z e d On-Res i s t a n c e

vs Drain Current and Gate Voltage

®

MOSFET

Fi g u re 3. N o rmali z e d On- R e sist a n ce

vs Junction Temperature

FDME1024NZT Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

On- Resistance vs Gat e to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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FDME1024NZT Dual N-Channel PowerTrench

0123

0.0

1.5

3.0

4.5

ID = 3.4 A

VDD = 10 V

V

DD

= 8 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 12 V

0.1 1 10 20

10

100

500

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.1 1 10 50

0.01

0.1

1

10

1 s

100 μs

DC

100 ms

10 ms

1 ms

10 s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 195

o

C/W

T

A

= 25

o

C

0 3 6 9 12 15

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

V

GS

= 0 V

TJ = 25 oC

TJ = 125 oC

V

GS

,

GATE TO SOURCE VO LTAGE (V)

I

g

, GATE LEAKAGE CURRENT (A)

10

-4

10

-3

10

-2

10

-1

110

100 1000

1

10

100

P

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE
R

θJA

= 195 oC/W

T

A

= 25 oC

t, PULSE WIDTH (s)

0.5

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Forward Bias Safe Operating Area Figure 10.

Figure 11. Single Pulse Maximu

FDME1024NZT Rev.C1

Gate Leakage Current vs

Gate to Source Voltage

m Power Dissipation

4

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FDME1024NZT Dual N-Channel PowerTrench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.005

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 195 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

®

MOSFET

FDME1024NZT Rev.C1

5

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Dimensional Outline and Pad Layout

FDME1024NZT Dual N-Channel PowerTrench

®

MOSFET

FDME1024NZT Rev.C1

6

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FDME1024NZT Dual N-Channel PowerTrench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDME1024NZT Rev.C1 7

Datasheet contains the design specificatio ns for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fai r child
Semiconductor. The datashe et is for reference information only.

Rev. I48

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